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2003 Fiscal Year Final Research Report Summary

THEORETICAL STUDY ON DYNAMICS OF ATOMIC ARRANGEMENT AT STEPS

Research Project

Project/Area Number 13640326
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 固体物性Ⅰ(光物性・半導体・誘電体)
Research InstitutionUniversity of Yamanashi

Principal Investigator

KAWAMURA Takaaki  UNIVERSITY OF YAMANASHI, FAC. EDUCATION & HUMAN SCI., PROFESSOR, 教育人間科学部, 教授 (20111776)

Project Period (FY) 2001 – 2003
KeywordsSTEP DYNAAMICS / NANOSTRUCTURES / DECAY OF NANO-ISLAND / MONE CARLO SIMULATION / SILICON SURFACE / RHEED
Research Abstract

We have studied behavior of steps and effect of steps in growth and decay of islands on a surface using a kinetic Monte Carlo simulation. We have also developed a reflection high energy electron diffraction (RHEED) code which calculates a wave function in a crystal in order to analyze atomic structures around steps.
Our prime results are summarized as follows.
1)We reveal that surface diffusion is not a simple process. When an island on a terrace decays, an atom at a step of the island moves out of it, but it is quite rare for the atom to move directly to a step away from the island. An atom hopping from the terrace and the resulting atomic vacancy play an important role ; once it hops out of the terrace, there is no distinction between a diffusing atom from the island and the hop-up atom.
2)We reveal a change in a role of step during formation of an island on Si(100)-2 x1 terrace. A so-called Sb-type step acts as a drain of diffusing atoms before formation of an island but it acts as a source after starting the formation. The change of role promotes the island formation.
3)Decay of an island is interpreted as a process of decreasing the step length and total hopping rate of atoms. As the hopping rate of atom at step is higher than that on terrace, a step atom moves more frequently to reduce the number of step atoms.
4)We have shown that under surface resonance condition, a RHEED wave function is quite localized at the surface. The localization occurs as a result of multiple scattering of surface waves which propagate nearly parallel to the surface.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] T.Kawamura et al.: "Monte Carlo simulation of decay process of pyramidal islands formed on Si(100) surface"Surface Science. 493. 561-567 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kawamura, A.Ishii: "Monte Carlo simulation of recovery process after MBE growth on GaAs(100)"Surface Science. 493. 438-446 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Watanabe et al.: "Origin of the domain contrast on a Si(001)-2x1 surface imaged by secondary electrons"Applied Physics Letters. 78. 1255-1257 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kawamura et al.: "Decay of pyramidal nano-island formed on Si(100) studied by kinetic Monte Carlo simulation"Surface Science. 514. 60-67 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Fukamachi et al.: "Extinction effect and Borrmann effect of resonant dynamical scattering in the Bragg case"Acta Crystallographica. A58. 552-558 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Toyoshima et al.: "Surface Diffusion during Decay of 2-Dimensional Island on Si(100)"Japanese Journal of Applied Physics. 42・9. L1087-L1089 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Toyoshima, T.Kawamura: "Effect of Temperature Difference on Adatom Diffusion and Growth of Nano-island on Si(100) Surface"Japanese Journal of Applied Physics. 43・5. L595-L598 (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Kawamura, A.Ishii: "Monte Carlo simulation of recovery process after MBE growth on GaAs(100)"Surface Science. 493. 438-446 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kawamura, S.Toyoshima, A.Ichiiya: "Monte Carlo simulation of decay process of pyramidal islands formed on Si(100) surface"Surface Science. 493. 561-567 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Watanabe, M.Ichikawa, T.Kawamura: "Origin of the domain contrast on a Si(100)-2x1 surface imaged by secondary electrons"Applied Physics Letters. 78. 1255-1257 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Kawamura, S.Toyoshima, A.Ichimiya: "Decay of pyramidal nano-island formed on Si(100) studied by kinetic Monte Carlo simulation"Surface Science. 514. 60-67 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Fukamachi, R.Negishi, S.Zhou, M.Yoshizawa, T.Kawamura: "Extinction effect and Borrmann effect of resonant dynamical scattering in the Bragg case"Acta Cryst.. A58. 552-558 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Toyoshima, T.Kawamura, S.Nishida, A.Ichimiya: "Surface Diffusion during Decay of 2-Dimensional Island on Si(100)"Jpn.J.Appl.Phys.. 42-9. L1087-L1089 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Saori Toyoshima, Takaaki Kawamura: "Effect of Temperature Difference on Adatom Diffusion and Growth of Nano-island on Si(100) Surface"Jpn.J.Appl.Phys.. 43-5. L595-L598 (2004)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2005-04-19  

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