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2003 Fiscal Year Final Research Report Summary

Behavior of Hydrogen Atoms Incorporated into Specific Structures between Platinum and CVD Diamond Films

Research Project

Project/Area Number 13450128
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

ITO Toshimichi  Osaka Univ., Graduate School of Engineering, 大学院・工学研究科, 教授 (00183004)

Co-Investigator(Kenkyū-buntansha) TERAJI Tokuyuki  Osaka Univ., Graduate School of Engineering, Assistant Prof., 大学院・工学研究科, 助手 (50332747)
Project Period (FY) 2001 – 2003
Keywordsplatinum thin film / diamond thin film / platinum particles / buried structure / hydrogen / microwave plasma / self-assembly / CVD
Research Abstract

We have found that nm-sized sphere-like platinum particles can be fabricated through self-assembly of platinum thin films deposited on CVD diamond substrates which occurs during CVD plasma processes using microwave plasma including hydrogen. The size of the particles, which can be. well controlled simply by changing the thickness of the platinum films, determines the crystalline quality of the particles. There is a tendency that the particles are polycrystalline when the size is larger than 20 nm while they are single-crystalline whose crystalline directions are correlated with those. of the diamond substrate when it is less than 10 nm. It has also been verified from TEM and SIMS analyses that such self-organized Pt particles are expanded by about 30 %, which results from absorption of a substantial amount of hydrogen atoms in the particles. This is self-consistent with the fact that the lattice constant can be reduced to the original value of bulk Pt through desorption of the absorbed hydrogen atoms when the expanded particles are annealed in vacuum at high temperatures. Temperature-programmed thermal desorption measurements of the H-contained Pt particles reveal that the H desorption substantially occurs at temperatures between 600. and 800℃. Iteration of the present platinum deposition and subsequent diamond growth processes leads to multi-layered structure of Pt particles buried in CVD diamond films. Furthermore, selective etching of diamond in the Pt-diamond multi-layer resulted in a substantial increase in the density of Pt particles on the specimen surface. We have also indicated that H atoms can exist relatively much more near the interface between the buried Pt particles and diamond overlayer than in the diamond overlayer.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] T.Ito, T.Watanabe, M.Irie, J.Nakamura, T.Teraji: "Electron Emissions from CVD Diamond Surfaces"Diamond and Related Materials. Vol.12. 434-441 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 濱田充弘, 寺地徳之, 伊藤利道: "収束イオンビームを用いて加工した高電界印加型ダイヤモンド素子構造における残留カリウムの電界誘起効果"真空. Vol.46(No.3). 222-224 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J.Nakamura, S.Fukumoto, T.Teraji, H.Murakami, T.Ito: "Hydrogen-Related Structural Changes on CVD Diamond (100) Surfaces by Ultra-High-Vacuum Annealing"Applied Surface Science. Vol.216. 59-64 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Hamada, T.Teraji, T.Ito: "Field-Induced Effects of Implanted Ga on High-Electric-Field Diamond Devices Fabricated by Focused Ion Beam"Applied Surface Science. Vol.216. 65-71 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 辻本健一, 三谷諭司, 寺地徳之, 伊藤利道: "気相合成ダイヤモンド薄膜上におけるプラチナ薄膜の低温形態変化"真空. Vol.46(No.9). 703-707 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tsujimoto, S.Mitani, T.Teraji, T.Ito: "Fabrication of Nano-Sized Platinum Particles Self-Assembled on and in CVD Diamond Films"Applied Surface Science. (発表予定). (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Ito, T.Watanabe, M.Irie, J.Nakamura T.Teraji: "Electron Emissions from CVD Diamond Surfaces"Diamond and Related Materials. Vol.12. 434-441 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Hamada, T.Teraji, T.Ito: "Field-Induced Effects of Residual Gallium Atoms on High-Electric-Field Diamond Device Structures Fabricated by Focused Ion Beam (in Japanese)"Journal of the Vacuum Society of Japan. Vol.46 (No.3). 222-224 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J.Nakamura, S.Fukumoto, T.Teraji, H.Murakami, T.Ito: "Hydrogen -Related Structural Changes on CVD Diamond (100) Surfaces by Ultra-High-Vacuum Annealing"Applied Surface Science. Vol.216. 59-64 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Hamada, T.Teraji, T.Ito: "Field-Induced Effects of Implanted Ga on High-Electric-Field Diamond Devices Fabricated by Focused Ion Beam"Applied Surface Science. Vol.216. 65-71 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Tsujimoto, S.Mitani, T.Teraji, T.Ito: "Low-Temperature Morphology Changes of Platinum Thin Films on Chemical-Vapor-Deposited Diamond Thin Layers (in Japanese)"Journal of the Vacuum Society of Japan. Vol.46(No.9). 703-707 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Tsujimoto, S.Mitani, T.Teraji, T.Ito: "Fabrication of Nano-Sized Particles Self-Assembled on and in CVD Diamond Films"Applied Surface Science. (to be published). (2004)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2005-04-19  

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