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2004 Fiscal Year Final Research Report Summary

Development of ultraviolet bright light-emitting diodes using quaternary InAlGaN

Research Project

Project/Area Number 14205006
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionRIKEN

Principal Investigator

HIRAYAMA Hideki  RIKEN, Advanced Devices Laboratory, Senior Research Scientist, 石橋極微デバイス工学研究室, 先任研究員 (70270593)

Project Period (FY) 2002 – 2004
KeywordsQuaternary InAlGaN / Wide bandgap / MOCVD / In segregation / UV-LEDs / Threading dislocation density / Optical properties / Photoluminescence
Research Abstract

The demands for high-intensity ultraviolet(UV) laser diodes(LDs) and light-emitting diodes(LEDs) are increasing in the fields of high-density optical storage or high-efficiency lighting or biochemical and medical fields. GaN and III-nitride compound semiconductors are attracting considerable attention as candidate materials for the realization of UV-LDs and LEDs. The purpose of our work is to develop high-intensity UV-LEDs or LDs operating in the 250-350 nm wavelength range.
We have demonstrated high-efficiency UV emission from quaternary InAlGaN-based quantum wells(QWs) in the wavelength range between 290-375 nm at room temperature(RT) using the In-segregation effect. Emission fluctuations in the submicron region due to In-segregation were clearly observed for quaternary InAlGaN epitaxial layers. An internal quantum efficiency as high as 15% was estimated for a quaternary InAlGaN-based single quantum well(SQW) at RT. Such high efficiency UV emission can even be obtained on high threading-dislocation density buffers. We fabricated 310 nm-band deep UV light-emitting diodes(LEDs) with quaternary InAlGaN active regions. We achieved sub-milliwatt output power under RT pulsed operation for 308-314 nm LEDs. We also demonstrated a high output power of 7.4 mW from a 352 nm quaternary InAlGaN-based LED fabricated on a GaN substrate under RT CW operation. The maximum external quantum efficiency(EQE) of the 352 nm InAlGaN-based LED was 1.1%, which is the highest EQE ever obtained for 350 nm-band UV LEDs with top-emission geometry. From these results, the advantages of the use of quaternary InAlGaN for 300-350nm-band UV emitters was revealed.

  • Research Products

    (49 results)

All 2005 2004 2003 2002

All Journal Article (43 results) Book (2 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes2005

    • Author(s)
      H.Hirayama
    • Journal Title

      J.Appl.Phys. 97

      Pages: 091101-1-091101-19

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High-efficiency 350 nm-band quaternary InAlGaN- based UV-LED on GaN/sapphire template2005

    • Author(s)
      H.Hirayama
    • Journal Title

      Phys.Stat.Sol.(c) 2

      Pages: 2899-2902

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Significant improvements of quantum efficiencies of quaternary InAlGaN UV-LEDs on GaN substrates2005

    • Author(s)
      T.Kyono
    • Journal Title

      Phys.Stat.Sol.(c) 2

      Pages: 2912-2915

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Effects of GaN Substrates on InAlGaN Quaternary UV LEDs2005

    • Author(s)
      K.Akita
    • Journal Title

      Phys.Stat.Sol.(a) 201

      Pages: 2624-2627

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] 窒化物4元混晶を用いた高効率紫外LED2005

    • Author(s)
      平山秀樹
    • Journal Title

      電気学会論文誌C 125

      Pages: 160-168

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High-efficiency 350 nm-band quaternary InAlGaN- based UV-LED on GaN/sapphire template2005

    • Author(s)
      H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
    • Journal Title

      Phys.Stat.Sol.(c) 2, 7

      Pages: 2899-2902

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Significant improvements of quantum efficiencies of quaternary InAlGaN UV-LEDs on GaN substrates2005

    • Author(s)
      T.Kyono, H.Hirayama, K.Akita, T.Nakamura, K.Ishibashi
    • Journal Title

      Phys.Stat.Sol.(c) 2, 7

      Pages: 2912-2915

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High-Efficiency UV-LEDs using Quaternary InAlGaN2005

    • Author(s)
      H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
    • Journal Title

      IEEJ, Trans.EIS vol.125, no.2

      Pages: 160-168

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates2004

    • Author(s)
      H.Hirayama
    • Journal Title

      Jpn.J.Appl.Phys 43

      Pages: L1241-L1243

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Advantage of GaN substrates in InAlGaN quaternary ultraviolet-light-emitting diodes2004

    • Author(s)
      K.Akita
    • Journal Title

      Jpn.J.Appl.Phys 43

      Pages: 8030-8031

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004

    • Author(s)
      H.Hirayama
    • Journal Title

      Phys.Stat.Sol.(a) 201

      Pages: 2639-2643

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs2004

    • Author(s)
      T.Obata
    • Journal Title

      Phys.Stat.Sol.(a) 201

      Pages: 2803-2807

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004

    • Author(s)
      H.Hirayama
    • Journal Title

      Proc.SPIE Int.Soc.Opt.Eng. 5359

      Pages: 422-433

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures2004

    • Author(s)
      S.Anceau
    • Journal Title

      Phys.Stat.Sol.(a) 201

      Pages: 190-194

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2004

    • Author(s)
      平山秀樹
    • Journal Title

      レーザー研究 32

      Pages: 402-409

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] 紫外LEDにおけるGaN基板の効果2004

    • Author(s)
      秋田勝史
    • Journal Title

      SEIテクニカルレビュー 165

      Pages: 75-80

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates2004

    • Author(s)
      H.Hirayama, K.Akita, T.Kyono, T.Nakamura, K.Ishibashi
    • Journal Title

      Jpn.J.Appl.Phys. 43, 10A

      Pages: L1241-L1243

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Advantage of GaN substrates in InAlGaN quaternary ultraviolet-light-emitting diodes2004

    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      Jpn.J.Appl.Phys. 43, 12

      Pages: 8030-8031

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004

    • Author(s)
      H.Hirayama, K.Akita, T.Kyono, T.Nakamura
    • Journal Title

      Phys.Stat.Sol.(a) 201, 12

      Pages: 2639-2643

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effects of GaN Substrates on InAlGaN Quaternary UV LEDs2004

    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      Phys.Stat.Sol.(a) 201, 12

      Pages: 2624-2627

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs2004

    • Author(s)
      T.Obata, H.Hirayama, Y.Aoyagi, K.Ishibashi
    • Journal Title

      Phys.Stat.Sol.(a) 201, 12

      Pages: 2803-2807

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004

    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      Proc.SPIE Int.Soc.Opt.Eng. 5359

      Pages: 422-433

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures2004

    • Author(s)
      S.Anceau, P.Lefebvre, T.Suski, S.P.Lepkowski, H.Teisseyre, L.H.Dmowski, L.Konczewicz, A.Kaminska, A.Suchocki, H.Hirayama, Y.Aoyagi
    • Journal Title

      Phys.Stat.Sol.(a) vol.201, no.2

      Pages: 190-194

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Short Wavelength and High- Efficiency Operation of Deep UV LED Using Quaternary InAlGaN2004

    • Author(s)
      H.Hirayama, K.Akita, T.Kyono, T.Nakamura, Y.Aoyagi
    • Journal Title

      The Review of Laser Engineering, Special Issue on Present Status and Future Prospect of Ultraviolet LEDs and LDs Based on Nitride Semiconductors Vol.32, no.6

      Pages: 402-409

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Effects of GaN Substrate in Ultraviolet Light-Emitting Diodes2004

    • Author(s)
      K.Akita, T.Nakamura, H.Hirayama
    • Journal Title

      SEI Technical Review Vol.165

      Pages: 75-80

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Determination of Built-in Electric Fields in Quaternary InAlGaN Heterostructure2003

    • Author(s)
      H.Teisseyre
    • Journal Title

      Appl.Phys.Letters 82

      Pages: 1541-1543

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2003

    • Author(s)
      平山秀樹
    • Journal Title

      電子情報通信学会技術研究報告 103

      Pages: 13-18

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Determination of Built-in Electric Fields in Quaternary InAlGaN Heterostructures2003

    • Author(s)
      H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
    • Journal Title

      Appl.Phys.Letters vol.82, no.10

      Pages: 1541-1543

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Recent Progress of UV-LEDs using Quaternary InAlGaN-Toward Shorter Wavelength and High-Efficiency Operation-2003

    • Author(s)
      H.Hirayama, K.Akita, T.Nakamura, M.Kiyama, Y.Aoyagi
    • Journal Title

      Technical Report of IEICE ED2003-134

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Marked enhancement of 320-360nm UV emission in quaternary In_xAl_yGa_<1-x-y> N with In-segregation effect2002

    • Author(s)
      H.Hirayama
    • Journal Title

      Appl.Phys.Lett. 80

      Pages: 207-209

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002

    • Author(s)
      H.Hirayama
    • Journal Title

      Appl.Phys.Lett. 80

      Pages: 1589-1591

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High Doped p-Type GaN Grown by Alternative Co-Doping Technique2002

    • Author(s)
      S.Iwai
    • Journal Title

      Material Research Society Symposium Proceeding 719

      Pages: 3-9

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures2002

    • Author(s)
      H.Teisseyre
    • Journal Title

      Phys.Stat.Sol.(b) 234

      Pages: 764-768

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] InAlGaN4元混晶を用いた330nm帯高効率紫外LED2002

    • Author(s)
      平山秀樹
    • Journal Title

      日本結晶成長学会誌 29

      Pages: 18-26

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Marked enhancement of 320-360 nm UV emission in quaternary InxAlyGal-x-yN with In-segregation effect2002

    • Author(s)
      H.Hirayama, T.Yamabi, A.Kinoshita, Y.Enomoto, A.Hirata, T.Araki, Y.Nanishi, Y.Aoyagi
    • Journal Title

      Appl.Phys.Lett. vol.80, no.2

      Pages: 207-209

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002

    • Author(s)
      H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl.Phys.Lett. vol.80, no.9

      Pages: 1589-1591

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells2002

    • Author(s)
      H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl.Phys.Lett. vol.80, no.1

      Pages: 37-39

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Fabrication of Low Threading Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices2002

    • Author(s)
      H.Hirayama, M.Ainoya, A.Kinoshita, A.Hirata, Y.Aoyagi
    • Journal Title

      Appl.Phys.Lett. vol.80, no.12

      Pages: 2057-2059

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High Doped p-Type GaN Grown by Alternative Co-Doping Technique2002

    • Author(s)
      S.Iwai, H.Hirayama, Y.Aoyagi
    • Journal Title

      Material Research Society Symposium Proceeding Vol.719

      Pages: 3-9

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures2002

    • Author(s)
      H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
    • Journal Title

      Phys.Stat.Sol.(b) vol.234, no.3

      Pages: 764-768

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Development of 300 nm Band High-Intensity Ultraviolet(UV) LEDs using Quaternary InAlGaN2002

    • Author(s)
      H.Hirayama, A.Kinoshita, Y.Aoyagi
    • Journal Title

      Oyobuturi Vol.71, No.2

      Pages: 204-208

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth of (In)AlGaN Compound Semiconductors and their Application to 300-nm-Band High-Intensity UV-LEDs2002

    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      The Review of Laser Engineering Vol.30, No.6

      Pages: 308-314

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] 330nm-Band High-Efficiency UV-LEDs using Quaternary InAlGaN2002

    • Author(s)
      H.Hirayama, Y.Aoyagi
    • Journal Title

      Japanese Journal of Crystal Growth vol.29, no.3

    • Description
      「研究成果報告書概要(欧文)」より
  • [Book] LED最新技術動向〜性能向上・課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005

    • Author(s)
      H.Hirayama
    • Total Pages
      91-104
    • Publisher
      情報機構
    • Description
      「研究成果報告書概要(和文)」より
  • [Book] Opt0elelectronic Devices : III-Nitrides, Chapter 11, Quaternary InAlGaN-based UV LEDs2004

    • Author(s)
      H.Hirayama
    • Total Pages
      285-322
    • Publisher
      Elsevier
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 半導体発光素子2004

    • Inventor(s)
      平山 秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      特願2004-007325
    • Filing Date
      2004-01-14
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 発光素子及びその製造方法2003

    • Inventor(s)
      平山 秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      特願2003-296474
    • Filing Date
      2003-08-20
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] p型半導体を用いた紫外発光素子2003

    • Inventor(s)
      平山 秀樹
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      特願2003-017397
    • Filing Date
      2003-01-27
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] 半導体の結晶成長方法、半導体の不純物ドーピング方法及びその装置並びに半導体材料2003

    • Inventor(s)
      岩井 荘八
    • Industrial Property Rights Holder
      独立行政法人理化学研究所
    • Industrial Property Number
      特願2003-016940
    • Filing Date
      2003-01-27
    • Description
      「研究成果報告書概要(和文)」より

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Published: 2006-07-11  

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