2003 Fiscal Year Final Research Report Summary
Ultra-High-Speed and High-Precision Integration Circuit Using Si(110) Surface Metal Substrate SOI Balanced-CMOS
| Project/Area Number |
14205052
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | TOHOKU UNIVERSITY |
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Principal Investigator |
OHMI Tadahiro TOHOKU UNIVERSITY, New Industry Creation Hatchery Center, Professor, 未来科学技術共同研究センター, 教授 (20016463)
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| Co-Investigator(Kenkyū-buntansha) |
HIRAYAMA Masaki TOHOKU UNIVERSITY, New Industry Creation Hatchery Center, Associate Professor, 未来科学技術共同研究センター, 助教授 (70250701)
KOTANI Koji TOHOKU UNIVERSITY, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (20250699)
SUGAWA Shigetoshi TOHOKU UNIVERSITY, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (70321974)
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| Project Period (FY) |
2002 – 2003
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| Keywords | Si(110)surface / Si_3N_4 gate insulator / Balanced-CMOS / 1 / f noise / Room Temperature 5 step Cleaning / System LSI / Channel mobility / Microwave-excited high-density plasma |
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| Research Abstract |
In order to improve the quality of Si_3N_4 gate insulator used as the gate insulator in MISFET, microwave-excited Xe plasma gas was used instead of conventional Ar plasma. Xe plasma can realize damage-free processes because the electron temperature is very low (0.5 eV). As a result, life time of the insulator (Qbd) became 10^4 times as long as that of the conventional one. In addition, the room temperature 5 steps cleaning were introduced instead of the conventional RCA cleaning. This cleaning can realize flat Si(110) surface (Ra:=0.08nm). Therefore, 1/f noise was suppressed 10^2 times as low as the conventional level and hole mobility was 2.5 times improved and balanced as compared with electron mobility.
Appling those technologies balanced-CMOS in which the areas of nMOS and pMOS are the same was fabricated. Theoretically predicted properties of the balanced-CMOS were confirmed experimentally. Particularly, the 101 steps CMOS ring oscillation was successfully observed and the merits of the usage of Si(110)surface as compared with Si(100)surface was confirmed. As a result, the technology for the fabrications of system-LSI with operating frequency range above 10 GHz was established for network home information appliances in the next generation.
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[Publications] I.Takahashi, H.Sakurai, A.Yamada, K.Funaiwa, K.Hirai, S.Urabe, T.Goto, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "Oxygen radical treatment applied to ferroelectric thin films"Applied Surface Science. Vol.216. 239-245 (2003)
Description
「研究成果報告書概要(和文)」より
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[Publications] I.Takahashi, H.Sakurai, A.Yamada, K.Funaiwa, K.Hirai, S.Urabe, T.Goto, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "Ferroelectric Sr_2(Ta_<1-x>,nb_x)_2O_7 with a lowDielectric Constant by Plasma Physical vapor Deposition and Oxygen Radical Treatment"Jpn.J.Appl.Phys.. Vol.42 No.4B. 2050-2054 (2003)
Description
「研究成果報告書概要(和文)」より
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[Publications] I Takahashi, H.Sakurai, A.Yamada, K.Funaiwa, K.Hirai, S.Urabe, T.Goto, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "Oxygen radical treatment applied to ferroelectric thin films"Applied Surface Science. Vol.216. 239-245 (2003)
Description
「研究成果報告書概要(欧文)」より
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[Publications] I TAKAHASHI, H.SAKURAI, A.YAMADA, K.FUNAIWA, K.HIRAI, S.URABE, T.GOTO, M.HIRAYAMA, A.TERAMOTO, S.SUGAWA, T.OHMI: "Ferroelectric Sr_2 (Ta_<1-x>,Nb_x) _2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment"Jpn.J.Appl.Phys.. Vol.42 No.4B. 2050-2054 (2003)
Description
「研究成果報告書概要(欧文)」より
