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2002 Fiscal Year Final Research Report Summary

The growth of environmental semiconductor β-FeSi_2 films for light emitting devices and photo-detection devices

Research Project

Project/Area Number 13650020
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionMeiji University

Principal Investigator

UEKUSA Shinitiro  Meiji University, 理工学部, 教授 (10061970)

Project Period (FY) 2001 – 2002
KeywordsEnvironmental semiconductor / Nonpoisonous / Solar cell / Luminescence and photovoltaic component / OEIC / Silicon base / β-FeSi_2 / Pulsed Laser Deposition
Research Abstract

Orthorhombic the β-FeSi_2 is composed of nontoxic elements, which exist in great abundance on earth. The use of the β-FeSi_2 is expected in applications of thermoelectric devices, light emitting devices and photovoltaic cells. In this study, we attempted to grow the β-FeSi_2 thin film on Si substrate, using a pulsed laser deposition method (PLD), for investigating optical properties.
(1)The β-FeSi_2 thin films were not grown at room temperature and substrate temperature over 400 degrees made the β-FeSi_2 monocrystalline structure.
(2)The sample prepared on Si(111) substrate was a monocrystalline structure since only (202) or (220) signals of β-FeSi_2 were observed.
(3)Composition of produced β-FeSi_2 was Fe:Si=30:70. So as-deposition β-FeSi_2 was Si-rich.
(4)Iron was spread into Si substrate and the amount of diffusion was large at room temperature and 500 degrees.
(5)β-FeSi_2/Si interface prepared by 400 degrees was an ideal one-side step junction.
(6)When we used the annealing above 20 hours, the FWHM of β-FeSi_2 thin film was decreased about 50% and the crystalline recovery was observed. And β-FeSi_2 composition ratio was close to stoichiometry. And the band gap was increased.
(7)Iron and a lattice defect were made impurity level and were considered to operate as a killer center of luminescence.
(8)We found that the PL peaks from the β-FeSi_2 thin films on a Si substrate appear at 0.807eV for the samples annealed at 900℃ for 40h. The PL signal from the β-FeSi_2 thin film was observed using PLD for the first time to the best of our knowledge. And the PL peak of as-deposited sample is considered that Si defective peak ; and Si complex peak appeared.

  • Research Products

    (4 results)

All 2002 2001

All Journal Article (4 results)

  • [Journal Article] Composition of β-FeSi_2 Thin-Films Grown by a Pulsed Laser Deposition Method2002

    • Author(s)
      Shin-ichiro Uekusa et al.
    • Journal Title

      Materials Research Society Symposium Proceedings 744

      Pages: M5.38.1-M5.38.6

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Composition of β-FeSi_2 Thin-Films Grown by a Pulsed Laser Deposition Method2002

    • Author(s)
      S.Uekusa, M.Yamamoto, K.Tsuchiya, N.Miura
    • Journal Title

      Mat.Res.Soc.Symp.Proc Vol.744

      Pages: M5.38.1-M5.38.6

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] β-FeSi_2 thin-films grown by a pulsed laser deposition2001

    • Author(s)
      Shin-ichiro Uekusa et al.
    • Journal Title

      Materials Research Society Symposium Proceedings 648

      Pages: P6.34.1-P6.34.6

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] β-FeSi_2 thin-films grown by a pulsed laser deposition2001

    • Author(s)
      S.Uekusa, Y.Watanabe, Y.Aida, N.Miura
    • Journal Title

      Mat.Res.Soc.Symp.Proc Vol.648

      Pages: 6.34.1-6.34.6

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2006-07-11  

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