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2002 Fiscal Year Final Research Report Summary

Devices Employing Piezoelectric Boundary Waves for Integration with Semiconductor Circuitry

Research Project

Project/Area Number 13650371
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionCHIBA UNIVERSITY

Principal Investigator

YAMAGUCHI Masatsune  Chiba University, Dept. Elec. Mech. Eng., Professor, 工学部, 教授 (00009664)

Co-Investigator(Kenkyū-buntansha) OMORI Tatsuya  Chiba University, Dept. Elec. Mech. Eng., Research Associate, 工学部, 助手 (60302527)
HASHIMOTO Ken-ya  Chiba University, Dept. Elec. Mech. Eng., Associate Professor, 工学部, 助教授 (90134353)
Project Period (FY) 2001 – 2002
KeywordsSurface Acoustic Wave / Boundary Wave / SAW device / Piezoelectric Material / LiNbO_3 / Integration / Packaging / EB Lithography
Research Abstract

The authors reported that there exists a boundary wave at the interface between the highly piezo-electric LiNbO_3 substrate and the Si substrate, and the wave enables us to realize high performance analog signal processing function comparable to the conventional surface acoustic wave (SAW) devices. This research intended to develop boundary wave devices through the development of to the substrate bonding technology. In order to develop very fine electrode pattern needed for this device structure, use of the electron-beam (EB) lithography was studied. For the purpose, the lift-off method is effective in general. However, since LiNbO_3 substrate is insulator, the direct EB exposure causes the charge-up problem. So as to circumvent this difficulty, the authors developed new lift-off process based on the water-solvable anti-static coating. This process enables us to realize Al IDT pattern of 0.2 μm line widths. Then the boundary wave device with Si/LiNbO_3 structure was fabricated in the f … More ollowing step : (1) very fine IDT was developed on the LiNbO_3 substrate by the EB-based lift-off process. (2) the SiO_2 intermediate layer was deposited as an insulation layer by the RF sputtering method, and (3) the Si top layer was deposited by the electron beam evaporation. The response by the boundary wave was clearly observed at 2.09 GHz, though the device insertion was 20 dB increased by the Si layer deposition. In addition, use of the adhesive was also investigated for the fabrication of the boundary wave devices. First use of the UV resin was studied. Although the wave response was observed at 991 MHz, the attained insertion loss was rather large (30.8 dB). It includes the ohmic loss of about 10 dB due to the electrode routing, whereas the remaining is due to the absorption with in the resin. Then the use of the kovar glass was studied, and the adhesion of Si with LiNbO_3 was succeeded. Although the response could not be detected at this moment due to the thickness of the glass layer, it could be used for the realization of high performance boundary wade devices. Less

  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] R.Nakagawa, et al.: "Analysis of Excitation and Propagation Characteristics of Leaky Modes in SAW Waveguides"Proc.IEEE Ultrasonics Symposium. 405-409 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Hashimoto, et al.: "Design Considerations on Wideband Longitudinally-Coupled Double-Mode SAW Filters"Proc.IEEE Ultrasonics Symposium. 153-157 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Omori, et al.: "SAW Reflection Characteristics of Cu Electrodes and Their Application to SAW IF Devices"Proc.IEEE Ultrasonics Symposium. 19-23 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 橋本研也他: "IDTにおける内部反射を含むSAW共振子の動作に関する基礎的検討"電子情報通信学会技術研究報告US2002-49. 19-24 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 中川亮他: "SAW導波路における高次横モードの励振・伝搬特性"電子情報通信学会技術研究報告US2002-48. 13-18 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 小澤寛司他: "電子線直接露光法によるSAWデバイス作製に関する基礎的検討"第31回EMシンポジウム予稿集. 131-136 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] R. Nakagawa et al.: "Analysis of Excitation and Propagation Characteristics of Leaky Modes in SAW Waveguides"Proc. IEEE Ultrasonics Symposium. 405-409 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Hashimoto et al.: "Design Considerations on Wide-band Longitudinally-Coupled Double-Mode SAW Filters"Proc. IEEE Ultrasonics Symposium. 153-157 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Omori et al.: "SAW Reflection Characteristics of Cu Electrodes and Their Application to SAW IF Devices"Proc. IEEE Ultrasonics Symposium. 19-23 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Hashimoto et al.: "Design Considerations on Wide-band Longitudinally-Coupled Double-Mode SAW Filters"Meeting Report, IEICE. US2002-49. 19-24 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R. Nakagawa, et al.: "Analysis of Excitation and Propagation Characteristics of Leaky Modes in SAW Waveguides"Meeting Report, IEICE. US2002-48. 13-18 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Ozawa, et al.: "Study on SAW device fabrication by means of direct electron beam exposure"Proc. 31st EM Symposium. 131-136 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] R. Nakagawa et al.: "Analysis of Excitation and Propagation Characteristics of Leaky Modes in SAW Waveguides"Meeting Report, JSPS. No. 150 Committee. 79-84 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T. Omori et al.: "Preparation of PZT Micro-Discs and Their Piezoelectric Application to UHF-SHF Devices"Meeting Report, JSPS. No. 150 Committee. 85-88 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Hashimoto et al.: "Modelling of Shear-Horizontal-Type Surface Acoustic Waves and Its Application to COM-Based Device Simulation"Proc. IEEE Ultrasonics Symposium. 127-132 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hashimoto: "Simulation Technologies for RF SAW devices"Meeting Report, IEICE. MW2001-58. 1-8 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Hashimoto et al.: "Behaviour of SAW devices as a multi-port circuit"Convention Record, IEICE. 283-284 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K. Ozawa, et al.: "Study on SAW device fabrication by means of direct electron beam exposure"Meeting Report, IEICE. US2001-30. 37-42 (2001)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2004-04-14  

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