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2003 Fiscal Year Final Research Report Summary

Research on the coherent control of electron spins in quantum dots

Research Project

Project/Area Number 14350001
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

MUTO Shunichi  HOKKAIDO Univ., Grad.School of Eng., Prof., 大学院・工学研究科, 教授 (00114900)

Co-Investigator(Kenkyū-buntansha) SHIRAMINE Kenichi  HOKKAIDO Univ., Grad.School of Eng., Instructor, 大学院・工学研究科, 助手 (10241358)
TODA Yasunori  HOKKAIDO Univ., Grad.School of Eng., Asso.Prof., 大学院・工学研究科, 助教授 (00313106)
ADACHI Satoru  HOKKAIDO Univ., Grad.School of Eng., Asso.Prof., 大学院・工学研究科, 助教授 (10221722)
TAKEUCHI Atsushi  Waseda Univ., Sci.and Eng., Prof., 理工学部, 教授 (80298140)
Project Period (FY) 2002 – 2003
Keywordscoherent controle / electron spins / quantum dots / circular polarized light / relaxation time / exciton / lifetime / relaxation mechanism
Research Abstract

Self-assembled InAlAs/AlGaAs quantum dots are grown by the Stranski-Krastanow mode of Molecular Beam Epitaxy (MBE). We measured the spin relaxation time of the structure under the non-resonant optical excitation by using 80 fs pulses by the titanium sapphire laser at wavelength of 780 nm. We used the right circular polarized light for the excitation of carrires to obtain fixed electron spins. The luminescence from the quantum dots at 10 K was divided into the right circular and the left circular components and was temporary resolved by the streak-scope. While the lifetime of the exciton was about 1 18 ns, the spin relaxation time determined by the decay of the polarization of luminescence was 1.31 us, which is comparable to the lifetime. The result indicates that the major relaxation mechanisms in the quantum well are not effective in the quantum dots and that the quantum dot is a good material for the coherent control of electron spins.
As the spin-electronisc material for the future generations, wide-gap semiconductors and a polymer was studied with emphasis on the magnetic or spintronic properties.

  • Research Products

    (42 results)

All Other

All Publications (42 results)

  • [Publications] Yuji Watanabe, shunichi Muto, Masayoshi Tabata: "Peculiar Field-Cycle Dependence of Magnetization Observed for Poly(phenyl)acetylene Prepared with a Rh Complex Catalyst"Jpn.J.Appl.Phys.. 43. 300-302 (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sasakura, S.Adachi, S.Muto, T.Usuki, (他1名): "Coulomb interaction in asymmetric triple-coupled quantum dots"Semiconductor Science and Technology. 19. S409-S411 (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] O.Ikeuchi, S.Adachi, H.Sasakura, S.Muto: "Observation of population transfer to dark exciton states by using spin-diffracted four-wave mixing"Journal of Applied Physics. 93. 9634-9638 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sasakura, S.Adachi, S.Muto: "Quantum gates based on electron spins of triple quantum dot"Japanese Journal of Applied Physics. 42. 6308-6313 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sasakura, S.Adachi, S.Muto, H.Z.Song, (他2名): "Carrier tunneling in asymmetric double quantum dots"Physica E. 21. 511-515 (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Adachi, S.Maki, O.Ikeuchi, H.Sasakura, S.Muto: "Spin-diffracted four-wave mixing measurements of exciton spin relaxation and population transfer to dark states"Proceedings of SPIE, Ultrafast Phenomena in Semiconductors VII. 4992. 241-248 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Adachi, S.Muto, K.Hazu, T.Sota, K.Suzuki, (他2名): "Exciton-exciton interaction and hetro-biexciton in GaN"Physical Review B. 67. 205212/1-205212/5 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Adachi, H.Sasakura, S.Muto, K.Hazu, T.Sota, (他2名): "Exciton-exciton correlation effects on FWM in GaN"Physica Status Solidi(b). 240. 348-351 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Toda, T.Matsubara, R.Morita, K.Hoshino, (他2名): "Efficient two-photon absorption of bulk GaN in the near-infrared region"Physica Status Solidi(c). 0. 2627-2630 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Hazu, T.Sota, K.Suzuki, S.Adachi, SF.Chichibu, (他4名): "Strong biexcitonic effects and exciton-exiton correlations in bulk ZnO"Physical Review B. 68. 033205/1-033205/4 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Adachi, K.Hazu, T.Sota, SF.Chichibu, (他4名): "Biexciton formation and exciton-exciton correlation effects in bulk ZnO"Semiconductor Science and Technology. 19. S276-S278 (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Hazu, T.Sota, K.Suzuki, S.Adachi, S.F.Chichibu: "Optical nonlinearities of excitons in ZnO single crystal"Proceedings of SPIE, Ultrafast Phenomena in Semiconductors VII. 4992. 257-263 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] S.Adachi, K.Hazu, T.Sota, SF.Chichibu, (他3名): "Scattering processes and dynamics of exciton-biexciton system in GaN"Proceedings of SPIE, Ultrafast Phenomena in Semiconductors VII. 4992. 188-201 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Toda, T.Matsubara, R.Moria, M.Yamashita, (他3名): "Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the bandgap"Applied Physics Letters. 82. 4713-4715 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] T.Inoue, Y.Toda, K.Hoshino, T.Someya, (他1名): "Raman study of the strain in GaN films by comparison with a free-standing GaN"Physica Status Solidi(c). 0. 2428-2431 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Hazu, T.Sota, K.Suzuki, S.Adachi, SF.Chichibu, (他4名): "Strong biexcitonic effects and exciton-exciton correlations in bulk ZnO"Physical Review B. 68. 033205/1-033205/4 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Hazu, A.Shikanai, T.Sota, K.Suzuki, S.Adachi, (他2名): "Optical nonlinearities and phase relaxation of excitons in GaN"Physical Review B. 65. 195202/1-195202/8 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] N.Matsumura, T.Haga, S.Muto, (他4名): "Two modes of Ga diffusion into InAs self-assembled quantum dots suggested by ion channeling"Physica E. 13. 1168-1171 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Shiramine, T.Itoh, S.Muto, (他2名): "Adatom migration in Stranski-Krastanow growth of In As quantum dows"Journal of Crystal Growth. 242. 332-338 (2002)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Shiramine, T.Itoh, S.Muto: "Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode"Journal of Vacuum Science & Technology B. 22・2. 642-646 (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] H.Sasakura, S.Adachi, S.Muto, (他3名): "Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure"The Japan Society of Applied Physics. 43・4B(In press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Shiramine, T.Itoh, S.Muto, et al.: "Adatom migration in Stranski-Krastanow growth of InAs quantum dows"J.Cryst.Growth.. 242. 332-338 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hazu, A.Shikanai, T.Sota, K.Suzuki, S.Adachi, et al.: "Optical nonlinearities and phase relaxation of excitons in GaN"Phys.Rev.B. 65. 195292/1-195202/8 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] N.Matsumura, T.Haga, S.Muto, et al.: "Two modes of Ga diffusion into InAs self-assembled quantum dots suggested by ion channeling"Physica E. 13. 1168-1171 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] O.Ikeuchi, S.Adachi, H.Sasakura, S.Muto: "Observation of population transfer to dark exciton states by using spin-diffracted four-wave mixing"J.Appl.Phys.. 93. 9634-9638 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sasakura, S.Adachi, S.Muto: "Quantum gates based on electron spins of triple quantum dot"Jpn.J.Appl.Phys.. 42. 6308-6313 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Adachi, S.Maki, O.Ikeuchi, H.Sasakura, S.Muto: "Spin-diffracted four-wave mixing measurements of exciton spin relaxation and population transfer to dark states"Proceedings of SPIE, Ultrafast Phenomena in Semiconductors VII 4992. 241-248 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Adachi, K.Hazu, T.Sota, SF.Chichibu, et al.: "Scattering processes and dynamics of exciton-biexciton system in GaN"Proceedings of SPIE, Ultrafast Phenomena in Semiconductors VII 4992. 188-201 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hazu, T.Sota, K.Suzuki, S.Adachi, S.F.Chichibu: "Optical nonlinearities of excitons in ZnO single crystal"Proceedings of SPIE, Ultrafast Phenomena in Semiconductors VII 4992. 257-263 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Adachi, S.Muto, K.Hazu, T.Sota, K.Suzuki, et al.: "Exciton-exciton interaction and hetro-biexciton in GaN"Phys.Rev.B. 67. 205212/1-205212/5 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Adachi, H.Sasakura, S.Muto, K.Hazu, T.Sota, et al.: "Exciton-exciton correlation effects on FWM in GaN"Physica Status Solidi (b). 240. 348-351 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Hazu, T.Sota, K.Suzuki, S.Adachi, SF.Chichibu, et al.: "Strong biexcitonic effects and exciton-exciton correlations in bulk ZnO"Phys.Rev.B. 68. 033205/1-033205/4 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Toda, T.Matsubara, R.Morita, M.Yamashita, et al.: "Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the bandgap"Appl.Phys.Lett.. 82. 4713-4715 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Toda, T.Matsubara, R.Morita, K.Hoshino, et al.: "Efficient two-photon absorption of bulk GaN in the near-infrared region"Physica Status Solidi (c). 0. 2627-2630 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] T.Inoue, Y.Toda, K.Hoshino, T.Someya, et al.: "Raman study of the strain in GaN films by comparison with a free-standing GaN"Physica Status Solidi (c). 0. 2428-2431 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yuji Watanabe, Shunichi Muto, Nasayoshi Tabata: "Peculiar Field-Cycle Dependence of Magnetization Observed for Poly(phenyl)acetylene Prepared with a Rh Complex Catalyst"Jpn.J.Appl.Phys.. 43. 300-302 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sasakura, S.Adachi, S.Muto, T.Usuki, et al.: "Coulomb interaction in asymmetric triple-coupled quantum dots"Semiconductor Science and Technology. 19. S409-S411 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sasakura, S.Adachi, S.Muto, H.Z.Song, et al.: "Carrier tunneling in asymmetric double quantum dots"Physica E. 21. 511-515 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] S.Adachi, K.Hazu, T.Sota, SF.Chichibu, et al.: "Biexciton formation and exciton-exciton correlation effects in bulk ZnO"Semiconductor Science and Technology. 19. S276-S278 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Y.Toda, R.Morita, T.Nakaoka, et al.: "Selective excitation of self-assembled quantum dots by using shaped pulse"Physica E. 21/2-4. 180-183 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] K.Shiramine, T.Itoh, S.Muto: "Critical cluster size of InAs quantum dots formed by Stranski-Krastanow mode"J.Vac.Sci.Tech.B. 22. 642-646 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] H.Sasakura, S.Adachi, S.Muto, et al.: "Spin Depolarization via Tunneling Effects in Asymmetric Double Quantum Dot Structure"Jpn.J.Appl.Phys.. 43, No.4B(in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2005-04-19  

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