2003 Fiscal Year Final Research Report Summary
Substrate using epitaxial Al_2O_3 film for hetero-epitaxial growth and device applications
| Project/Area Number |
13555093
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
ISHIDA Makoto Toyohashi University, Faculty of Engineering, Professor, 工学部, 教授 (30126924)
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| Co-Investigator(Kenkyū-buntansha) |
OSHIMA Naoki Yamaguchi University, Faculty of Engineering, Lecturer, 工学部, 講師 (70252319)
SAWADA Kazuaki Toyohashi University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (40235461)
WAKAHARA Akihiro Toyohashi University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (00230912)
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| Project Period (FY) |
2001 – 2003
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| Keywords | epitaxial / Al_2O_3 / alumina / heteroepitaxy / GaN / Ferroelectlic film / FeRAM / Pyroelastric Sensor |
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| Research Abstract |
We proposed the use of an epitaxial γ-Al_2O_3 film as a buffer layer to form epitaxial PZT thin file and, epitaxial Pt films on Si substrates. The epitaxial γ-Al_2O_3 films were grown on a Si substrate using chemical vapor deposition (CVD) and their applications have been reported γ-Al_2O_3 is spinel structure as is MgO. The lattice mismatch between γ-Al_2O_3 and Pt is smaller than that between MgO and Pt. This suggests a possibility of growing epitaxial Pt films on γ-Al_2O_3. We report the first successful formation of epitaxial Pt films and PZT film on Si substrates by using an epitaxial γ-Al_2O_3 buffer layer. Epitaxial Pt films were successfully RF sputtered on Si substrates using an epitaxial γ-Al_2O_3 buffer layer. The Crystallinity of the Pt films was strongly affected by deposition temperature. XRD and RHEED patterns indicated that an epitaxial Pt film was grown on the γ-Al_2O_3/Si substrate. Epitaxial Pt on γ-Al_2O_3/Si substrates could provide a possible way to improve the performance of a device whose properties depend on the orientation of a ferroelectric film.
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