2002 Fiscal Year Final Research Report Summary
High Rep-rate Fast Pulsed Power Modulator Using Static Induction Thyristors
| Project/Area Number |
13450110
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電力工学・電気機器工学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
HOTTA Eiki Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Professor, 大学院・総合理工学研究科, 教授 (70114890)
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| Co-Investigator(Kenkyū-buntansha) |
WATANABE Masato Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Associate, 大学院・総合理工学研究科, 助手 (20251663)
OKINO Akitoshi Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Associate Professor, 大学院・総合理工学研究科, 助教授 (60262276)
HORIOKA Kazuhiko Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Professor, 大学院・総合理工学研究科, 教授 (10126328)
TAKAYAMA Ken High Energy Accelerator Research Organization, Accelerator Laboratory, Professor, 加速器研究施設, 教授 (20163321)
ISHII Shozo Tokyo Institute of Technology, Graduate School of Science and Engineering, Professor, 大学院・理工学研究科, 教授 (40016655)
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| Project Period (FY) |
2001 – 2002
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| Keywords | Induction Synchrotron / High Repetition Rate / Semiconductor Switch / Switching Loss / Magnetic Core / Hysterisis / Reset Pulse |
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| Research Abstract |
Using high-voltage static induction (SI) thyristors with fast ON-OFF capability, a high rep-rate pulsed power modulator was made and tested to obtain fundamental characteristics for realizing an induction synchrotron Pulse response of magnetic core bas been also investigated.
Following results have been obtained through the research of 2 year.
1. An inductive-energy-storage type gate driver was designed and made, which is especially suitable for turn-OFF action of SI thyristors.
2. Using fast power MOSFETs as turn-ON switches and an SI thyristor with a holding voltage of 3 kV as a turn-OFF switch, an inductive-energy-storage pulsed power modulator was made. In the first year of research, the following experimental results were obtained without a load resistor accelerating voltage of 15 V, reset voltage of l00 V, rep-rate of 100 pps. In the second year, using a dummy load of 50 Ω and an air-core inductor of 2.6 μH, a peak reset voltage of 1500V with FWHM of 120 ns has been obtained for an accelerating voltage of 250 V with a pulse width of 900 ns. From the measured switching loss, maximum rep-rate of 588 kpps could be expected.
3. A pulsed power modulator, which is using a power MOSFET as a switching element, has shown fast operation with a reset voltage of 1 kV and a rep-rate of 1 Mpps.
4. Using a magnetic core of Finemet, pulse characteristics such as core losses were evaluated and then investigated the method of cooling.
5. In order to increase the operating frequency, an SI thyristor with rated current of up to 50 A has been developed.
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Research Products
(15 results)
