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2005 Fiscal Year Final Research Report Summary

Properties of nano-scale artificial structures of magnetic semiconductors and search for new functionalities

Research Project

Project/Area Number 14076205
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionUniversity of Tsukuba

Principal Investigator

TAKITA Koki  University of Tsukuba, Graduate School of Pure and Applied Siences, Professcr, 大学院数理物質科学研究科, 教授 (00011213)

Co-Investigator(Kenkyū-buntansha) OZAKI Nobuhiko  University of Tsukuba, Graduate School of Pure and Applied Sciences, Lecturer, 大学院数理物質科学研究科, 講師 (30344873)
KURODA Shinji  University of Tsukuba, Graduate School of Pure and Applied Sciences, Associat Professor, 大学院数理物質科学研究科, 助教授 (40221949)
Project Period (FY) 2002 – 2005
KeywordsSpintronics / Ferromagnetic semiconductors / Molecular beam epitax / Carrier doping / Clusters / Self-organized dots
Research Abstract

In this research project, we have been engaged in the exploitation of novel semiconducting materials exhibiting ferromagnetism at room temperature, which are considered to be indispensable for future spintronics utilizing spin degree of freedom of electrons. We have studied (Zn,Cr)Te, which has been attracting attention as o ne of the candidates of intrinsic room-temperature ferromagnetic semiconductors. Specifically, we have investigated how the magnetic properties are altered by co-doping of charge impurities of both p-type and n-type, aiming at the elucidation of the origin of ferromagnetism and the device application. As a result, we have found that the ferromagnetism of (Zn,Cr)Te is suppressed due to the co-doping of nitrogen as a p-type dopant while the ferromagnetism is significantly enhanced due to the co-doping of iodine as an n-type dopant. The structural and chemical analyses using transmission electron microscope (TEM) and energy-dispersive X-ray spectroscopy (EDS) have revealed that the Cr distribution in the grown films is modified due to the co-doping ; the Cr distribution in the iodine-doped films is strongly inhomogeneous, with the formation of Cr-rich regions of a typical size of 30〜50 nm, while the Cr distribution in the undoped and nitrogen-doped films is almost homogeneous. These results indicate that an significant increase of ferromagnetic transition temperature Tc in the iodine-doped (Zn,Cr)Te is caused by the formation of ferromagnetic clusters containing high Cr contents. As an origin of different homogeneities of the Cr distribution depending on the co-doping, we propose a model that the change in Cr valence due to the co-doping of charge impurities affects the attractive interaction between Cr ions, resulting in the formation of Cr-rich clusters.

  • Research Products

    (13 results)

All 2006 2005

All Journal Article (12 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Significant enhancement of ferromagnetism in Zn_<1-χ>Cr_χTe doped with iodine as an n-type dopant2006

    • Author(s)
      N.Ozaki et al.
    • Journal Title

      Physical Review Letters 97

      Pages: 037201,1-4

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Magneto-optical spectroscopy of (Ga, Mn)N epilayers2006

    • Author(s)
      S.Marcet et al.
    • Journal Title

      Physical Review B 74

      Pages: 125201,1-11

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Significant enhancement of ferromagnetism in Zn i..ГrxTe doped with iodine as an n-type dopant2006

    • Author(s)
      N.Ozaldetal.
    • Journal Title

      Physical Review Letters 97

      Pages: 037201, 1-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Magneto-optical spectroscopy of (Ga,Mn)N epilayer s2006

    • Author(s)
      S.Marc et al.
    • Journal Title

      Physical Review B 74

      Pages: 125201,1-11

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Magnetic behaviors of ferromagnetic semiconductor Zn_<1-χ>Cr_χTe grown by MBE2005

    • Author(s)
      N.Ozaki et al.
    • Journal Title

      Journal of Superconductivity : Incorporating Novel Magnetism 18

      Pages: 29-32

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] X-ray absorption near-edge structure and valence state of Mn in (Ga, Mn)N2005

    • Author(s)
      A.Titov et al.
    • Journal Title

      Physical Review B 72

      Pages: 115209,1-7

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Suppression of ferromagnetism due to hole doping in Zn_<1-χ>Cr_χTe grown by molecular beam epitaxy2005

    • Author(s)
      N.Ozaki et al.
    • Journal Title

      Applied Physics Letters 87

      Pages: 192116,1-3

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth and magnetic properties of novel ferromagnetic semiconductor (Zn, Cr)Te2005

    • Author(s)
      S.Kuroda et al.
    • Journal Title

      Science and Technology of Advanced Materials 6

      Pages: 558-564

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Magnetic behaviors of ferromagnetic semiconductor Zn i_xCrxTe grown by MBE2005

    • Author(s)
      N.Ozaki etal.
    • Journal Title

      Journal of Superconductivity : Incorporating Novel Magnetism 18

      Pages: 29-32

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] X-ray absorption near-edge structure and valence state of Mn in (Ga,Mn)N2005

    • Author(s)
      A.Titov etal.
    • Journal Title

      Physical Review B 72

      Pages: 115209,1-7

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Suppression of ferromagnetism due to hole doping in Zn i_xCrxTe grown by molecular beam epitaxy2005

    • Author(s)
      N.Ozaid etal.
    • Journal Title

      Applied Physics Letters 87

      Pages: 192116, 1-3

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth and magnetic properties of novel ferromagnetic semiconductor (Zn,Cr)Te2005

    • Author(s)
      S.Kuroda et al.
    • Journal Title

      Science and Technology of Advanced Materials 6

      Pages: 558-564

    • Description
      「研究成果報告書概要(欧文)」より
  • [Patent(Industrial Property Rights)] 荷電制御強磁性半導体2005

    • Inventor(s)
      黒田 眞司他
    • Industrial Property Rights Holder
      筑波大学
    • Industrial Property Number
      特許公開 2006-261353
    • Filing Date
      2005-03-16
    • Description
      「研究成果報告書概要(和文)」より

URL: 

Published: 2008-05-27  

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