2001 Fiscal Year Annual Research Report

量子コンピューティング実現に向けた化合物半導体基本量子論理ゲートの開発

Research Project

Project/Area Number	12750286
Research Institution	Hokkaido University
Principal Investigator	葛西誠也北海道大学, 大学院・工学研究科, 助教授 (30312383)
Keywords	量子コンピューティング / 化合物半導体 / 量子デバイス / 単電子デバイス / 論理回路 / 二分決定グラフ / 単電子インバータ / 結合量子細線
Research Abstract	本研究の目的は、化合物半導体を用いた量子論理ゲートの要素技術開発および基本ゲートの試作・評価である。平成13年度の研究成果は、次の通りである。 1.より現実的な量子論理アーキテクチャとして、二分決定グラフ(BDD)を取り上げ、これを化合物半導体量子細線六角形ネットワーク構造とナノショットキーゲートにより実装する手法を考案した。 2.上記量子BDD回路の基本素子となる量子節点デバイスを試作し、その基本スイッチング動作を、量子輸送モードおよび古典電流輸送モードにおいて確認した。また、量子BDD基本論理回路(OR,AND,排他的論理和)や半加算器を試作し、正しい論理演算を実行することを示した。さらに、本回路が、極低温から室温まで演算可能であること、および、電力・遅延積がSi CMOS論理ゲートのそれより一桁以上低くなることを示した。 3.量子細線形および単電子形2ビット全加算器の試作を行い、14個の量子節点デバイスを集積化するとともに、集積度10^7cm^<-2>を達成した。 4.量子論理ゲートの基本構造となる量子ナノ細線を、電子閉じこめが強いAlGaN/GaNヘテロ構造をドライエッチングにより形成する手法を検討し、加工細線幅110nmのエッチングナノ細線の形成を可能にした。 5.デバイス設計のために、ナノショットキーゲート特性に関し解析を進め、ナノサイズショットキーゲートでは、ポテンシャル制御性がゲートサイズに強く依存し、ゲート周辺の表面フェルミ準位ピンニングの影響を強く受けることを理論的・実験的に明らかにし、および、表面準位の過充放電による実効的なゲート長の変動について実験と理論の比較により指摘した。

Research Products
(16 results)

All Other

All Publications (16 results)

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)
[Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)
[Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)
[Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown(001)Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)
[Publications] Y.-G.Xie: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C10. 1335-1343 (2001)
[Publications] T.Yamada: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. 40. 4485-4488 (2001)
[Publications] Y.G.Xie: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC-and RF-Performance"IEEE Electron Device Letter. 22. 312-314 (2001)
[Publications] H.Hasegawa: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires"Physica E. 11. 149-154 (2001)
[Publications] S.Kasai: "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture"Physica E. (in press). (2002)
[Publications] M.Yumoto: "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates"Microelectronics Engineering. (in press). (2002)
[Publications] M.Yumoto: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal of Applied Physics. (in press). (2002)
[Publications] M.Endo: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal of Applied Physics. (in press). (2002)
[Publications] S.Kasai: "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks"Applied Surface Science. (in press). (2002)
[Publications] M.Yumoto: "Gate Control Characteristics in GaAs Nanometer-Scale Schottky Wrap Gate Structure"Applied Surface Science. (in press). (2002)
[Publications] A.Kameda: "Effects of Surface States on Control Characteristics of Nanometer Scale Schottky Gates Formed on GaAs"Solid-State Electronics. (in press). (2002)
[Publications] S.Kasai: "Fabrication of GaAs-based Integrated HaIf and FuIl Adders by Novel Hexagonal BDD Quantum Circuit Approach"Solid-State Electronics. (in press). (2002)

2001 Fiscal Year Annual Research Report

量子コンピューティング実現に向けた化合物半導体基本量子論理ゲートの開発

Principal Investigator

葛西 誠也 北海道大学, 大学院・工学研究科, 助教授 (30312383)

Research Products

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)

[Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)

[Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)

[Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown(001)Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)

[Publications] Y.-G.Xie: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C10. 1335-1343 (2001)

[Publications] T.Yamada: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. 40. 4485-4488 (2001)

[Publications] Y.G.Xie: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC-and RF-Performance"IEEE Electron Device Letter. 22. 312-314 (2001)

[Publications] H.Hasegawa: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires"Physica E. 11. 149-154 (2001)

[Publications] S.Kasai: "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture"Physica E. (in press). (2002)

[Publications] M.Yumoto: "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates"Microelectronics Engineering. (in press). (2002)

[Publications] M.Yumoto: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal of Applied Physics. (in press). (2002)

[Publications] M.Endo: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal of Applied Physics. (in press). (2002)

[Publications] S.Kasai: "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks"Applied Surface Science. (in press). (2002)

[Publications] M.Yumoto: "Gate Control Characteristics in GaAs Nanometer-Scale Schottky Wrap Gate Structure"Applied Surface Science. (in press). (2002)

[Publications] A.Kameda: "Effects of Surface States on Control Characteristics of Nanometer Scale Schottky Gates Formed on GaAs"Solid-State Electronics. (in press). (2002)

[Publications] S.Kasai: "Fabrication of GaAs-based Integrated HaIf and FuIl Adders by Novel Hexagonal BDD Quantum Circuit Approach"Solid-State Electronics. (in press). (2002)

葛西誠也北海道大学, 大学院・工学研究科, 助教授 (30312383)