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2003 Fiscal Year Final Research Report Summary

Fabrication of Semiconductor Light Amplifier using Ultra-High Co-Doping of Er and O

Research Project

Project/Area Number 13305022
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionNagoya University

Principal Investigator

TAKEDA Yoshikazu  Nagoya University, Dept.of Materials Science and Engineering, Professor, 工学研究科, 教授 (20111932)

Co-Investigator(Kenkyū-buntansha) NONOGAKI Youichi  Institute for Molecular Science, Okazaki National Research Institutes, Research Associate, 分子科学研究所, 助手 (40300719)
TABUCHI Masao  Nagoya University, Dept.of Materials Science and Engineering, Associate Professor, 工学研究科, 助教授 (90222124)
FUJIWARA Yasufumi  Nagoya University, Dept.of Materials Science and Engineering, Associate Professor, 工学研究科, 助教授 (10181421)
Project Period (FY) 2001 – 2003
KeywordsRare-Earth Elements / Co-doping / Semiconductors / Light Amplifier / Ultra-high Doping
Research Abstract

1. In the device structure of GaInP/(GaAs:Er,O)/GaInP it was found that unintentional interface layer is formed and this layer emits unnecessary light. This layer was found to affect the crystal quality of the layers grown on top of the interface layer.
2. This unintentional interface layer was found by the X-ray ORT scattering analysis due to the distribution of In into the GaAs layer grown on top of the GaInP layer.
3. The unintentional interface layer was suppressed to grow by using a relatively lower temperature (540℃) that is the best growth temperature for the effective light emission from the Er-20 center.
4. We successfully obtained the 1.55μm emission from the p-n junction devices fabricated using the above growth conditions. This emission from the p-n junction is the first observation in the world.
5. From the pulse response of the emission, the excitation cross-section for this emission was obtained as 2x10^<-15>cm^<-2>. This value is by two orders of magnitude larger than that in Si.
6. The cross-section was found dependent on the active layer thickness the thicker the smaller.
7. This abnormal dependence was found due to the very short diffusion lengths of the injected electrons and holes.

  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] A.Koizumi et al.: "Room-temperature electroluminescence properties of Er, O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy"Applied Physics Letters. 83巻・22号. 4521-4523 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Koizumi et al.: "Room-temperature 1.54μm light emission from Er, O-codoped GaAs/GaInP light-emitting diodes grown by low-pressure organometallic vapor phase epitaxy"Japanese Journal of Applied Physics. 42巻・4B号. 2223-2225 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 田渕雅夫, 他: "InP/GaInAs/InPおよびGaAs/GaInP/GaAsヘテロ界面の原子レベル構造と成長条件依存性"信学技報TECHNICAL REPORT OF IEICE. CPM2003-63号. 13-18 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 竹田美和: "不純物XAFS-特定原子の周辺構造を見る-"応用物理学会結晶工学分科会第8回結晶工学セミナー. 10月21日号. 29-35 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Koizumi et al.: "Effects of active layer thickness on Er excitation cross section in GaInP/GaAs : Er, O/GaInP double heterostructure light-emitting diodes"Physics B. 340-4342巻. 309-314 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Takeda: "Effects of growth process on GaInP/GaAs/GaInP heterointerface structures and device characteristics revealed by X-ray CTR scattering measurements"Transactions of the Materials Research Society of Japan. 28巻. 11-14 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 竹田美和(分担執筆): "エピタキシャル成長のメカニズム"共立出版. 210 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Fujiwara, T.Koide, S.Jinno, Y.Isogai, Y.Takeda: "Luminescence properties of Dy-doped GaAs grown by organometallic vapor phase epitaxy"Physica B. Vols.308-310. 796-799 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Koizumi, N.Watanabe, T.Koide, Y.Fujiwara, Y.Takeda: "Luminescence properties of Er,O-codoped GaAs/GaInP double heterostructures grown by organometallic vapor phase epitaxy"Physica B. Vols.308-310. 891-894 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Koizumi, Y.Fujiwara, K.Inoue, A.Urakami, T.Yoshikane, Y.Takeda: "Room-temperature 1.54μm light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy"Japanese Journal of Applied Physics. Vol.42, (4B). 2223-2225 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Koizumi, Y.Fujiwara, A.Urakami, K.Inoue, T.Yoshikane, Y.Takeda: "Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy"Applied Physics Letters. Vol.83. 4521-4523 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Takeda: "Effects of Growth Process on GaInP/GaAs/GaInP Heterointerface Structures and Device Characteristics Revealed by X-ray CTR Scattering Measurements"Transactions of Materials Research Society of Japan. Vol.28. 11-14 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Koizumi, Y.Fujiwara, A.Urakami, K.Inoue, T.Yoshikane, Y.Takeda: "Effects of active layer thickness on Er excitation cross section in GaInP/GaAs:Er,O/GaInP double heterostructure"Physica B. Vols.340-342. 309-314 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Koizumi, Y.Fujiwara, A.Urakami, K.Inoue, T.Yoshikane, Y.Takeda: "Room temperature 1.5μm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase exitaxy"Materials Science and Engineering B. Vol.105. 57-60 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Tabuchi, S.Hisadome, D.Katou, T.Yoshikane, A.Urakami, K.Inoue, A.Koizumi, Y Fujiwara, Y.Takeda: "Interface Structures of OMVPE-Grown GaAs/GaInP/GaAs Studied by X-ray CTR Scattering Measurement"IPRM2003. (in press).

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2005-04-19  

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