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2002 Fiscal Year Final Research Report Summary

Formation of virtual substrates for strained SiGe heterostructures and its application to high mobility FETs

Research Project

Project/Area Number 13650007
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionUniversity of Yamanashi

Principal Investigator

NAKAGAWA Kiyokazu  University of Yamanashi, Faculty of Engineering, Professor, 工学部, 教授 (40324181)

Co-Investigator(Kenkyū-buntansha) SHIRAKI Yasuhiro  The University of Tokyo, Graduate School of Engineering, Professor, 大学院・工学系研究科, 教授 (00206286)
Project Period (FY) 2001 – 2002
KeywordsSiGe heterostructure / virtual substrate / high mobility / chemical mechanical polishing / ion implantation / strain relaxation
Research Abstract

We have developed a new technique to form fully relaxed SiGe buffer layers, for fabrication of strained SiGe heterostructure devices. This technique has utilized an ion implantation method. Extremely thin (~100nm) SiGe buffer layers with almost full strain relaxation were obtained by Ar ion implantation into Si substrates before SiGe growth. The amount of strain relaxation was found to depend on ion dose and implantation energy, indication that ion-implantation-induced defects play an important role in strain relaxation.

  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] K.Nakagawa et al.: "Reverse temperature dependence of Sb sticking on Si(100) surfaces"Material Science and Engineering B. 89巻. 238-240 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Sawano et al.: "Surface smoothing of SiGe strained-relaxed buffer layer by chemical mechanical polishing"Material Science and Engineering B. 89巻. 406-409 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Irisawa et al.: "Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures"Appl. Phys. Lett.. 81巻. 847-849 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Sawano et al.: "Mobility Enhancement in Strained Si Modulation-Doped Structures by Chemical Mechanical Polishing"Appl. Phys. Lett.. 82巻. 412-414 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Sawano et al.: "Planarization of SiGe Virtual Substrates by CMP and its Application to Strained Si Modulation-Doped Structures"J. Cryst. Growth. 251巻. 693-696 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Irisawa et al.: "Growth of SiGe/Ge/SiGe Heterostructures with Ultrahigh Hole Mobility and their Device Application"J. Cryst. Growth. 251巻. 670-675 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K. Sawano, K. Kawaguchi, T. Ueno, S. Koh, K. Nakagawa, Y. Shiraki: "Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing"Materials Science and Engineering B-Solid State Materials for Advanced Technology. 89. 406-409 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Nakagawa, S. Yamaguchi, N. Sugii, Y. Shiraki: "Reverse temperature dependence of Sb sticking on Si(100) surfaces"Materials Science and Engineering B-Solid State Materials for Advanced Technology. 89. 238-240 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Irisawa, S. Tokumitsu, T. Hattori, K. Nakagawa, S. Koh, Y. Shiraki: "Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures"Appl. Phys. Lett.. 81. 847-849 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Sawano, S. Koh, Y. Shiraki, Y. Hirose, T. Hattori, and K. Nakagawa: "Mobility Enhancement in Strained Si Modulation-Doped Structures by Chemical Mechanical Polishing"Appl. Phys. Lett.. 82. 412-414 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Sawano, K. Arimoto, Y. Hirose, S. Koh, N. Usami, K. Nakagawa, T. Hattori, and Y. Shiraki: "Planarization of SiGe Virtual Substrates by CMP and its Application to Strained Si Modulation-Doped Structures"J. Cryst. Growth. 251. 693-696 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Irisawa, S. Koh, K. Nakagawa, and Y. Shiraki: "Growth of SiGe/Ge/SiGe Heterostructures with Ultrahigh Hole Mobility and their Device Application"J. Cryst. Growth. 251. 670-675 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Sawano, Y. Hirose, S. Koh, K. Nakagawa, T. Hattori, and Y. Shiraki: "Relaxation Enhancement of SiGe Thin Layers by Ion Implantation into Si Substrates"J. Cryst. Growth. 251. 685-688 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S. Koh, K. Murata, T. Irisawa, K. Nakagawa, and Y. Shiraki: "Hole Transport Properties of B-Doped Relaxed SiGe Epitaxial Films Grown by Molecular Beam Epitaxy"J. Cryst. Growth. 251. 689-692 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Irisawa, M. Myronov, O. A. Myronov, E.H.C. Parker, K. Nakagawa, M. Murata, S. Koh, and Y. Shiraki: "Hole Density Dependence of Effective Mass, Mobility and Transport Time in Strained Ge Channel Modulation-Doped Heterostructures"Appl. Phys. Lett.. 82. 1425-1427 (2003)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2004-04-14  

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