2001 Fiscal Year Final Research Report Summary
Twin Grain Thin Film Transistors
| Project/Area Number |
12555099
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
MACHIDA Shinya Tokyo Institute of Technology, Graduate School of Science and Engineering, Research Associate, 大学院・理工学研究科, 助手 (70313335)
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| Co-Investigator(Kenkyū-buntansha) |
MIMURA Akio Hitachi Research Laboratory, Researcher, 研究員
UCHIDA Yasutaka Teikyo University of Science and Technology, School of Science and Engineering, Associate Professor, 理工学部, 助教授 (80134823)
ODA Shunri Tokyo Institute of Technology, Research Center for Quantum Effect Electronics, Professor, 量子効果エレクトロニクス研究センター, 教授 (50126314)
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| Project Period (FY) |
2000 – 2001
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| Keywords | phase shift / excimer laser annealing / polycrystalline silicon / re-crystallization / thinfilm transistors / large grain size / silicon / oxide interface / silicon on glass |
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| Research Abstract |
A new sample structure has been proposed for position-controlled growth of giant Si grains by a phase-modulated excimer-laser annealing method. The sample consists of a layered structure with an organic silica underlayer at the bottom for reducing the heat removal rate from the Si layer placed on it, and a thick silica capping-layer on the top, for enlarging the amount of excess stored heat. These layers effectively elongated the grain growth time, resulting in the long lateral grain growth to 24 μm. In addition, a sample having a buried silica island array in the Si layer has also been proposed for achieving two-dimensional position control, where the island determines the starting position of the lateral grain growth. By combining these technologies, we have grown single crystals of Si grains as large as 12 μm at pre-designated positions by single-shot irradiation.
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