2002 Fiscal Year Final Research Report Summary
Study of co-doping of Ag and In in ZnS:N/GaAs layers prepared by vapor phase epitaxy
| Project/Area Number |
13650363
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kochi National College of Technology |
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Principal Investigator |
KISHIMOTO Seiichi Kochi National College of Technology, Electrical Engineering, Lecturer, 電気工学科, 助教授 (90177816)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAMOTO Tetsuya Kochi University of Technology, Electronic and Photonic Systems Engineering, Professor, 電子・光システム工学科, 教授 (30320120)
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| Project Period (FY) |
2001 – 2002
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| Keywords | zinc sulfide / co-doping / photoluminescence / nitrogen doping / vapor phase epitaxy |
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| Research Abstract |
Vapor-phase epitaxial ZnS:N/GaAs layers co-doped with In and Agriculture were investigated. Hall-effect measurements at room temperature revealed free hole concentrations and mobility values to be (0.6-1.4)x10^<19> cm^<-3> and 10-25 cm^2/Vs for ZnS:N, Agriculture, In layers, respectively. Almost temperature independent free hole concentrations of these layers indicate formation of impurity band. Concentrations of electrically active acceptor, donor, and neutral impurities were estimated from the temperature dependences of mobility values and hole concentrations. Appearance of the "Blue-Agriculture emission" and low resistive p-type conduction were compatible only for ZnS:N.Agriculture, In layers. Moreover, the photoluminescence spectra, which were influenced by the amount of NH_3 flow, were studied.
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