2002 Fiscal Year Final Research Report Summary
PREPARATION OF THIN FILM LIGHT WAVEGUIDE CIRCUIT OF FLUORIDE GLASS BY PLASMA CVD AND ATMOSPHERIC PLASMA
| Project/Area Number |
13555174
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | KOBE UNIVERSITY |
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Principal Investigator |
KAWAMOTO Yoji KOBE UNIVERSITY, SCIENCE, PROFESSOR, 理学部, 教授 (00030776)
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| Co-Investigator(Kenkyū-buntansha) |
KONISHI Akio NIPPON YAMAMURA GLASS CO.,LTD., NEW GLASS RESEARCH CENTER, RESEARCH GROUP LEADER, ニューガラス研究所, 研究グループリーター
QIU Jianbei JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, CENTER FOR NANO MATERIALS AND TECHNOLOGY, ASSISTANT, ナノマテリアルテクノロジーセンター, 助手 (40345666)
UCHINO Takashi KOBE UNIVERSITY, SCIENCE, ASSOCIATE PROFESSOR, 理学部, 助教授 (50273511)
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| Project Period (FY) |
2001 – 2002
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| Keywords | GLASS / THIN FILM / PLASMA CVD / ATMOSPHERIC PLASMA / LIGHT WAVEGUIDE CIRCUIT |
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| Research Abstract |
1. An electron cyclotron plasma-enhanced chemical vapor deposition apparatus, which is suitable for producing planar fluoride glass films, was developed.
2. ZnF_2-BaF_2 thin films were prepared on CaF2(111) substrates by an ECR plasma-enhanced CVD technique. As starting materials on Zn and Ba, β-diketonates of Zn(thd)_2 and Ba(hfa)_2(tg) were used, respectively. On the other hand, Ar and NF_3 gases were used as a carrier gas and a fluorinating gas, respectively. ZnF_2-BaF_2 thin films were deposited on substrates of single crystal CaF_2(111) plates under various deposition conditions (plasma power, deposition rate, substrate temperature, etc.) Amorphous thin films were obtained in compositions of ZnF_2 alone and 60ZnF_2・40BaF_2. The synthesis of an amorphous ZnF_2 film is the first time.
3. For the AlF_3-BaF_2 system the preparation of amorphous thin films were attempted using b-diketonates of Al(aa)_3 and Ba(tfa)_2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of AlF_3 alone, 80AlF_3・20BaF_2 and 60AlF_3・4BaF_2. The synthesis of an amorphous AlF_3 film also is the first time.
4. For the GaF_3-BaF_2 system the preparation of amorphous thin films were attempted using b-diketonates of Ga(aa)_3 and Ba(tfa)_2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of GaF_3 alone and 50GaF_3・50BaF_2. The synthesis of an amorpous GaF_3 film also is the first time.
5. The amorphous thin films synthesized in the ZnF_2-BaF_2, AlF_3-BaF_2 and GaF_3-BaF_2 systems were characterized by means of thin-film X-ray diffraction, IR absorption, atomic force microscope, thickness and refractive index.
6. It was proved that the developed ECR plasma-enhanced CVD technique is applicable in preparing amorphous thin films of fluoride systems.
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