2001 Fiscal Year Final Research Report Summary
Development of Semiconductor Detectors for Simultaneous Observations of Spatially Resolved Ion and Electron Temperatures and Beams
| Project/Area Number |
12558048
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 展開研究 |
|---|
| Research Field |
Nuclear fusion studies
|
|---|
| Research Institution | University of Tsukuba |
|---|
Principal Investigator |
CHO Teruji Univ. Tsukuba, Institute of Physics, Professor, 物理学系, 教授 (80171958)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
NAKASHIMA Yousuke Univ. Tsukuba, Plasma Research Centre/Insti. Physics, Associate Prof., プラズマ研究センター, 助教授 (00188939)
KONDOH Mafumi (HIRATA Mafumi) Univ. Tsukuba, Plasma Research Centre/Insti. Physics, Assistant Prof., プラズマ研究センター, 講師 (70222247)
KOHAGURA Junko Univ. Tsukuba, Plasma Research Centre/Insti. Physics, Research Associate, プラズマ研究センター, 講師 (60302345)
KAEZAWA Hideki Photon Factory, KEK, Professor, 放射光実験施設, 教授 (40150015)
YOSHIKAWA Masashi Univ. Tsukeba, Plasma Research Centre/Insti. Physics, Assistant Prof., 物理学系, 講師 (00272138)
|
|---|
| Project Period (FY) |
2000 – 2001
|
| Keywords | Ion Temperature Diagnostics / Electron Temperature Diagnostics / Simultaneous Observations of Ion and Electron Temperatures / Semiconductor Detectors / Charge Exchange Neutral Particle Diagnostics / X-ray Diagnostics / X-rays from Plasmas / Plasma Diagnostics |
|---|
| Research Abstract |
An idea of the use of semiconductor detectors for simultaneously observing both plasmaion (Ti) and electron (Te) temperatures is proposed. The idea is also experimentally verified in a tandem-mirror plasma shot. This method is developed on the basis of an alternative "positive" use of a semiconductor "dead layer" as an energy-analysis filter. Filtering dependence of charge exchange neutral particles from plasmas on the thickness of a thin (of the order of nm thick) SiO2 layer is employed for analyzing Ti in the range from hundreds to thousands eV. Even under the conditions of simultaneous incidence of such particles and x rays into semiconductor detectors, the different dependence on their penetration lengths and deposition depths in semiconductor materials makes it possible to distinguish particles (for Ti) from x rays (for Te). In this research, proof-of-principle plasma experiments for the proposed idea are carried out to verify the availability of this concept of distinguishing and identifying each value of Ti and Te by the use of various thin filtering materials prior to the use of thinner dead layers.
|
