2003 Fiscal Year Final Research Report Summary
Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
| Project/Area Number |
13355001
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | RIKEN (2003)
Tokyo Institute of Technology (2001-2002) |
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Principal Investigator |
HIRAYAMA Hideki RIKEN, Advanced Devices laboratory, Senior Research Scientist, 石橋極微デバイス工学研究室, 先任研究員 (70270593)
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| Co-Investigator(Kenkyū-buntansha) |
KAWASAKI Koji Tokyo Inst, Tech., Assistant, 大学院・総合理工学研究科, 助手 (10234056)
YOSHIDA Hiroshi Osaka Univ., Professor, 産業科学研究所, 教授 (30133929)
DEN Akiharu Katagiri Engeneering Ltd, Head Director, 技術部長
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| Project Period (FY) |
2001 – 2003
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| Keywords | Deep UV-LED / Wide bandgap / MOCVD / Alternating supply method / Mg-doping / Co-doping / Hall-effect measurement |
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| Research Abstract |
The demands for high-intensity ultraviolet (UV) laser diodes (LDs) and light-emitting diodes (LEDs) are increasing for the application of high-efficiency lighting, biochemical and medical fields or high-density optical storages. GaN and III-nitride compound semiconductors are attracting considerable attention as candidate materials for the realization of UV-LDs and LEDs. However, it is difficult to achieve high-efficiency deep UV-LEDs or LDs using nitride-based materials because of the difficulty in obtaining High-Al-content p-type AlGaN. The purpose of this work is to achieve high-hole-density for wide-bandgap p-type AlGaN using an alternating co-doping technique, and to develop high-efficiency deep UV LEDs or LDs operating in the wavelength between 250-350 nm.
First, we have demonstrated high-hole-density for Si/Mg co-doped GaN epitaxial filmes fabricating using alternating gas supply method. We obtained significant increase of hole density by introducing Si-doping concentration in Mg-doped GaN. Then, we fabricated high-Al-content Mg-doped AlGaN using alternating gas supply method. We obtained hole-conductivity for extremely high Al content (46-53%) Mg-doped AlGaN by using the alternating gas supply method. We have also observed the reduction of activation energy by introducing Si/Mg co-doping into AlGaN. We fabricated 310 nm-band InAlGaN-based deep UV light-emitting diodes (LEDs) with high-Al-content (53%) p-type AlGaN grown with the alternating gas supple method. We have achieved sub-milliwatt output power under RT pulsed operation in the wavelength between 308-314 nm.
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Research Products
(80 results)
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[Journal Article] Surprisingly low built-in electric fields in quaternary AlInGar heterostructures2004
Author(s)
S.Anceau, P.Lefebvre, T.Suski, S.P.Lepkowski, H.Teisseyre, L.H.Dmowski, L.Konczewicz, A.Kaminska, A.Suchocki, H.Hirayama, Y.Aoyagi
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Journal Title
Phys. Stat. Sol.(a) vol.201 no.2
Pages: 190-194
Description
「研究成果報告書概要(欧文)」より
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