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2002 Fiscal Year Final Research Report Summary

Acceleration and inhibition effects on via filling electrodeposition were discussed

Research Project

Project/Area Number 13650781
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Material processing/treatments
Research InstitutionOKAYAMA UNIVERSITY

Principal Investigator

KONDO Kazuo  Department of Applied Chemistry, Ph.D., 工学部, 助教授 (50250478)

Project Period (FY) 2001 – 2002
KeywordsCOPPER CONCUCTOR / COPPER ELECTRODEPOSITION / ADDITIVES / INHIBITION EFFECT / ACCELERATION EFFECT / MECHANISM
Research Abstract

Acceleration and inhibition effects on via filling electrodeposition were discussed.
1.Acceleration effect
(1) Through mask electrode of electrode only at via bottom was used to measure the via bottom acceleration effects. The via bottom current increases with additives of Chloride(Cl^-), Polyethylen Glycol (PEG), Janus green B(JGB) and Bis(3-sulfopropyl) disulfide(SPS) if compared with Cl^-, PEG and JGB. With increasing via aspect ratio, the via bottom current also increases.
(2) The via bottom current also increases with narrower via opening size. The cross section of electrodeposits deposited on via bottom electrode was observed. These elctrodeposits are always flat and does not show the curvature even with the narrower via opening size which shows the acceleration effects. This contradicts with the adsorption model proposed by T.Moffat et. Al..
(3) This indicates that the free accelerator, not the adsorbed, shows the via bottom acceleration effect.
2.Inhibition effect
(1) Inhibition addi … More tives of PEG molecules was discussed next. The granular deposit shows higher FEAUGER peak intensity if compared with other flat areas. The PEG molecule is polymer containing oxygen and the granular deposits observed with the secondary electron image are the PEG molecules.
(2) The QCM substrates which has been pre deposited with copper was dipped into the PEG and Cl^- containing copper electrolytes. The differential frequency increases with the increase in the dipping time. With 200 second dipping time, numerous fine 10nm in diameter PEG molecules can be observed.
(3) The current shows constant and lower value of 4.3mA/cm^2 with the PEG and Cl^- containing copper electrolytes regardless of electrodepositiontime. With adding 1ppm of SPS, however, the current increased drastically. SPS has the acceleration effect of increasing current. Before adding 1ppm of SPS, the copper electrodeposit surface has numerous PEG molecules. However, no PEG molecules could be observed on the copper electrodeposit surface of 3000second and 5400sedond. The copper electrodeposits also show refinement of granular size to 100nm. The SPS additive has the PEG molecules removing and copper electrodeposit refinement effects.
*Three dimensional packaging technology is to stack the silicon chips in three dimensions. Through chip electrodes form on the silicon chips and these high aspect ratio vias are filled by copper electrodeposition. As an application of the research, we developed complete electrodeposition of these high aspect ratio vias. We achieved extremely short electrodeposition time of 2.5hrs. Less

  • Research Products

    (40 results)

All Other

All Publications (40 results)

  • [Publications] 近藤和夫, 山川統広, 田中善之助, 間野和美: "ビア充てんめっきの形状支配因子"エレクトロニクス実装学会誌(2001). VOl.4、No.1. 37-40 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Hayashi, K.Fukui, Z.Tanaka, K.Kondo: "Shape Evolution of Electrodeposited Bumps into Deep Cavities"Journal of Electrochemical Society. C145. 148-152 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Kondo, N.Yamakawa: "Role of Damascene via filling additives-II. Via bottom acceleration"ISTC 2001(Shiyan-haip)(2001). Vol.1. 532-537 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuo Kondo, Norio Yamakawa: "Role of Damascene Via Filling Additives-Via Bottom Acceleration"Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equiptments, Cheju Island, Korea. June 20-June 23. 241-243 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuo Kondo: "Fundamental Aspects of Electrodepositon -Zinc, Bumping and Via Filling"MPND2001,Kyoto. Sept.16-19. 107-110 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 岡村拓治, 田中善之助, 近藤和夫: "穴埋めっきにおける開口寸法の影響"第11回マイクロエレクトロニクスシンポジウム、阪大. 10月. 95-100 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuo Kondo: "Fundamental Aspects in Bumping and Via Filling Electrodeposition"2001 Int'l Symposium on Electronic Materials and Packaging, Jeju Island. Nov.. 69-72 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 近藤和夫: "実装プロセス工学の最新研究分野"ケミカルエンジニアリング. Vol.46,No12. 64-67 (2001)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuo Kondo, Takuji Okamura, Jian Jun Sun, Manabu Tomisaka, Hitoshi Yonemura, Masataka Hoshino, Kenji Takahashi: "High Aspect Ratio Copper Via Fill used for Three Dimensional Chip Stacking"2002 ICEP(Tokyo). 327-335 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuo Kondo: "Electrodeposition Technologies for Semiconductor and Semiconductor Packaging"ISMP 2002(Seoul). 98-103 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuo Kondo, Katsuhiko Hayashi, Zennosuke Tanaka, Norihiro Yamakawa: "Role of damascene via filling additives-morphology evolution"ECS Proc.. vol.2000-8. 76-81 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 近藤和夫, 田中善之助, 山川統広: "ピア穴埋めに用いるCuめっき添加剤のメカニズム 第2報-溝底の促進効果"エレクトロニクス実装学会誌. Vol5. 672-680 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Seungjin Oh, Kazuo Kondo: "High Aspect Ratio Copper Via Filling Used for Three Dimensional Packaging"The 3^<rd> Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equiptments, Hakone, Japan. 194-200 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 近藤和夫, 田中善之助, 岡村拓治: "穴埋めめっきに用いるCuめっき添加剤のメカニズム 第3報-開口寸法の影響"エレクトロニクス実装学会誌6. No2. 136-139 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuo Kondo: "Electrodeposition Technologies for Semiconductor and Semiconductor Packaging"Proc.,ISTC 2002(Tokyo). (in print).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Seung, Jin Oh, T.Yonezawa, K.Kondo, M.Tomisaka, H.Yonemura, M.Hoshino, Y.Taguchi, K.Tanahashi: "Copper Electroplating Applied to Fill High-Aspect-Ratio Vias for the Application of Three Dimensional Chip Stacking"2003 ICEP(Tokyo). April 16-18(in print).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Kondo, N.Yamakawa, Z.Tanaka, K.Hayashi: "Copper Damascene Electrodeposition and Additives"Journal of Analytical Electrochemistry. (in print).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] J-J Sun, Kazuo Kondo, T.Okamura, S-J Oh, M.Tomisaka, H.Yonemura, M.Hoshino, K.Takahashi: "High Aspect Ratio Copper Via Filling Used for Three Dimensional Chip Stacking"ECS. (in print).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] 近藤和夫, 岡村拓治, 呉承真, 米澤稔浩, 富坂学, 米村均, 星野正孝, 田口由一, 高橋健二: "三次元実装に用いる高アスペクト比貫通電極の銅穴埋めっき"エレクトロニクス実装学会. (in print).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Kondo, D.P.Barkey, J.C.Bradley, F.Argoul: "Proceedings Volume of 199^<th> ECS Meeting Electrochemical Society, (2001)"MORPHOLOGICAL EVOLUTION OF ELECTRODEPOSITS (in print).

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Kazuo Kondo, Lili Deligianni: "Future Targets of Electrodeposition Technologies"Electronics Division, Ch.E.Japan(2002). 12 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Kondo, N.Yamakawa, Z.Tanaka, K.Mano: "Shape evolution factors for via filling electrodeposition"JIEP. Vol.4, No.1. 37-40 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hayashi, K.Fukui, Z.Tanaka and K.Kondo: "Shape Evolution of Electrodeposited Bumps into Deep Cavities"Journal of Electrochemical Society. C145. 148-152 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Kondo and N.Yamakawa: "Role of Damascene via filling additives-II. Via bottom acceleration"ISTC 2001(Shiyan - haip). Vol.1. 532-537 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuo Kondo and Norio Yamakawa: "Role of Damascen Via Filling Additives - Via Bottom Acceleration"Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments. Cheju Island, Korea, June 20 - 23. 241-243 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuo Kondo: "Fundamental Aspects of Electrodeposition - Zinc, Bumping and Via Filling"MPND2001(Kyoto). Sept.16-19. 107-110 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Okamura, Z.Tanaka, K.Kondo: "Effects of opening size for via filling electrodeposition"The 11^<th> Microelectronics Symposium (Osaka Univ.). Oct.. 95-100 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuo Kondo: "Fundamental Aspects in Bumping and Via Filling Electrodeposition"2001 Int'l Symposium on Electronic Materials and Packaging. Jeju Island, Nov.. 69-72 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuo Kondo: "Recent research field in electrodeposition packaging"Chemical Engineering. Vol46, No12. 64-67 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuo Kondo, Takuji Okamura, Jian Jun Sun, Manabu Tomisaka, Hitoshi Yonemura, Masataka Hoshino and Kenji Takahashi: "High Aspect Ratio Copper Via Fill used for Three Dimensional Chip Stacking"2002ICEP (Tokyo). 327-335 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuo Kondo: "Electrodeposition Technologies for Semiconductor and Semiconductor Packaging"ISMP2002 (Seoul). 98-103 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuo Kondo, Katsuhiko Hayashi, Zennosuke Tanaka and Norihiro famakawa: "Role of damascene via filling additives- morphology evolution"ECS Proc.. Vol.2000-8. 76-81 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Kondo, Z.Tanaka, N.Yamakawa: "Copper etectrodeposition mechanism for via filling - 2. Acceleration effect at via bottom"JIEP. Vol.5. 672-68 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Seungjin Oh and Kazuo Kondo: "High Aspect Ratio Copper Via Filing Used for Three Dimensional Packaging"The 3^<rd> Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments. Hakone, Japan. 194-200 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Kondo, Z.Tanaka, T.Okamura: "Copper electrodeposition mechanism for via filling - 3. Effects of opening size"JIEP. vol.6, No2. 136-139 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kazuo Kondo: "Electrodeposition Technologies for Semiconductor and Semiconductor Packaging"Proc., ISTC2002 (Tokyo). [In Print].

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Seung.Jin Oh, T.Yonezawa, K.Kondo, M.Tomisaka, H.Yonemura, M.Hoshino, Y.Taguchi and K.Tanahashi: "Copper Electroplating Applied to Fill High-Aspect-Ratio Vias for the Application of Three Dimensional Chip Stacking"2003ICEP(Tokyo). April 16-18 [In Print].

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Kondo, N.Yamakawa, Z.Tanaka and K.Hayashi: "Copper Damascene Electrodeposition and Additives"Journal of Analytical Electrochemistry. [In Print].

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] J-J Sun, Kazuo Kondo, T.Okamura, S-J Oh, M.Tomisaka, H.Yonemura, M.Hoshino and K.Takahashi: "High Aspect Ratio Copper Via Filling Used for Three Dimensional Chip Stacking"ECS. [In Print].

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Kondo, T.Okamura, S-J Oh, T.Yonezawa, M.Tomisaka, H.Yonemura, M.Hoshino, Y.Taguchi, K.Takahashi: "Via filling electrodeposition used for the high aspect ratio through electrode of three dimensional packaging"JIEP. [In Print].

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2004-04-14  

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