2004 Fiscal Year Final Research Report Summary
Room-Temperature Selective Homoepitaxial Growth of Functional Oxide Thin Films Induced by Electron Beam Irradiation and Its Application
| Project/Area Number |
14350347
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
YOSHIMOTO Mamoru Tokyo Inst. Tech., Mater.& Struc. Lab., Assoc.Professor, 応用セラミックス研究所, 助教授 (20174998)
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| Project Period (FY) |
2002 – 2004
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| Keywords | electron beam / irradiation / oxide / thin film / room temperature / micro-pattern / crystal growth / epitaxial film |
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| Research Abstract |
The surface micro-structure of sapphire (Al2O3) substrates could be constructed at room temperature via selective sapphire homoepitaxial growth induced by electron beam irradiation in laser molecular beam epitaxy. The films grew homoepitaxially on sapphire (10-12) substrates even at room temperature only in the region electron-irradiated during film deposition, while amorphous aluminum oxide films were grown at the non-irradiated area. The surface micro-patterns on sapphire substrates were easily obtained by the selective H3PO4 wet-etching of the modified sapphire surface coated with crystalline and amorphous film. The micro-scale wall and groove could be fabricated on the sapphire substrates at room temperature.
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