2002 Fiscal Year Final Research Report Summary
Formation of Nanostructured Si-Ge alloy Thin Film Using an Organometallic Polymer as a precursor and the Optical and Electrical Properties
| Project/Area Number |
13650942
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
高分子構造・物性(含繊維)
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| Research Institution | Tohoku University |
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Principal Investigator |
WATANABE Akira Institute of M******* Research for Advanced Materials, Tohoku University, Associate Professor, 多元物質科学研究所, 助教授 (40182901)
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| Project Period (FY) |
2001 – 2002
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| Keywords | organometaric polymer / precursor / Si-Ge alloy / nanostructure |
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| Research Abstract |
In this study, our purpose is the formation of the nanostructured silicon-germanium (Si-Ge) alloy films using organosilicon and germanium nanocluster as precursors. Such Si-Ge alloy films are expected to show unique optical and electrical properties owing to the nanostructure. The organosilicon and germanium nanoclusters are organometallic polymers which have a Si and Ge duster core substituted with organic groups, respectively, and the organic groups give them the solubility to common organic solvents. The layered film consisting of organosilicon and organogermanium nanocluster can be prepared by spin-coating technique due to the solubility. The block copolymerization of organosilicon and organogermanium monomers also gave the nanostrucured Si-Ge alloy polymers. The Raman spectra of them shows characteristic bands assigned to the vibrations of Si-Si, Si- Ge and Ge-Ge bonds. The compositions of the Si-Ge copolymers corresponded to the monomer feed compositions of organosilicon and Orga
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nogermanium monomers. Inorganic thin films of Si-Ge alloys were prepared by the combination of organosilicon nanocluster, organogermanium nanocluster and Si-Ge block copolymers. The conversion of the organometalic polymers into inorganic films were carried out by using laser-induced pyrolysis technique. The organogermanium nanocluster film was easily converted into microcryatalline Ge (μc-Ge) film by the irradiation of an Ar ion laser, where laser beam was focused on the precursor film by using an objective lens. The laser beam scan using x-y-z stage controller gave a micropattern of μc-Ge with a resolution of ca.1μm. On the other hand, the formation of inorganic film from the organosiliconl nanocluster needs the irradiation of a pulsed laser which have larger energy density. The formation of Si-Ge alloy film with a nanostructure can be achieved by the laser-induced pyrolysis of the layered film of organosilicon and organogermanium nanoclusters. /organosilicon nanocluster layered film providers a novel method to form a Si-Ge alloy. Less
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