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2002 Fiscal Year Final Research Report Summary

Crystal growth of 3C-SiC on Si substrates by channel epitaxy method

Research Project

Project/Area Number 13450012
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto Institute of Technology

Principal Investigator

NISHINO Shigehiro  Kyoto Institute of Technology, Faculty of Engineering and Design, Professor, 工芸学部, 教授 (30089122)

Co-Investigator(Kenkyū-buntansha) HAYASHI Yasuaki  Kyoto Institute of Technology, Faculty of Engineering and Design, Associate Professor, 工芸学部, 助教授 (30243116)
Project Period (FY) 2001 – 2002
Keywordschannel epitaxy / 3C-SiC / heteroepitaxial growth / selective growth / silicon carbide / cubic SiC / CVD method / vapor phase growth
Research Abstract

This study reports on heteroepitaxial growth of 3C-SiC on Si substrate with channel epitaxy method in order to reduce the high density of defects and the strain in the 3C-SiC epilayer. It has been necessary to investigate the epitaxial growth close to the 3C-SiC/Si interface. 3C-SiC layer was grown mainly on a (111) and (100) silicon substrates by using Si2(CH3)6 (Hexamathyldisilane : HMDS). The diameter of each 3C-SiC island depended on the temperature of CVD growth at an early stage of epitaxial growth of 3C-SiC on Si substrate.
Three-dimensional fine structures were formed by using "micro-channel epitaxy (MCE)". It was important to parepare the line and space structures by Reactive Ion Etching method. Line and space interval is a key to obtain good channel epitaxy. The crystallinity of formed in MCE became like polycrystalline without the control of nucleation and growth. This result may be improved by close control of experimental parameters at initial stage of 3C-SiC grown on Si substrates. T-shape pattern was formed on the Si(100) substrate and this structure was effective to get channel epitaxy. In this case, we call this shape as vertial channel epitaxy. Epitaxial layer was grown on the top of T-shape area not from the channel in the Si substrate. Carbonization was a key to obtain smooth epi-layer on the T-shape plate. Once epilayers extends nicely on the T-shape area, those layers coalescences to neighbor epilayer. Coalescenced region was examine by TEM. Annihilation of defects should be studied in detail.

  • Research Products

    (10 results)

All 2004 2003 2002 2001

All Journal Article (10 results)

  • [Journal Article] Pendio Epitaxial Growth of 3C-SiC on Si Substrates2004

    • Author(s)
      A.Shoji, Y.Okui, T.Nishiguchi, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 457-460

      Pages: 257-260

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Pendio Epitaxial Growth of 3C-SiC on Si Substrates2004

    • Author(s)
      A.Shoji, Y.Okui, T.Nishiguchi, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum Vols. 457-460

      Pages: 257-260

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semiconductors2003

    • Author(s)
      T.Nishiguchi, Y.Mukai, S.Ohshima, S.Nishino
    • Journal Title

      Materials phys. stat. sol 【○!C】0

      Pages: 2585-2588

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] CVD growth of 3C-SiC on various orientations of Si substrates for the substrate of nitride semiconductors2003

    • Author(s)
      T.Nishiguchi, Y.Mukai, S.Ohshima, S.Nishino
    • Journal Title

      phys.stat.sol. (c) 0

      Pages: 2585-2588

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Lateral over-growth of 3C-SiC on patterned Si(111) substrates2002

    • Author(s)
      S.Nishino, C.Jacob, Y.Okui, S.Ohshima, Y.Masuda
    • Journal Title

      J. Crystal Growth

      Pages: 1250-1253

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Selective Epitaxial Growth of pyramidal 3C-SiC on patterned Si substrate2002

    • Author(s)
      Y.Okui, C.Jacob, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum 389-393

      Pages: 331-334

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Lateral over-growth of 3C-SiC on patterned Si(111) substrates2002

    • Author(s)
      S.Nishino, C.Jacob, Y.Okui, S.Ohshima, Y.Masuda
    • Journal Title

      J.Crystal Growth

      Pages: 1250-1253

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Selective Epitaxial Growth of pyramidal 3C-SiC on patterned Si substrate"2002

    • Author(s)
      Y.Okui, C.Jacob, S.Ohshima, S.Nishino
    • Journal Title

      Materials Science Forum vols 389-393

      Pages: 331-334

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Low temperature selective and lateral epitaxial growth of silicon carbide on patterned silicon substrates2001

    • Author(s)
      C, Chacko, P.Pirouz, S.Nishino
    • Journal Title

      Materials Science Forum 353-356

      Pages: 127-130

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Low temperature selective and lateral epitaxial growth of silicon carbide on pattgerened silicon substrates2001

    • Author(s)
      C.Chacko, P.Pirouz, S.Nishino
    • Journal Title

      Materials Science Forum 353-356

      Pages: 127-130

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2008-05-27  

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