2000 Fiscal Year Annual Research Report

量子限界近傍で動作するIII-V族量子細線トランジスタ論理・記憶集積回路の開発

Research Project

Project/Area Number	12555083
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	葛西誠也北海道大学, 大学院・工学研究科, 助手 (30312383) 江潮北海道大学, 量子界面エレクトロニクス研究センター, 非常勤研究員講師(研究機関研究員) 橋詰保北海道大学, 量子界面エレクトロニクス研究センター, 助教授 (80149898)
Keywords	量子細線トランジスタ / III-V族化合物半導体 / 量子限界 / 論理回路 / 記憶回路 / 集積回路 / ショットキーゲート / MBE選択成長
Research Abstract	本研究の目的は、独自のIII-V族半導体量子細線トランジスタ技術により、量子限界近傍で動作をする論理・記憶回路を実現し、量子集積回路に実用化の展望を切り開くことにある。平成12年度に得られた成果を以下に示す。 1.ショットキーインプレーンゲート(IPG)およびラップゲート(WPG)構造を適用したGaAs量子細線トランジスタについて、明確なコンダクタンスステップが得られるよう細線形状、ゲート長を最適化した。また、エッチング細線幅によりステップの急峻性およびしきい値の制御が可能であることを示した。 2.IPG量子細線トランジスタを、金属ナノドットのクローン荷電で制御する新しい単電子メモリデバイスを開発した。また、WPG単電子トランジスタ(SET)を用いた小規模集積回路として、量子細線トランジスタを負荷とする抵抗負荷インバータや、2つのSETを用いた相補形インバータを試作し、動作を実証した。ことに前者では伝達利得1.3が達成された。さらに、2分決定デバイス(BDD)アーキテクチャのノードスイッチの試作にも成功し、これを用いたOR回路を実現した。 3.原子状水素照射MBE選択成長により、均一性の極めて高いInGaAs埋め込みリッジ量子細線を実現した。光学的測定により、良好な結晶性を有することが確認された。さらに、大規模集積回路を実現するInGaAs量子細線ハニカム構造の形成およびその高密度化に成功した。 4.素子表面不活性化のために、III-V族半導体の表面準位を、走査トンネル分光(STS)法で調べた。表面準位帯電が異常コンダクタンスギャップを引き起こすことを初めて明らかにすると共に、ピンニングがエネルギー的・空間的に連続に分布する表面準位の集合体によることを示した。同時に、シリコン超薄膜界面制御層を用いた表面不活性化法を検討し、その有効性をSTSなどで確認した。

Research Products

(33 results)

All Other

All Publications (33 results)

[Publications] H.Hasegawa: "Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP"Applied Surface Science. 166. 92-96 (2000)
[Publications] H.Takahashi: "In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer"Applied Surface Science. 166. 526-531 (2000)
[Publications] H.Fujikura: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864-869 (2000)
[Publications] C.Jiang: "Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates"Physica E. 7. 902-906 (2000)
[Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. 53. 29-36 (2000)
[Publications] N.Negoro: "Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation"Applied Surface Science. 159/160. 292-300 (2000)
[Publications] S.Anantathanasarn: "Surface passivation of GaAs by ultra-thin cubic GaN layer"Applied Surface Science. 159/160. 456-461 (2000)
[Publications] T.Shiozawa: "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces"Applied Surface Science. 159/160. 98-103 (2000)
[Publications] H.Hasegawa: "MBE growth and applications of silicon interface control layers"Thin Solid Films. 367. 58-67 (2000)
[Publications] H.Hasegawa: "Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular bean epitaxy"Journal of Vacuum Science & Technology B. 18. 2100-2108 (2000)
[Publications] M.Iyawa: "Chemical and Electrochemical Nonofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal of Applied Physics. 39. 4651-4652 (2000)
[Publications] H.Fujikura: "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations"Japanese Journal of Applied Physics. 39. 4616-4620 (2000)
[Publications] Y.Yoshida: "Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen Terminated-Free Silicon Surfaces"Japanese Journal of Applied Physics. 39. 4504-4508 (2000)
[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Japanese Journal of Applied Physics. 39. 4609-4615 (2000)
[Publications] M.Yamade: "Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39. 2439-2443 (2000)
[Publications] S.Ootomo: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Japanese Journal of Applied Physics. 39. 2407-2413 (2000)
[Publications] T.Muranaka: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"Inst.Phys.Conf.Ser.. 166. 187-190 (2000)
[Publications] S.Kasai: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"Inst.Phys.Conf.Ser.. 166. 219-222 (2000)
[Publications] T.Muranaka: "Origin of Non-Uniformity in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-Assisted Cleaning"Thin Solid Films. 380. 189-191 (2000)
[Publications] B.Adamowicz: "Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers"Thin Solid Films. 367. 180-183 (2000)
[Publications] B.Adamowicz: "Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces"Vacuum. 57. 111-120 (2000)
[Publications] B.Adamowicz: "COMPUTER ANALYSIS OF THE FERMI LEVEL BEHAVIOR AT SiO_2/n-GaAs INTERFACES"Electron Technology. 33. 249-252 (2000)
[Publications] T.Yoshida: "Realization of UHV-CompativleDefect-Free Hydorogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. (in press). (2001)
[Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound, Semiconductors"Applied Surface Science. (in press). (2001)
[Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. (in press). (2001)
[Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40 (in press). (2001)
[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40 (in press). (2001)
[Publications] T.Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40 (in press). (2001)
[Publications] F.Ishikawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40 (in press). (2001)
[Publications] Z.Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40 (in press). (2001)
[Publications] C.Jiang: "Ridge Uniformity Improvement of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP"Japanese Journal of Applied Physics. 40 (in press). (2001)
[Publications] H.Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In Plane Gate Quantum Wire"Japanese Journal of Applied Physics. 40 (in press). (2001)
[Publications] 謝永桂: "InP 系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会誌C. (掲載決定). (2001)

2000 Fiscal Year Annual Research Report

量子限界近傍で動作するIII-V族量子細線トランジスタ論理・記憶集積回路の開発

Principal Investigator

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

Research Products

[Publications] H.Hasegawa: "Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP"Applied Surface Science. 166. 92-96 (2000)

[Publications] H.Takahashi: "In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer"Applied Surface Science. 166. 526-531 (2000)

[Publications] H.Fujikura: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864-869 (2000)

[Publications] C.Jiang: "Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates"Physica E. 7. 902-906 (2000)

[Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. 53. 29-36 (2000)

[Publications] N.Negoro: "Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation"Applied Surface Science. 159/160. 292-300 (2000)

[Publications] S.Anantathanasarn: "Surface passivation of GaAs by ultra-thin cubic GaN layer"Applied Surface Science. 159/160. 456-461 (2000)

[Publications] T.Shiozawa: "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces"Applied Surface Science. 159/160. 98-103 (2000)

[Publications] H.Hasegawa: "MBE growth and applications of silicon interface control layers"Thin Solid Films. 367. 58-67 (2000)

[Publications] H.Hasegawa: "Effects of gap states on scanning tunneling spectra observed on (110)- and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular bean epitaxy"Journal of Vacuum Science & Technology B. 18. 2100-2108 (2000)

[Publications] M.Iyawa: "Chemical and Electrochemical Nonofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal of Applied Physics. 39. 4651-4652 (2000)

[Publications] H.Fujikura: "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations"Japanese Journal of Applied Physics. 39. 4616-4620 (2000)

[Publications] Y.Yoshida: "Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen Terminated-Free Silicon Surfaces"Japanese Journal of Applied Physics. 39. 4504-4508 (2000)

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Japanese Journal of Applied Physics. 39. 4609-4615 (2000)

[Publications] M.Yamade: "Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39. 2439-2443 (2000)

[Publications] S.Ootomo: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Japanese Journal of Applied Physics. 39. 2407-2413 (2000)

[Publications] T.Muranaka: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"Inst.Phys.Conf.Ser.. 166. 187-190 (2000)

[Publications] S.Kasai: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"Inst.Phys.Conf.Ser.. 166. 219-222 (2000)

[Publications] T.Muranaka: "Origin of Non-Uniformity in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-Assisted Cleaning"Thin Solid Films. 380. 189-191 (2000)

[Publications] B.Adamowicz: "Analysis of photoluminescence efficiency and surface recombination velocity of MBE-grown AlGaAs layers"Thin Solid Films. 367. 180-183 (2000)

[Publications] B.Adamowicz: "Computer analysis of photon-induced non-equilibrium phenomena at Si and AlGaAs surfaces"Vacuum. 57. 111-120 (2000)

[Publications] B.Adamowicz: "COMPUTER ANALYSIS OF THE FERMI LEVEL BEHAVIOR AT SiO_2/n-GaAs INTERFACES"Electron Technology. 33. 249-252 (2000)

[Publications] T.Yoshida: "Realization of UHV-CompativleDefect-Free Hydorogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. (in press). (2001)

[Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound, Semiconductors"Applied Surface Science. (in press). (2001)

[Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. (in press). (2001)

[Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40 (in press). (2001)

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40 (in press). (2001)

[Publications] T.Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40 (in press). (2001)

[Publications] F.Ishikawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40 (in press). (2001)

[Publications] Z.Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40 (in press). (2001)

[Publications] C.Jiang: "Ridge Uniformity Improvement of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP"Japanese Journal of Applied Physics. 40 (in press). (2001)

[Publications] H.Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In Plane Gate Quantum Wire"Japanese Journal of Applied Physics. 40 (in press). (2001)

[Publications] 謝永桂: "InP 系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会誌C. (掲載決定). (2001)

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)