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2002 Fiscal Year Final Research Report Summary

A Study of Metal/Insulator/Semiconductor Super-Heterostructure Material Systems for Multifunctional Electron Devices

Research Project

Project/Area Number 13555089
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionTokyo Institute of Technology

Principal Investigator

ASADA Masahiro  Tokyo Institute of Technology, Information Processing, Professor, 大学院・総合理工学研究科, 教授 (30167887)

Co-Investigator(Kenkyū-buntansha) WATANABE Masahiro  Tokyo Institute of Technology, Information Processing, Associate Professor, 大学院・総合理工学研究科, 助教授 (00251637)
Project Period (FY) 2001 – 2002
KeywordsQuantum effect devices / Resonant tunneling diode / Metal / insulator / semiconductor heterostructures / Heterostructures with fluoride materials / Nano-area local epitaxy / Vertical MOSFET / Schottky source / drain MOSFET / Integrated high functional devices
Research Abstract

This project aimed at fabrication of electron devices using metal/insulator/semiconductor heterostructures, in which the quantum effect takes place remarkably, and achievement of their high functional operations, in order to promote the down sizing and high density of large scale integrated circuits. The results are summarized as follows.
Crystal growth of resonant tunneling structures for the quantum-effect devices was investigated by choosing CaF2/CdF2/Si heterostructure system in which high on-off ratio and multi-functional operation are expected due to large potential barrier and sharp quantized energy levels. In order to precisely control the thickness of the epitaxial layer in the nano-scale range, we proposed nano-area local epitaxy in which the growth area is restricted in 100nm-order region of the surface. By this technique, remarkable uniformity of the characteristics was achieved, and systematic experiments for the structure dependence of the electrical characteristics became … More possible for the first time. By using hydrogen-terminated substrate, the resonant tunneling structure was grown on Si(100) substrates. The negative differential resistance was obtained for the first time at room temperature for this material system on Si(100). The negative differential resistance on Si(100) was also obtained with high reproducibility using inclined substrates with an appropriate off angle by which the anti-phase boundary is less included in the grown layers.
Vertical MOSFETs integrated with CaF2/CdF2/Si low-current density resonant tunneling diode between the gate and source electrodes were proposed. 50% reduction of the device area was shown to be possible in the SRAM by this structure compared with the circuits with MOSFETs only. The vertical MOSFETs with PtSi Schottky source/drain was fabricated using beam lithography. The room temperature operation was achieved for the devices with 55nm-long gates, 5 and 8nm-thick gate oxides, and 8-30nm-long channels. CaF2/CdF2 triple-barrier resonant tunneling diodes were integrated these vertical transistors, and electrical characteristics attributed to the resonant tunneling was obtained at room temperature. Less

  • Research Products

    (47 results)

All Other

All Publications (47 results)

  • [Publications] M.Asada: "Quantum theory of a semiconductor klystron"Physical Review B. 67・11. 115303 1-115303 8 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Asada: "Theory of superradiance from photon-assisted tunneling electrons and its application to a terahertz device"Journal of Applied Physics. 91(July 1,in press). (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tsutsui, T.Nagai, M.Asada: "Analysis and Fabrication of p-type Vertical PtSi Schottky Source/Drain MOSFET"Trans.Electron.IEICE of Japan. E85-C・5. 1191-1199 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Tsutsui, M.Asada: "Dependence of Drain Current on Gate Oxide Thickness of p-type Vertical PtSi Schottky Source/Drain MOSFETs"Jpn.J.Applied Physics. 41・1. 54-58 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Niiyama, T.Maruyama, N.Nakamura, M.Watanabe: "Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)"Jpn.J.Appl.Phys.. 41・7A. L751-L753 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Maruyama, N.Nakamura, M.Watanabe: "Crystal Growth of BeZnSe on CaF_2/Si(111) Subtrate"Jpn.J.Appl.Phys.. 41・8A. L876-L877 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Watanabe, T.Ishikawa, M.Matsuda.T.Kanazawa, M.Asada: "Room temperature negative differential resistance of CdF_2/CaF_2 resonant tunneling diode grown on Si using nanoarea local epitaxy"Abstract of International Conference on Physics of Semiconductors (Edinburgh/UK). Part III. 157 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Watanabe, T.Ishikawa, M Matsuda, T.Kanazawa, M.Asada: "Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy"Electronic Materials Conference (Santa Barbara, CA/USA). Z5 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Watanabe, T.Ishikawa, M.Matsuda, T.Kanazawa, M.Asada: "Systematic variation of negative differential resistance characteristics of CdF2/CaF2 Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy"Int.Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics (Tsukuba/Japan). Tu4-3 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Asada, N.Sashinaka: "Nonlinear Terahertz Gain Estimated from Multi-Photon-Assisted Tunneling in Resonant Tunneling Diodes"Jpn.J.Appl.Phys.. 40・9. 5394-5398 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Asada: "Density-Matrix Modeling of Terahertz Photon-Assisted Tunnelig and Optical Gain in Resonant Tunneling Structures"Jpn.J.Appl.Phys.. 40・9. 5251-5256 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Asada: "Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes"Jpn.J.Appl.Phys.. 40・12. 6809-6810 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Maruyama, M.Watanabe: "Theoretical Analysis of the Threshold Current Density in BeMgZnSe Quantum Well Ultraviolet Lasers"Jpn.J.Applied Physics. 40・12. 6872-6873 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Asada, N.Sashinaka: "Nonlinear Tera-Hertz Gain Estimated from Multiple Photon-Assisted Tunneling in Resonant Tunneling Diode"International Conference on Indium Phosphide and Related Materials (Nara/Japan). WP-29 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Asada: "Density-Matrix Modeling of THz Photon-Assisted Tunneling in Resonant Tunneling Diodes"Advanced Research Workshop on Quantum Transport in Semiconductors (Maratea/Italy). G3-8 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Asada, N.Sashinaka: "Theoretical Analysis of THz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Diodes"International Conference on Modulated Semiconductor Structures (Linz/Austria). ThP-56 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Watanabe, M.Asada: "CaF2/CdF2 Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate"Frontier Science Research Conference, Science and Technology of Silicon Materials (Lajolla, CA/USA). S-II (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Watanabe, N.Sakamaki, T.Ishikawa: "Room Temperature Negative Differential Resistance with High Peak-to-Valley Current Ratio of CaF2/CdF2 Resonant Tunneling Diode on Silicon"International Conference on Indium Phosphide and Related Materials (Nara/Japan). WP-30 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Watanae, N.Sakamaki, T.Ishikawa, D.Okamoto: "Selective Growth of CdF2/CaF2 Resonant Tunneling Diode Nanostructure on Si"Electronic Materials Conference (Notre Dame/USA). Y4 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Maruyama, N.Nakamura, M.Watanabe: "Epitaxial Growth of BeZeSe on CaF2/Si(111) Substrate"Electronic Materials Conference (Notre Dame/USA). Y3 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Watanabe, N.Sakamaki, T.Ishikawa: "Fine-Area Epitaxy of CaF2/CdF2 Resonant Tunneling Diode on Si"International Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics (Tsukuba/Japan). TuP-29 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Watanabe, N.Sakamaki, T.Ishikawa: "Feasility study of CaF2/CdF2 intersubband transition lasers"Pacific Rim Conference on Lasers and Electro-Optics (Chiba/Japan). WC1-5 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 浅田雅洋(分担): "ナノ光工学ハンドブック"朝倉書店. (6) (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 浅田雅洋(分担): "応用物理ハンドブック(第2版)"丸善株式会社. (3) (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 浅田雅洋(分担): "酸化物エレクトロニクス"培風館. (10) (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] M.Asada: "Quantum theory of a semiconductor klystron"Phys. Rev. B. 67, No. 11. 115303 1-8 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Asada: "Theory of superradiance from photon-assisted tunneling electrons and its application to terahertz device"J. Appl. Phys.. 91, No. 1, in press. (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Tsutsui, T. Nagai, and M. Asada: "Analysis and Fabrication of p-type Vertical PtSi Schottky Source/Drain MOSFET"Trans. Electron. IEICE of Japan. E85-C, No.5. 1191-1199 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Tsutsui and M.Asada: "Dependence of Drain Current on Gate Oxide Thickness of p-type Vertical PtSi Schottky Source/Drain MOSFETs"Jpn.J.Applied Physics. 41, No.1. 54-58 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y. Niiyama, T. Maruyama, N. Nakamura, and M. Watanabe: "Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)"Jpn. J. Appl. Phys.. 41, No.7A. L751-L753 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Maruyama, N. Nakamura, and M. Watanabe: "Crystal Growth of BeZnSe on CaF_2/Si(111)Subtrate"Jpn. J. Appl. Phys.. 41, No.8A. L876-L877 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kanazawa, and M. Asada: "Room temperature negative differential resistance of CdF2/CaF2 resonant tunneling diode grown on Si using nanoarea local epitaxy"Int. Conf. on Physics of Semiconductors, Edinburgh. P157. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, and M. Asada: "Room Temperature Negative Differential Resistance of CdF_2/CaF_2 Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy"Electronic Materials Conference, Santa Barbara/CA. Z5. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, and M. Asada: "Systematic variation of negative differential resistance characteristics of CdF_2/CaF_2 Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy"Int. Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '2(QNN '02) , Tsukuba. Tu4-3. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Asada and N.Sashinaka: "Nonlinear Terahertz Gain Estimated from Multi- Photon-Assisted Tunneling in Resonant Tunneling Diodes"Jpn. J. Appl. Phys.. 40, No.9. 5394-5398 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Asada: "Density-Matrix Modeling of Terahertz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Structures"Jpn. J. Appl. Phys.. 40, No.9. 5251-5256 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Asada: "Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes"Jpn. J. Appl. Phys.. 40, No.12. 6809-6810 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Maruyama and M. Watanabe: "Theoretical Analysis of the Threshold Current Density in BeMgZnSe Quantum Well Ultraviolet Lasers"Jpn. J. Appl. Phys.. 40. No. 12. 6872-6873 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Asada and N. Sashinaka: "Nonlinear Tera-Hertz Gain Estimated from Multiple Photon-Assisted Tunneling in Resonant Tunneling Diode"International Conference on Indium Phosphide and Related Materials (IPRM-01), Nara. WP-29. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Asada: "Density-Matrix Modeling of THz Photon-Assisted Tunneling in Resonant Tunneling Diodes"Advanced Research Workshop on Quantum Transport in Semiconductors, Maratea/Italy. G3-8. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Asada and N. Sashinaka: "Theoretical Analysis of THz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Diodes"International Conference on Modulated Semiconductor Structures (MSS-10), Linz/Austria. ThP-56. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Watanabe and M. Asada: "CaF_2/CdF_2 Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate"Frontier Science Research Conference, Science and Technology of Silicon Materials, LaJolla/CA. S-II. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M. Watanabe, N. Sakamaki, and T. Ishikawa: "Room Temperature Negative Differential Resistance with High Peak-to-Valley Current Ratio of CaF2/CdF2 Resonant Tunneling Diode on Silicon"International Conference on Indium Phosphide and Related Materials (IPRM-01), Nara. WP-30. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Watanabe, N.Sakamaki, T.Ishikawa, and D.Okamoto: "Selective Growth of CdF2/CaF2 Resonant Tunneling Diode Nanostructure on Si"Electronic Materials Conference, Notre Dame/USA. Y4. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Maruyama, N.Nakamura, and M.Watanabe: "Epitaxial Growth of BeZeSe on CaF2/Si(111) Substrate"Electronic Materials Conference, Notre Dame/USA. Y3. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Watanabe, N.Sakamaki, and T.Ishikawa: "Fine-Area Epitaxy of CaF2/CdF2 Resonant Tunneling Diode on Si"International Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics, Tsukuba. TuP-29. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] M.Watanabe, N.Sakamaki, and T. Ishikawa: "Feasility study of CaF2/CdF2 intersubband transition lasers"Pacific Rim Conference on Lasers and Electro-Optics, Chiba. WCl-5. (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2004-04-14  

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