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2003 Fiscal Year Final Research Report Summary

Development of amorphous transparent conductive oxide films and their applications to transparent electrodes

Research Project

Project/Area Number 14550301
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Tokushima

Principal Investigator

TOMINAGA Kikuo  The University of Tokushima, Faculty of Engineering, Associate Professor, 工学部, 助教授 (10035660)

Co-Investigator(Kenkyū-buntansha) NAKABAYASHI Ichiro  The University of Tokushima, Faculty of Engieeering, Professor, 工学部, 教授 (70035624)
Project Period (FY) 2002 – 2003
KeywordsTCO films / Transparent conductive oxide films / amorphous films / In_2O_3-ZnO / SnO_2-ZnO / ZnO-SnO_2 / Infrared absorption film / Highly transparent oxide films
Research Abstract

We deposited In_2O_3-ZnO transparent conductive films by simultaneous sputtering of ZnO and In_2O_3 ceramic targets. Amorphous and homologous phases appeared with increasing δ=Zn/(Zn+In) ratios. Carrier generation mechanism was discussed for these films. Native oxygen defects are the primary donors for the In_2O_3-ZnO films. Then the low resistivities of 2〜4×10^<-4> Ω cm were attained within a narrow range of δ=Zn/(Zn+In) in the amorphous phase film. 2 wt% Al_2O_3-doping decreased the resistivity to 1.5〜2.1×10^<-4>Ωcm. At doping of 3 wt% and 4 wt% Al_2O_3, film resistivities of 2-4×10^<-4> were attained for a relatively wide range of δ in the amorphous phase due to an increase in carrier concentration at δ=0.3-0.6. On the other hand, Al_2O_3 doped in the homologous Zn_kIn_2O_<k+3> crystalline films did not act as donor impurities. The optical bandgap energy for the films deposited above 2 wt% Al_2O_3 for amorphous film was proportional to Al_2O_3 content, ascribed to lattice distortion … More by Al_2O_3. Post annealing under the reductive gas flow was effective on improving unevenness of the amorphous films.
Thin films of ZnO-SnO_2 system were also deposited by the same method, where ZnO and SnO_2:Sb (Sb_2O_5 3wt% doped) targets were faced each other. Compositions in as-deposited films were changed with the current ratio δ. Amorphous transparent films appeared in a range of 0.47【less than or equal】δ【less than or equal】0.80 (Zn/(Sn+Zn)=0.28-0.76) at Ts=150℃, in a range of 0.33【less than or equal】δ【less than or equal】0.73 (Zn/(Sn+Zn)=0.32-0.66) at Ts=250℃. At δ=0.62 (Zn/(Sn+Zn)=1/2) or 6=0.73 (Zn/(Sn+Zn)=2/3) and any other ratio in as-deposited films we could obtain neither crystalline ZnSnO_3 nor Zn_2SnO_4 Amorphous films would exist as forms of (ZnSnO_3)_x(SnO_2)_<1-x> in a range of 0.5【less than or equal】δ【less than or equal】0.62 (0【less than or equal】δ【less than or equal】) and (ZnSnO_3)_<1-y>(ZnO)_y, in a range of 0.62【less than or equal】δ【less than or equal】0.73 (0【less than or equal】y【less than or equal】0.5). Minimum resistivity of amorphous films deposited was 3.6×10^<-2> Ωcm at δ=0.50 (Zn/(Sn+Zn)=0.33), Ts=250℃. Less

  • Research Products

    (8 results)

All Other

All Publications (8 results)

  • [Publications] T.Moriga, I.Nakabayashi, Kikuo Tominaga et al.: "Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous DC Sputtering"J.Vac.Sci.Technol.A. To be published. (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Y.Hayashi, I.Nakabayashi, K.Tominaga et al.: "ZnO-SnO_2 transparent conductive films deposited by opposed target sputtering system of ZnO and SnO_2 targets"Vacuum. To be published. (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] K.Tominaga, I.Nakabayashi et al.: "Al-impurity-doped transparent conductive oxide films of In_2O_3-ZnO system"Vacuum. To be published. (2004)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] A.Fukushima, I.Nakabayashi, K.Tominaga et al.: "Annealing effects on transparent conducting properties of amorphous ZnO-In_2O_3 films"Int.J.Modern Physics B. Vol.17, No.8&9. 1188-1192 (2003)

    • Description
      「研究成果報告書概要(和文)」より
  • [Publications] Toshihiro Moriga, Yukako Hayashi, Kumiko Kondo, Yusuke Nishimura, Kei-ichiro Murai, Ichiro Nakabayashi, Hidenori Fukumoto, Kikuo Tominaga: "Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous DC Sputtering"J.Vac.Sci.Technol.A. (to be published). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Yukako Hayashi, Kumiko.Kondo, Keiichiro Murai, T.Moriga, Ichiro Nakabayashi, Hidenori Fukumoto, Kikuo Tominaga: "ZnO-SnO_2 transparent conductive films deposited by opposed target sputtering system of ZnO and SnO_2 targets"Vacuum. (to be published). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Kikuo Tominaga, Hidenori.Fukumoto, Kumiko Kondou, Yukako Hayashi, Keiichiro Murai, Toshihiro Moriga, Ichiro Nakabayashi: "Al-impurity-doped transparent conductive oxide films of In_2O_3-ZnO system"Vacuum. (to be published). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Publications] Akihiko Fukushima, Yukako Hayashi, Kumiko Kondo, Toshihiro Moriga, Keiichiro Murai, Ichiro Nakabayashi, Kikuo Tominaga: "Annealing effects on transparent conducting properties of amorphous ZnO-In_2O_3 films"Int.J.Modern Physics B. 1188. 1188-1192 (2003)

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2005-04-19  

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