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2003 Fiscal Year Final Research Report Summary

Substrate using epitaxial Al_2O_3 film for hetero-epitaxial growth and device applications

Research Project

Project/Area Number 13555093
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionToyohashi University of Technology

Principal Investigator

ISHIDA Makoto  Toyohashi University, Faculty of Engineering, Professor, 工学部, 教授 (30126924)

Co-Investigator(Kenkyū-buntansha) OSHIMA Naoki  Yamaguchi University, Faculty of Engineering, Lecturer, 工学部, 講師 (70252319)
SAWADA Kazuaki  Toyohashi University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (40235461)
WAKAHARA Akihiro  Toyohashi University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (00230912)
Project Period (FY) 2001 – 2003
Keywordsepitaxial / Al_2O_3 / alumina / heteroepitaxy / GaN / Ferroelectlic film / FeRAM / Pyroelastric Sensor
Research Abstract

We proposed the use of an epitaxial γ-Al_2O_3 film as a buffer layer to form epitaxial PZT thin file and, epitaxial Pt films on Si substrates. The epitaxial γ-Al_2O_3 films were grown on a Si substrate using chemical vapor deposition (CVD) and their applications have been reported γ-Al_2O_3 is spinel structure as is MgO. The lattice mismatch between γ-Al_2O_3 and Pt is smaller than that between MgO and Pt. This suggests a possibility of growing epitaxial Pt films on γ-Al_2O_3. We report the first successful formation of epitaxial Pt films and PZT film on Si substrates by using an epitaxial γ-Al_2O_3 buffer layer. Epitaxial Pt films were successfully RF sputtered on Si substrates using an epitaxial γ-Al_2O_3 buffer layer. The Crystallinity of the Pt films was strongly affected by deposition temperature. XRD and RHEED patterns indicated that an epitaxial Pt film was grown on the γ-Al_2O_3/Si substrate. Epitaxial Pt on γ-Al_2O_3/Si substrates could provide a possible way to improve the performance of a device whose properties depend on the orientation of a ferroelectric film.

  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] Md.Shahjahan, R.Ito, K.Sawada, M.Ishida: "Current Voltage Characteristics with Different Well and Barrier Thickness of Resonant Tunneling Diode Fabricated by epi-Si γ-Al_2O_3 Heterostructures"Journal of IEEE Transaction of Electron Devices. (to be published). (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Md.Shahjahan, T.Okada, K.Sawada, M.Ishida: "Effect of Annealing on the Physical and Electrical Properties of Ultrathin Crystalline γ-Al_2O_3 High-k Dielectric Deposited on Si-Substrates"Japanese Journal of Applied Physics. (in print). (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Akai, K.Hirabayashi, M.Yokawa, K.Sawada, M.Ishida: "Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al_2O_3(001) buffer layer"Journal of Crystal Growth. Vol.264,No.1-3. 463-467 (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Manoj Kumar, R.M.Mehra, A.Wakahara, M.Ishida, A.Yoshida: "Epitaxial growth of high quality AnO : Al film on Silicon with a thin γ-Al_2O_3"Journal of Applied Physics. Vol.93,No.7. 3837-3843 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Akai, K.Sawada, M.Ishida: "Fabrication of Pb(Zr, Ti)O_3 films on epitaxial γ-Al_2O_3(001)/Si(001) substrates"Journal of Crystal Growth. Vol.259,No.1-2. 90-94 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] D.Akai, M.Yokawa, K.Hirabayashi, K.Sawada, M.Ishida: "Ferroelectric Thin Fllms on Epitaxial γ-Al_2O_3/Si substrates"Technical Report of IEICE. Vol.103,No.51. 61-65 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Oshima, S.Okamoto, K.Shibata, Y.Orihashi, S.Kageyama, M.Ishida, T.Yazawa, Gomes Camargo: "Epitaxial Growth of GaN by Gas Source Morecular Beam Epitaxy Using NH_3"Transactions of the Materials Research Society of Japan. 27(2). 475-478 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Wakahara, N.Kawamura, H.Oishi, H.Okada, A.Yoshida, M.Ishida: "Heteroepitaxial Growth of GaN on γ-Al_2O_3/Si Substrate by Organometallic Vapor Phase Epitaxy"Sensors and Metarials. Vol.14,No.5. 263-270 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Wakahara, H.Oishi, H.Okada, A.Yoshida, Y.Koji, M.Ishida: "Organometallic vapor phase epitaxy of GaN on Si(111) with a γ-Al_2O_3 epitaxial intermediate layer."Journal of Crystal Growth. 236. 21-25 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Md.Shahjahan, Y.Koji, K.Sawada, M.Ishida: "Fabrication of Resonance Tunnel Diode by γ-Al_2O_3/Si Multiple Heterostructures"Japanese Journal of Applied Physics. Vol.41,Part.1,No.4B. 2602-2605 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Md.Shahjahan, N.Takahashi, K.Sawada, M.Ishida: "Fabrication and Electrical Characterization of Ultrathin Crystalline Al_2O_3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy"Japanese Journal of Applied Physics. Vol.41,part2,No.12B. L1474-L1477 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Md.Shahjahan, R.Ito, K.Sawada, M.Ishida: "Current-Voltage Characteristics with Different Well and Barrier Thickness of Resonant Tunneling Diode Fabricated by epitaxial-Si/g-Al_2O_3 Heterostructures"Journal of IEEE Transaction of Electron Devices. (to be submitted). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Md.Shahjahan, T.Okada, K.Sawada, M.Ishida: "Effect of Annealing on the Physical and Electrical Properties of Ultrathin Crystalline g-Al_2O_3 High-k Dielectric Deposited on Si-Substrates"Japanese Journal of Applied Physics. (in print). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.Akai, K.Hirabayashi, M.Yokawa, K.Sawada, M.Ishida: "Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial g-Al_2O_3(001) buffer layer"Journal of Crystal Growth. Vol.264, No.1-3. 463-467 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Manoj Kumar, R.M.Mehra, A.Wakahara, M.Ishida, A.Yoshida: "Epitaxial growth of high quality ZnO : Al film on Silicon with a thin g-Al_2O_3"Journal of Applied Physics. Vol.93 No.7. 3837-3843 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.Akai, K.Sawada, M.Ishida: "Fabrication of Pb(Zr, Ti)O_3 films on epitaxial g-Al_2O_3(001)/Si(001) substrates"Journal of Crystal Growth. Vol.259, No.1-2. 90-94 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] D.Akai, M.Yokawa, K.Hirabayashi, K.Sawada, M.Ishida: "Ferroelectric Thin Films on Epitaxial g-Al_2O_3/Si substrates"Technical Report of IEICE. Vol.103, No.51. 61-65 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Oshima, S.Okamoto, K.Shibata, Y.Orihashi, S.Kageyama, M.Ishida, T.Yazawa, Gomes Camargo: "Epitaxial Growth of GaN by Gas Source Morecular Beam Epitaxy Using NH_3."Transactions of the Materials Research Society of Japan. 27(2). 475-478 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Wakahara, N.Kawamura, H.Oishi, H.Okada, A.Yoshida, M.Ishida: "Heteroepitaxial Growth of GaN on g-Al_2O_3/Si Substrate by Organometallic Vapor Phase Epitaxy"Sensors and Materials. Vol.14, No.5. 263-270 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] A.Wakahara, H.Oishi, H.Okada, A.Yoshida, Y.Koji, M.Ishida: "Organometallic vapor phase epitaxy of GaN on Si (111) with a g-Al_2O_3 epitaxial intermediate layer"Journal of Crystal Growth. 236. 21-25 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Md.Shahjahan, Y.Koji, K.Sawada, M.Ishida: "Fabrication of Resonance Tunnel Diode by g-Al_2O_3/Si Multiple Heterostructures"Japanese Journal of Applied Physics. Vol.41, Part.1, No.4B. 2602-2605 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Md.Shahjahan, N.Takahashi, K.Sawada, M.Ishida: "Fabrication and Electrical Characterization of Ultrathin Crystalline Al_2O_3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy"Japanese Journal of Applied Physics. Vol.41, Part.2, No.12B. L1474-L1477 (2002)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2005-04-19  

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