2001 Fiscal Year Annual Research Report

ナノショットキーゲート制御量子ドットによるBDDアーキテクチャ単電子集積回路

Research Project

Project/Area Number	13305020
Research Institution	Hokkaido University
Principal Investigator	長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)
Co-Investigator(Kenkyū-buntansha)	赤澤正道北海道大学, 量子集積エレクトロニクス研究センター, 助教授 (30212400) 橋詰保北海道大学, 量子集積エレクトロニクス研究センター, 助教授 (80149898) 雨宮好仁北海道大学, 大学院・工学研究科, 教授 (80250489) 葛西誠也北海道大学, 大学院・工学研究科, 助教授 (30312383)
Keywords	単電子回路 / 二分決定グラフ(BDD) / ヘキサゴナルBDD量子回路 / 量子ドット / ショットキーゲート / 量子細線ネットワーク / 電力・遅延積 / 量子輸送
Research Abstract	本研究は、独自の2分決定グラフ(Binary Decision Diagram = BDD)論理アーキテクチャをもつ集積回路を、独自のナノショットキーゲートで量子ドットを形成・制御する半導体単電子BDDノードデバイスを用いて実現することを目的とする。平成13年度に得られた成果を以下に示す。 1.BDDをヘキサゴナルナノ細線ネットワーク構造を用いて超高密度に実装する新しい量子論理回路方式「ヘキサゴナルBDD量子回路方式」を提案した。 2.GaAsエッチングナノ細線ネットワークをショットキーラップゲート(WPG)で制御することによりヘキサゴナルBDD量子回路の基本デバイスである量子節点デバイスを試作し、室温および低温において明確なパススイッチング動作を実現した。 3.WPG量子節点デバイスを集積化し、ANDや排他的論理和などのBDD基本論理回路を実現した。これらにより、半加算器を構成しその動作を実証した。 4.ヘキサゴナルGaAsナノ細線ネットワークとWPGを用いたヘキサゴナルBDD2ビット加算器の試作に成功した。ナノ細線を交差させることなく節点デバイスを14個集積化し、節点デバイス密度にして10^7cm^<-2>の集積度を達成した。 5.均一性や制御性が高いGaAsおよびInGaAs埋め込みリッジ量子細線アレイを実現した。さらに、ヘキサゴナルBDD量子回路の室温動作および大規模集積化を可能にするInGaAs量子細線ヘキサゴナルネットワーク構造の形成およびBDDデバイス密度にして10^8cm^<-2>相当の高密度化に成功した。 6.超薄膜シリコン層によるGaAs素子表面不活性化技術について検討を行った。シリコン層形成前の初期表面としてGaリッチな(4x6)再構成表面を採用することにより、高い表面不活性化効果が得られることを明らかにした。表面準位密度の最小値は7.4x10^<10>cm^<-2>eV^<-1>であり、表面準位密度分布はバンド端で急増することなく、ほぼフラットな分布が実現された。

Research Products
(47 results)

All Other

All Publications (47 results)

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)
[Publications] H.Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors"Japanese Journal of Applied Physics. 40. 2797-2800 (2001)
[Publications] T.Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40. 1874-1877 (2001)
[Publications] F.Ishikawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40. 2769-2774 (2001)
[Publications] Z.Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40. 2757-2761 (2001)
[Publications] C.Jiang: "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. 40. 3003-3008 (2001)
[Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)
[Publications] M.Miczek: "Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum"Vacuum. 63. 223-227 (2001)
[Publications] T.Yoshida: "Realization of UHV-Compativle Defect-Free Hydrogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. 175/176. 163-168 (2001)
[Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)
[Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)
[Publications] Y.-G.Xie: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C10. 1335-1343 (2001)
[Publications] H.Takahashi: "Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer"IEICE-C. E84-C10. 1344-1349 (2001)
[Publications] T.Hashizume: "Surface passivation process for GaN-based electronic devices utilizing ECR-CVD SiN_x film"IEICE-C. E84-C10. 1455-1461 (2001)
[Publications] 謝永桂: "InP系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会論文誌C. J84-C. 872-882 (2001)
[Publications] T.Yamada: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. 40. 4485-4488 (2001)
[Publications] Y.G.Xie: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC- and RF-Performance"IEEE Electron Device Letter. 22. 312-314 (2001)
[Publications] S.Anantathanasarn: "Surface passivation of GaAs using an ultrathin cubic GaN interface control layer"Journal of Vacuum Science & Technology B. 19. 1589-1596 (2001)
[Publications] T.Hashizume: "Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostuctures"Journal of Vacuum Science & Technology B. 19. 1675-1681 (2001)
[Publications] H.Hasegawa: "Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique"Materials Science & Engineering. B80. 147-151 (2001)
[Publications] T.Hashizume: "Surface characterization of GaN and AlGaN layers grown by MOVPE"Materials Science & Engineering. B80. 309-312 (2001)
[Publications] H.Hasegawa: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires"Physica E. 11. 149-154 (2001)
[Publications] S.Ootomo: "Surface passivation of AlGaN/GaN heterostructures using and ultrathin Al2O3 layer"Physica Status Solidi A-Applied Research. 188. 371-374 (2001)
[Publications] H.Hasegawa: "Formation and Quantum Devices Applications of III-V Compound Semiconductor Nanostructures"Journal of the Korean Physical Society. 39. S402-S409 (2001)
[Publications] M.Konishi: "In-situ XPS and Photoluminescence Characterization of GaN Surfaces Grown by MBE on MOVPE GaN Templates"Institute of Physics Conference Series. (in press). (2002)
[Publications] T.Sato: "Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs (001) Substrates and Its Application to Hexagonal Nanowire Network Formation"Institute of Physics Conference Series. (in press). (2002)
[Publications] F.Ishikawa: "Self-consistent Computer Analysis of Cathodoluminescence In-Depth Spectra for Compound Semiconductor Heterostructures"Institute of Physics Conference Series. (in press). (2002)
[Publications] S.Kasai: "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture"Physica E. (in press). (2002)
[Publications] T.Muranaka: "Control of Morphology and Wire Width in InGaAs Ridge Quantum Wires Grown by Atomic Hydrogen-Assisted Selective Molecular Beam Epitaxy"Physica E. (in press). (2002)
[Publications] M.Yumoto: "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates"Microelectronics Engineering. (in press). (2002)
[Publications] C.Jiang: "MBE Growth Mechanism and Wire Width Control for Formation of Dense Networks of Narrow InGaAs Quantum Wires"Microelectronics Engineering. (in press). (2002)
[Publications] T.Hirano: "Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of lnGaAs Quantum Wires and Dots"Japanese Journal of Applied Physics. (in press). (2002)
[Publications] Z.Fu: "Optimization of Novel Oxide-Free Insulated Gate Structure for InP Having An Ultrathin Silicon Interface Control Layer"Japanese Journal of Applied Physics. (in press). (2002)
[Publications] C.Jiang: "Realization of Submicron-Pitch Linear Arrays of Nanometer-Sized InGaAs Ridge Quantum Wires by Selective MBE Growth on Patterned InP Substrates"Japanese Journal of Applied Physics. (in press). (2002)
[Publications] M.Yumoto: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal of Applied Physics. (in press). (2002)
[Publications] C.Jiang: "Structural and Optical Properties of 10 nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. (in press). (2002)
[Publications] M.Endo: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal of Applied Physics. (in press). (2002)
[Publications] Y.Nakano: "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction"Japanese Journal of Applied Physics. (in press). (2002)
[Publications] S.Kasai: "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks"Applied Surface Science. (in press). (2002)
[Publications] A.Ito: "Formation of High-Density Hexagonal Networks of InGaAs Ridge Quantum Wires by Atomic Hydrogen Assisted Selective Molecular Beam Epitaxy"Applied Surface Science. (in press). (2002)
[Publications] M.Yumoto: "Gate Control Characteristics in GaAs Nanometer-Scale Schottky Wrap Gate Structure"Applied Surface Science. (in press). (2002)
[Publications] N.Negoro: "Scanned-Probe Topological and Spectroscopic Study of Surface States on Clean and Si-Deposited GaAs (001)-c(4x4) surfaces"Applied Surface Science. (in press). (2002)
[Publications] F.Ishikawa: "Depth Resolved Cathodluminescence Characterization of Buried InGaP/GaAs Heterointerfaces"Applied Surface Science. (in press). (2002)
[Publications] S.Anantathanasarn: "Photoluminescence and Capacitance-Voltage Characterization of GaAs Surface Passivated by an Ultrathin GaN Interface Control Layer"Applied Surface Science. (in press). (2002)
[Publications] Z.Fu: "Gated Photoluminescence Study of Oxide-Free InP MIS Structure Having an Ultrathin Silicon Interface Control Layer"Applied Surface Science. (in press). (2002)
[Publications] Z.Jin: "Effects of Nitrogen Addition on Methane-Based ECR Plasma Etching of GaN and Related Materials"Applied Surface Science. (in press). (2002)
[Publications] S.Oyama: "Mechanism of Current Leakage through Metal/n-GaN Interfaces"Applied Surface Science. (in press). (2002)

2001 Fiscal Year Annual Research Report

ナノショットキーゲート制御量子ドットによるBDDアーキテクチャ単電子集積回路

Principal Investigator

長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)

Research Products

[Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)

[Publications] H.Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors"Japanese Journal of Applied Physics. 40. 2797-2800 (2001)

[Publications] T.Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40. 1874-1877 (2001)

[Publications] F.Ishikawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40. 2769-2774 (2001)

[Publications] Z.Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40. 2757-2761 (2001)

[Publications] C.Jiang: "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. 40. 3003-3008 (2001)

[Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)

[Publications] M.Miczek: "Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum"Vacuum. 63. 223-227 (2001)

[Publications] T.Yoshida: "Realization of UHV-Compativle Defect-Free Hydrogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. 175/176. 163-168 (2001)

[Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)

[Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)

[Publications] Y.-G.Xie: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C10. 1335-1343 (2001)

[Publications] H.Takahashi: "Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer"IEICE-C. E84-C10. 1344-1349 (2001)

[Publications] T.Hashizume: "Surface passivation process for GaN-based electronic devices utilizing ECR-CVD SiN_x film"IEICE-C. E84-C10. 1455-1461 (2001)

[Publications] 謝永桂: "InP系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会論文誌C. J84-C. 872-882 (2001)

[Publications] T.Yamada: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. 40. 4485-4488 (2001)

[Publications] Y.G.Xie: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC- and RF-Performance"IEEE Electron Device Letter. 22. 312-314 (2001)

[Publications] S.Anantathanasarn: "Surface passivation of GaAs using an ultrathin cubic GaN interface control layer"Journal of Vacuum Science & Technology B. 19. 1589-1596 (2001)

[Publications] T.Hashizume: "Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostuctures"Journal of Vacuum Science & Technology B. 19. 1675-1681 (2001)

[Publications] H.Hasegawa: "Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique"Materials Science & Engineering. B80. 147-151 (2001)

[Publications] T.Hashizume: "Surface characterization of GaN and AlGaN layers grown by MOVPE"Materials Science & Engineering. B80. 309-312 (2001)

[Publications] H.Hasegawa: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires"Physica E. 11. 149-154 (2001)

[Publications] S.Ootomo: "Surface passivation of AlGaN/GaN heterostructures using and ultrathin Al2O3 layer"Physica Status Solidi A-Applied Research. 188. 371-374 (2001)

[Publications] H.Hasegawa: "Formation and Quantum Devices Applications of III-V Compound Semiconductor Nanostructures"Journal of the Korean Physical Society. 39. S402-S409 (2001)

[Publications] M.Konishi: "In-situ XPS and Photoluminescence Characterization of GaN Surfaces Grown by MBE on MOVPE GaN Templates"Institute of Physics Conference Series. (in press). (2002)

[Publications] T.Sato: "Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs (001) Substrates and Its Application to Hexagonal Nanowire Network Formation"Institute of Physics Conference Series. (in press). (2002)

[Publications] F.Ishikawa: "Self-consistent Computer Analysis of Cathodoluminescence In-Depth Spectra for Compound Semiconductor Heterostructures"Institute of Physics Conference Series. (in press). (2002)

[Publications] S.Kasai: "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture"Physica E. (in press). (2002)

[Publications] T.Muranaka: "Control of Morphology and Wire Width in InGaAs Ridge Quantum Wires Grown by Atomic Hydrogen-Assisted Selective Molecular Beam Epitaxy"Physica E. (in press). (2002)

[Publications] M.Yumoto: "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates"Microelectronics Engineering. (in press). (2002)

[Publications] C.Jiang: "MBE Growth Mechanism and Wire Width Control for Formation of Dense Networks of Narrow InGaAs Quantum Wires"Microelectronics Engineering. (in press). (2002)

[Publications] T.Hirano: "Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of lnGaAs Quantum Wires and Dots"Japanese Journal of Applied Physics. (in press). (2002)

[Publications] Z.Fu: "Optimization of Novel Oxide-Free Insulated Gate Structure for InP Having An Ultrathin Silicon Interface Control Layer"Japanese Journal of Applied Physics. (in press). (2002)

[Publications] C.Jiang: "Realization of Submicron-Pitch Linear Arrays of Nanometer-Sized InGaAs Ridge Quantum Wires by Selective MBE Growth on Patterned InP Substrates"Japanese Journal of Applied Physics. (in press). (2002)

[Publications] M.Yumoto: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal of Applied Physics. (in press). (2002)

[Publications] C.Jiang: "Structural and Optical Properties of 10 nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. (in press). (2002)

[Publications] M.Endo: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal of Applied Physics. (in press). (2002)

[Publications] Y.Nakano: "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction"Japanese Journal of Applied Physics. (in press). (2002)

[Publications] S.Kasai: "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks"Applied Surface Science. (in press). (2002)

[Publications] A.Ito: "Formation of High-Density Hexagonal Networks of InGaAs Ridge Quantum Wires by Atomic Hydrogen Assisted Selective Molecular Beam Epitaxy"Applied Surface Science. (in press). (2002)

[Publications] M.Yumoto: "Gate Control Characteristics in GaAs Nanometer-Scale Schottky Wrap Gate Structure"Applied Surface Science. (in press). (2002)

[Publications] N.Negoro: "Scanned-Probe Topological and Spectroscopic Study of Surface States on Clean and Si-Deposited GaAs (001)-c(4x4) surfaces"Applied Surface Science. (in press). (2002)

[Publications] F.Ishikawa: "Depth Resolved Cathodluminescence Characterization of Buried InGaP/GaAs Heterointerfaces"Applied Surface Science. (in press). (2002)

[Publications] S.Anantathanasarn: "Photoluminescence and Capacitance-Voltage Characterization of GaAs Surface Passivated by an Ultrathin GaN Interface Control Layer"Applied Surface Science. (in press). (2002)

[Publications] Z.Fu: "Gated Photoluminescence Study of Oxide-Free InP MIS Structure Having an Ultrathin Silicon Interface Control Layer"Applied Surface Science. (in press). (2002)

[Publications] Z.Jin: "Effects of Nitrogen Addition on Methane-Based ECR Plasma Etching of GaN and Related Materials"Applied Surface Science. (in press). (2002)

[Publications] S.Oyama: "Mechanism of Current Leakage through Metal/n-GaN Interfaces"Applied Surface Science. (in press). (2002)

長谷川英機北海道大学, 大学院・工学研究科, 教授 (60001781)