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2002 Fiscal Year Final Research Report Summary

Thermodynamic interactive database for vapor phase epitaxy using internet

Research Project

Project/Area Number 13650004
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOUKITU Akinori  Tokyo University of Agriculture and Technology, Faculty of Technology, Professor, 工学部, 教授 (10111626)

Co-Investigator(Kenkyū-buntansha) HAGIWARA Yoichi  General Information Media Center, Associate professor, 総合情報メディアセンター, 助教授 (40218392)
KUMAGAI Yoshinao  Faculty of Technology, Lecture, 工学部, 講師 (20313306)
Project Period (FY) 2001 – 2002
KeywordsInternet / Data base using calculation system / Web / Thermodynamic analysis / Vapor Phase Epitaxy / Compound Semiconductor / Vapor Phase Epitaxy
Research Abstract

Vapor phase epitaxy (VPE) including metalorganic vapor phase epitaxy (MOVPE) is a very important method for high-functional opto- and electronic- devices. VPE provides high quality epitaxial layers from vapor at low temperature. Group III nitrides and their alloys are promising materials for applications to short-wavelength light emitting devices. In particular, fabrication of InGaN-based heterostructures has been extensively studied for violet/blue laser diodes (LDs) by a large number of researchers. Especially, MOVPE is used generally for the epitaxial growth of these structures.
In this project, we have investigated a new thermodynamic analysis system for vapor phase epitaxy of the group III nitrides, GaN, InN, AIN, InGaN, AlGaN and AlInN, and the other III-V compound semiconductors such as InGaAsP, InAsAs, InGaP because the thermodynamic analysis of epitaxial growth system provides usefull information on the growth conditions. The new thermodynamic analysis system which we set up informs 〓vorable conditions for the growth through the internet web to any researchers who want to find out the best conditions.

  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] Yoshinao KUMAGAI: "Thick and high-quality GaN growth on GaAs(111) substrates for preparation of freestanding GaN"J.Ciyst.Growth. 246. 215-222 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Akinori KOUKITU: "Surface polarity dependence of decomposition and growth of GaN studied by in situ gravimetric monitoring"J.Cryst.Growth. 246. 230-236 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Akinori KOUKITU: "Influence of Temperature Ramping Rate on Thick GaN Growth on GaAs(111)A Surfaces"Phys.Stat.Sol.(c). 0. 166-169 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Hisashi MURAKAMI: "Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs(111)A and (111)B substrates"J.Ciyst.Growth. 247. 245-250 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yuriko MATSUO: "Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen"Jpn.J.Appl.Phys.. 42. 2578-2581 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Takehiro HASEGAWA: "A quadratic convergence method for MOVPE thermodynamic analysis"J.Cryst.Growth. 237-239. 1603-1609 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Yoshinao KUMAGAI: "Thick and high-quality GaN growth on GaAs(111) substrates for preparation of freestanding GaN"J. Cryst. Growth. 243. 215-222 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Akinori KOUKITU: "Surface polarity dependence of decomposition and growth of GaN studied by in situ gravimetric monitoring"J. Cryst. Growth. 246. 230-236 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Akinori KOUKITU: "Influence of Temperature Ramping Rate on Thick GaN Growth on GaAs (111 )A Surfaces"Phys. Stat. Sol. (c). 0. 166-169 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Hisashi MURAKAMI: "Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs(111)A and (111)B substrates"J. Cryst. Growth. 247. 245-250 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yuriko MATSUO: "Theoretical investigation of arsenic desorption from GaAs(001) surfaces under an atmosphere of hydrogen"Jpn. J. Appl. Phys.. 42. 2578-2581 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Takehiro HASEGAWA: "A quadratic convergence method for MOVPE thermodynamic analysis"J. Cryst. Growth. 237-239. 1603-1609 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yoshihiro KANGAWA: "Influence of lattice constraint from InN and GaN substrate on relationship between solid composition of In_xGa_<1-x>N film and input mole ratio during molecular bean epitaxy"Jpn. J. Appl. Phys.. 42. 95-98 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yoshihiro KANGAWA: "Thermodynamic study on compositional instability of InGaN/GaN and InGaN/InN during MBE"Appl. Surf. Sci.. in press. (2003)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2004-04-14  

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