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2001 Fiscal Year Final Research Report Summary

Study for low-temperature formation of high-quality STNO high-k films for non-volatile memories

Research Project

Project/Area Number 12838001
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 複合化集積システム
Research InstitutionTohoku University

Principal Investigator

HIRAYAMA Masaki  Tohoku University, Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 (70250701)

Co-Investigator(Kenkyū-buntansha) OHMI Tadahiro  Tohoku University, New Industry Creation Hatchery Center, Professor, 未来科学技術共同研究センター, 教授 (20016463)
Project Period (FY) 2000 – 2001
Keywordshigh-k film / STNO / non volatile memory / silicon nitride / direct nitridation / direct oxidation / microwave plasma / radial line slot antenna
Research Abstract

The purpose of this research project is to develop film formation process technologies for high-quality high-k films (Sr_2(Ta_<1-x>, Nb_x)_2O_7 : STNO) with excellent uniformity within ±2 % over large diameter wafers at very low-temperatures below 500 ℃ by utilizing a microwave excited high-density plasma with a radial line slot antenna.
By using the conventional high-k film formation methods such as sol-gel, PE-CVD (plasma enhanced chemical vapor deposition), CVD, and sputtering, it is difficult to form uniform high-quality gate insulator with high-rate at low-temperatures. In this research project we have developed following novel high-k gate insulator formation technologies. The process sequence is as follows. At first, a high-quality ultra-thin silicon nitride film as a barrier film is formed on a silicon substrate at low temperature of 500 ℃ by utilizing the microwave excited high-density plasma to mitigate the reaction between the high-k film and the silicon substrate. Then a Sr, … More Ta, Nb alloy film are formed on the substrate by using a novel sputtering technology with balanced electron drift magnetron plasma utilizing low-energy ion bombardment. Then, high-k film is formed by direct oxidation in the microwave excited high-density plasma equipment.
We have succeeded to form high-quality silicon nitride gate insulator films with excellent barrier ability, very low leakage current (3 order of magnitude lower than the conventional thermally grown gate oxide films), very low 1/f noise (2 order of magnitude lower than the conventional gate oxide films), and excellent strength for current stress (Qbd : 100 C/cm^2) by low-temperature direct-nitridation process with NH^* radicals. Furthermore, we have succeeded to form oxide films with excellent electric properties by directly oxidizing the single-crystal silicon with every surface orientation, poly silicon, and metal involving the Sr, Ta, Nb alloys. These results lead not only to the realization of ultrahigh-speed devices with high-k gate FET but also to the establishment of a number of advanced processing technologies which certainly will become the main stream in microelectronics in sub- 100 nm era, impacting greatly the semiconductor manufacturing technology in future. Less

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] Katsuyuki Sekine: "Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature by Microwave -Excitation High-Density Plasma for Giga Scale Integration"IEEE Trans. on Electron Devices. 47・7. 1370-1374 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Ryu Kaihara: "Damage-free Contact Etching using Balanced Electron Drift Magnetron Etcher"The Ninth International Symposium on Semiconductor Manufacturing 2000. 102-105 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yuji Saito: "Advantage of Radical Oxidation for Improving Reliability of Ultra-Thin Gate Oxide"2000 Symposium on VLSI Technology. 176-177 (2000)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Katsuyuki Sekine: "Highly Reliable Ultrathin Silicon Oxide Film Formation at Low Temperature by Oxygen Radical Generated in High-Density Krypton Plasma"IEEE TRANSACTION ON Electron Devices. 48・8. 1550-1555 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tadahiro Ohmi: "New Paradigm of Silicon Technology"Proceedings of The IEEE. 89・3. 130-155 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Tatsufumi Hamada: "Thin Inter-Polyoxide Films for Flash Memories Grown at Low Temperature(400℃)by Oxygen Radicals"IEEE Electron Device Letters. 22・9. 423-425 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Katsuyuki Sekine: "Highly Robust Ultrathin Silicon Nitride Films Grown at Low-Temperature by Microwave-Excitation High-Density Plasma for Giga Scale Integration"IEEE Trans. on Electron Devices. Vol. 47, No. 7. 1370-1374 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Ryu Kaihara: "Damage-free Contact Etching using Balanced Electron Drift Magnetron Etcher"The Ninth International Symposium on Semiconductor Manufacturing 2000. 102-105 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yuji Saito: "Advantage of Radical Oxidation for Improving Reliability of Ultra-Thin Gate Oxide"2000 Symposium on VLSI Technology. 176-177 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Katsuyuki Sekine: "Highly Reliable Ultrathin Silicon Oxide Film Formation at Low Temperature by Oxygen Radical Generated in High-Density Krypton Plasma"IEEE TRANSACTION ON Electron Devices. Vol. 48, No. 8. 1550-1555 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Tadahiro Ohmi: "New Paradigm of Silicon Technology"Proceedings of The IEEE. Vol. 89, No. 3. 133-155 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Tatsufumi Hamada: "Thin Inter-Polyoxide Films for Flash Memories Grown at Low Temperature (400 ℃) by Oxygen Radicals"IEEE Electron Device Letters. Vol. 22, No. 9. 423-425 (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2003-09-17  

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