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2005 Fiscal Year Final Research Report Summary

Semiconductor-baaed magneto-photonic crystals and their applications

Research Project

Project/Area Number 14205003
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionThe University of Tokyo

Principal Investigator

TANAKA Masaaki  University of Tokyo, Graduate School of Engineering, Professor, 大学院工学系研究科, 教授 (30192636)

Co-Investigator(Kenkyū-buntansha) SUGAHARA Satoshi  University of Tokyo, Graduate School of Frontier Sciences, Research Associate, 大学院新領域創成科学研究科, 助手 (40282842)
Project Period (FY) 2002 – 2005
Keywordssemiconductor magneto-photonic crystals / spin / magneto-optical effect / MnAs / GaMnAs / InGaMnAs / tunneling magnetoresistance / waveguide-type optical isolator
Research Abstract

We have successfully grown a new quaternary alloy magnetic semiconductor (InGaMn)As, and have found that it is ferromagnetic with T_c〜130K. In (InGaMn)As, the lattice constant and the bandgap can be changed, and it can be grown on lattice-matched InP substrates, thus having good compatibility with optical communication devices. More recently, we have realized high T_c of 172-250K in Mn-delta-doped GaAs/p-AlGaAs heterostructures, which are the highest values ever reported in III-V based materials. Recently, we find out the giant planar Hall effect in Mn-delta-doped GaAs/p-AlGaAs heterostructures and clarified the magnetic anisotropy. Such new magnetic quantum heterostructures are very attractive in view of fundamental research as well as potential applications to "spintronics".
Recently, we observed negative TMR and oscillations of the TMR ratio (with varying the AlAs thickness) in GaMnAs/AlAs/InGaAs/AlAs/GaMnAs double-barrier ferromagnetic tunnel junctions, for the first time in magneti … More c semiconductor systems. This is caused by the appearance of resonant tunneling and TMR effects at the same time. Realization of such large spin-dependent tunneling in semiconductor heterostructures, that is spin injection from one semiconductor layer to another semiconductor layer via tunneling, is an very significant step towards future spintronics, in which one tries to use the spin degree of freedom in semiconductor devices.
We have fabricated ferromagnet(MnAs)/III-V semiconductor(GaAs) granular structures, hereafter GaAs : MnAs, by annealing (GaMn)As at 500-800℃. During the annealing process, MnAs ferromagnetic clusters with diameters of a few nm were formed in a matrix of GaAs (or GaMnAs), exhibiting a superparamagnetic behavior. We have established the fabrication process and have measured magneto-optic properties. Furthermore, we have fabricated GaAs:MnAs sandwiched by GaAs/AlAs distributed Bragg Reflectors (DBRs), and have showed significant enhancement of magneto-optical effect by using multiple interference and localization of light in the GaAs:MnAs magnetic layer. This structure offers new opportunity for the application to spin-controlled photonic devices based on III-V compound semiconductors. Recently, we have found extremely large positive magnetoresistance of 600 % at room temperature in the GaAs:MnAs granular structures, and further investigations are underway. Less

  • Research Products

    (22 results)

All 2006 2005 2004 2003 2002

All Journal Article (22 results)

  • [Journal Article] Growth and magnetic properties of epitaxial MnAs thin films grown on InP (001)2006

    • Author(s)
      M.Yokoyama, S.Ohya, M.Tanaka
    • Journal Title

      Applied Physics Letters 88

      Pages: 012504

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth and magnetic properties of epitaxial MnAs thin films grown on InP(001)2006

    • Author(s)
      M.Yokoyama, S.Ohya, M.Tanaka
    • Journal Title

      Appl.Phys.Lett. 88

      Pages: 012504

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Large magnetoresistance(>600%) of a GaAs : MnAs granular thin film at room temperature2006

    • Author(s)
      M.Yokoyama, T.Ogawa, A.M.Nazmul, M.Tanaka
    • Journal Title

      J.Appl.Phys. 99

      Pages: 08D502

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Zinc-Blende-type MnAs nanoclusters embedded in GaAs2005

    • Author(s)
      M.Yokoyama, H.Yamaguchi, T.Ogawa, M.Tanaka
    • Journal Title

      Journal of Applied Physics 97

      Pages: 10D317

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Physical Review Letters 95

      Pages: 17201

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Tunneling magnetoresistance in GaMnAs/AlAs/InGaAs/AlAs/ GaMnAs double-barrier magnetic tunnel junctions2005

    • Author(s)
      S.Ohya, P-N.Hai, M.Tanaka
    • Journal Title

      Applied Physics Letters 87

      Pages: 012105

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-doped Ge Thin Film2005

    • Author(s)
      S.Sugahara, K.L.Lee, S.Yada, M.Tanaka
    • Journal Title

      Japanese Journal of Applied Physics (Express Letter) 44

      Pages: L1426

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Virtual Journal of Nanoscale Science & Technology Vol.12, No.2

      Pages: http://www.vjnano.org.

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Spintronics : Recent Progress and Tomorrow's Challenges2005

    • Author(s)
      M.Tanaka
    • Journal Title

      J.Crystal Growth 278(Invited paper)

      Pages: 25-37

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Zinc-Blende-type MnAs nanoclusters embedded in GaAs2005

    • Author(s)
      M.Yokoyama, H.Yamaguchi, T.Ogawa, M.Tanaka
    • Journal Title

      J.Appl.Phys. 97

      Pages: 10D317

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Phys.Rev.Lett. 95

      Pages: 17201 1-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Electrical and optical control of ferromagnetism in III-V semiconductor heterostructures at high temperature (〜100K)2004

    • Author(s)
      A.M.Nazmul, S.Kobayashi, S.Sugahara, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys. 43

      Pages: L233- L236

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Photo-induced anomalous Hall effect in GaAs : MnAs granular films2004

    • Author(s)
      T.Ogawa, Y.Shuto, K.Ueda, M.Tanaka
    • Journal Title

      Physica E21

      Pages: 1041-1045

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Compensation Mechanisms in Low-temperature Grown GaMnAs Investigated by Scanning Tunneling Microscopy2003

    • Author(s)
      G.Mahieu, P.Condette, B.Grandidier, J.P.Nys, G.Allan, D.Stievenard, Ph.Evert, H.Shimizu, M.Tanaka
    • Journal Title

      Appl.Phys.Lett. 82

      Pages: 712-714

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] GaAs/AlAs DBRとMnAsナノクラスターを含む半導体積層構造の設計及び磁気光学物性2003

    • Author(s)
      上田和彦, 清水大雅, 田中雅明
    • Journal Title

      日本応用磁気学会誌 Vol.27

      Pages: 273-276

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Ferromagnetism and High Curie Temperature in Semiconductor Heterostructures with Mn-delta-doped GaAs and p-type Selective Doping2003

    • Author(s)
      A.M.Nazmul, S.Sugahara, M.Tanaka
    • Journal Title

      Phys.Rev. B67

      Pages: 241308(R) 1-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Magneto-Optical Kerr Effect of Semiconductor-based Multilayer Structures Containing a GaAs : MnAs Granular Thin Film2003

    • Author(s)
      K.Ueda, H.Shimizu, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys. 42

      Pages: L914-L917

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Magnetic properties of heavily Mn-doped quaternary alloy magnetic semiconductor (InGaMn)As grown on InP2003

    • Author(s)
      S.Ohya, H.Kobayashi, M.Tanaka
    • Journal Title

      Appl.Phys.Lett. 83

      Pages: 2175-2177

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Ferromagnet (MnAs)/III-V Semiconductor Hybrid Structures2002

    • Author(s)
      M.Tanaka
    • Journal Title

      Special Issue on Semiconductor Spintronics, Semiconductor Science and Technology 17,No.4(Invited paper)

      Pages: 327-341

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Quantum size effect and ferromagnetic ordering in ultrathin GaMnAs/AlAs heterostructures2002

    • Author(s)
      H.Shimizu, M.Tanaka
    • Journal Title

      J.Appl.Phys. 91

      Pages: 7487-7489

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Magneto-optical properties of a Si-doped GaAs : MnAs based magneto-photonic crystal operating at 1.55 micron2002

    • Author(s)
      H.Shimizu, M.Tanaka
    • Journal Title

      Physica E13

      Pages: 597-601

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Design of semiconductor-waveguide-type optical isolators using the non-reciprocal loss/gain in the magneto-optical waveguides having MnAs nanoclusters2002

    • Author(s)
      H.Shimizu, M.Tanaka
    • Journal Title

      Appl.Phys.Lett. 81

      Pages: 5246-5248

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2008-05-27  

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