2006 Fiscal Year Final Research Report Summary
Novel Field Effect Transistors using the Interface between Ferromagnetic-Ferroelectrics and Si based Magnetic Semiconductors
| Project/Area Number |
14102021
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
FUJIMURA Norifumi Osaka Prefecture University, Graduate School of Engineering, Professor, 工学研究科, 教授 (50199361)
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| Co-Investigator(Kenkyū-buntansha) |
MATSUI Toshiyuki Osaka Prefecture University, Graduate School of Engineering, Associate Professor, 工学研究科, 助教授 (20219372)
ASHIDA Atsushi Osaka Prefecture University, Graduate School of Engineering, Assistant Professor, 工学研究科, 講師 (60231908)
YOSHIMURA Takeshi Osaka Prefecture University, Graduate School of Engineering, Instructor, 工学研究科, 助手 (30405344)
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| Project Period (FY) |
2002 – 2006
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| Keywords | Ferroelectric-Ferromagnet / YMnO_3 / Ferroelectric-gate-transistor / Dielectric-Magnetic cross correlation / Depolarization field / Electric field spintronics device / Si:Ce diluted magnetic semiconductor / Spintronics |
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| Research Abstract |
The objective of this research is to create a multiferroic field effect transistors (FET). Novel physics on Si based diluted magnetic semiconductors (DMS) and magnetic ferroelectric have been recognizeded. Finally we are succeeded in proposing three types of prototype of multiferroic FET using magnetic-ferroelectric/DMS interface. Although the operation of final devices was not able to realize, regarding the large number of fundamental physics have been revealed and they were reported as 41 papers. Regarding cross correlation between dielectric and magnetic occurred in YMnO_3epitaxial films, it was found that there are-anomalous at around Neel point in the Ec of ferroelectric domain switching and dielectric constant. It is also recognized that the ferroelectric domain switching is suppressed by the formation of antiferromagnetic ordering. Moreover, we have revealed that change in the dielectric constant dropped at the Neel point. From the experiments using Raman scattering, there exists a spin-phonon coupling below Neel point. These results were published in Phil. Mag. Lett. as an invited paper. We have also proposed the use of exchange bias effect and spin filtering effect for the novel multiferroic devices using YbMnO_3 which we reported as ferroelectric ferromagnet.
Based on above fundamental physics, we arrived at the conviction that three types of multiferroic FET, which we have proposed are one of the promising spintronics devices using multiple dipole interaction between "interaction between magnetic and ferroelectric domains" and "magnetic interaction in DMS".
We also proposed that the use of polar semiconductor as a channel layer in this device is quite effective for device operation due to the interaction between two polarizations.
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