A STUDY ON TUNNELING-SPECTROSCOPIC DEVICES WITH NANO-GAP STRUCTURE USING ULTRATHIN SILICON DIOXIDE FILM AS A SPACER

2005 Fiscal Year Final Research Report Summary

• Project/Area Number: 14350166
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Osaka University
• Principal Investigator: MORITA Mizuho Osaka University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (50157905)
• Co-Investigator(Kenkyū-buntansha): ARIMA Kenta Osaka University, Graduate School of Engineering, Assistant Professor, 大学院・工学研究科, 助手 (10324807)
• Project Period (FY): 2002 – 2005
• Keywords: NANO-GAP / SENSING / SILICON DIOXIDE / SILICON / ULTRAPURE WATER / CAPACITANCE / CONDUCTANCE

Research Abstract

Sensing devices with a silicon/nano-gap/silicon structure using a silicon dioxide film as a spacer have been fabricated, and ultrapure water introduced into the nano-gap of the sensing device has been found to be detected by the change of capacitance and conductance for the sensing device. The frequency dependence of capacitance and conductance changes by introducing ultrapure water into the nano-gap has been demonstrated. Scanning electron microscope observation of the cross section of the device structure has shown that a nano-gap structure with a silicon dioxide film as a spacer was fabricated. Fourier transform infrared absorption measurements for the device structure have shown that ultrapure water penetrates into the nano-gap. Near-infrared ray transmission measurements for the device structure have shown that ultrapure water penetrates through the nano-gap and that the nano-gap structure was fabricated as designed, because silicon is transparent to near-infrared ray. It has confirmed that ultrapure water penetrates into the nano-gap because sensing surface is hydrophobic. The effect of silicon dioxide of sensing surface on sensing ultrapure water in the nano-gap has been examined and the condition of high sensitively has been found. We have proposed a sensing model of electron response through states of water.

Research Products

• [Journal Article] Development of Nano-Gap Device for Biosensor (2005)
  • Author(s): Satoru Morita, Takaaki Hirokane, Tatsuya Takegawa, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
  • Journal Title: Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials Pages: 828-829
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Reaction of Hydrogen-Terminated Si(100) Surfaces with Oxygen at Very Low Pressures during Heating (2005)
  • Author(s): Shinichi URABE, Kazuo NISHIMURA, Syuhei NISHIKAWA, Satoru MORITA, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 44・11 Pages: 8091-8095
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Reaction of Hydrogen-Terminated Si(100) Surfaces with Oxygen at Very Low Pressures during Heating (2005)
  • Author(s): Shinichi URABE, Kazuo NISHIMURA, Syuhei NISHIKAWA, Satoru MORITA, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 44(11) Pages: 8091-8095
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Nano-Gap Device for Liquid Sensing (2004)
  • Author(s): Satoru MORITA, Tatsuya TAKEGAWA, Takaaki HIROKANE, Shinichi URABE, Kenta ARIMA, Junichi UCHIKOSHI, Mizuho MORITA
  • Journal Title: Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials Pages: 704-705
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure (2004)
  • Author(s): Satoru MORITA, Akihito SHINOZAKI, Yuuki MORITA.Kazuo NISHIMURA, Tatsuya OKAZAKI, Shinichi URABE, Nizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 43・11B Pages: 7857-7860
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling (2004)
  • Author(s): Shinichi URABE, Kazuo NISHIMURA, Satoru MORITA, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 43・12 Pages: 8242-8247
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure (2004)
  • Author(s): Satoru MORITA, Akihito SHINOZAKI, Yuuki MORITA, Kazuo NISHIMURA, Tatsuya OKAZAKI, Shinichi URABE, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 43(11B) Pages: 7857-7860
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling (2004)
  • Author(s): Shinichi URABE, Kazuo NISHIMURA, Satoru MORITA, Mizuho MORITA
  • Journal Title: Japanese Journal of Applied Physics 43(12) Pages: 8242-8247
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO_2 Surfaces (2003)
  • Author(s): Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Isao KOJIMA, Yasushi AZUMA
  • Journal Title: ANALYTICAL SCIENCES 19 Pages: 1557-1559
  • Description: 「研究成果報告書概要(和文)」より
• [Book] 赤外線加熱工学ハンドブック 極薄シリコン酸化膜形成への応用 (2003)
  • Author(s): 森田瑞穂
  • Total Pages: 118-126
  • Publisher: アグネ技術センター
  • Description: 「研究成果報告書概要(和文)」より