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2002 Fiscal Year Final Research Report Summary

High-Voltage, High-Efficiency, High-Speed Power MOSFET Using Wide Bandgap Semiconductor SiC

Research Project

Project/Area Number 13555094
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

KIMOTO Tsunenobu  Kyoto University, Department of Electronic Science and Engineering, Associate Professor, 工学研究科, 助教授 (80225078)

Co-Investigator(Kenkyū-buntansha) SUDA Jun  Kyoto University, Department of Electronic Science and Engineering, Lecturer, 工学研究科, 講師 (00293887)
MATSUNAMI Hiroyuki  Kyoto University, Department of Electronic Science and Engineering, Professor, 工学研究科, 教授 (50026035)
Project Period (FY) 2001 – 2002
KeywordsSilicon Carbide / Power Device / MOSFET / Oxide / Semiconductor Interface / Channel Mobility
Research Abstract

Control of MOS interface, device processing, and fabrication of high-voltage MOSFETs have been investigated by using a wide bandgap semiconductor silicon carbide (SiC), which shows high breakdown field and other excellent physical properties. In control of MOS interface, thermal oxidation at high temperature resulted in the improvement of the MOS quality, and high channel mobilities of 78 cm^2/Vs and 22 cm^2/Vs were obtained for 6H-SiC(OOOl) and 4H-SiC(OOOl) MOSFETs, respectively. 4H-SiC(ll20) and (0338) MOSFETs exhibited a high channel mobility of 30-40 cm^2/Vs. In device processing, thick SiO_2 films deposited by plasma CVD could successfully used as an implantation mask. Short-channel MOSFETs with a channel length of 1 μm could be processed. The electrical activation of implanted dopants was significantly improved by increasing annealing temperature after implantation. The structure of lateral SiC MOSFETs with RESURF (Reduced Surface Field) structure was designed by using a 2D device simulation. The RESURF dose, depth, and the drift layer structure were optimized. SiC lateral RESURF MOSFETs were fabricated on 4H-SiC and 6H-SiC which were grown in our group. The MOSFET showed a very high breakdown voltage of 1 kV and a low on-resistance of 0.1 Ωcm^2. This characteristics outperforms the "Si limit" which is theoretically determined from the material properties, demonstrating the much potential of SiC power devices.

  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] T.Kimoto: "Shallow states at SiO_2/4H-SiC interface on (1120) and (0001) faces"Applied Physics Letters. 81. 301-303 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kimoto: "Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(0338)"Applied Physics Letters. 81. 4772-4774 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kimoto: "4H-SiC MOSFET on (0338) face"Materials Science Forum. 389-393. 1065-1068 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kimoto: "Avalanche phenomena in 4H-SiC pn diodes fabricated by Al and B implantation"IEEE Transaction Electron Devices. 49. 1505-1510 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kimoto: "High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes"Journal of Applied Physics. 91. 4242-4248 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kimoto: "High-voltage 4H-SiC Schottky barrier diodes fabricated on (0338) with closed micropipes"Japanese Journal Applied Physics. 42. L13-L16 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T. Kimoto: "Shallow states at SiO_2/4H-SiC interface on (1120) and (0001) faces"Applied Physics Letters. Vol.81. 301-303 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Kimoto: "Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(0338)"Applied Physics Letters. Vol.81. 4772-4774 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Kimoto: "4H-SiC MOSFET on (0338) face"Materials Science Forum. Vol.389-393. 1065-1068 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Kimoto: "Avalanche phenomena in 4H-SiC pn diodes fabricated by Al and B implantation"IEEE Transaction Electron Devices. Vol.49. 1505-1510 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Kimoto: "High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes"Journal of Applied Physics. Vol.91. 4242-4248 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Kimoto: "High-voltage 4H-SiC Schottky barrier diodes fabricated on (0338) with closed micropipes"Japanese Journal of Applied Physics. Vol.42. L13-L16 (2003)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2004-04-14  

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