2004 Fiscal Year Final Research Report Summary
A study on plasmaless etchig process for fabrication of micro-systems
| Project/Area Number |
14550305
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Seikei University |
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Principal Investigator |
SAITO Yoji Seikei University, Facuty of Engineering, Professor, 工学部, 教授 (90196022)
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| Co-Investigator(Kenkyū-buntansha) |
SUZUKI Seiichi Seikei University, Facuty of Engineering, Associate Professor, 工学部, 助教授 (40235958)
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| Project Period (FY) |
2002 – 2004
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| Keywords | infrared sensor / solar cells / biosensors / texturing / micro-channel / hydrogen fluoride / chlorine trifluoride |
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| Research Abstract |
Properties, mechanism, and application of plasmaless etching, using reactive gases, were mainly investigated in this study. First, etch characteristics of annealed spin-on-glass films using anhydrous hydrogen fluoride were investigated. Next, etch characteristics of silicon, silicon dioxide, and glass-like carbon by chlorine trifluoride were clarified.
As an application of plasmaless etching process, chlorine trifluoride was used to form bridge structures in thermal type infrared sensor devices. Highly-sensitive bolometer devices were fabricated using polycrystalline silicon films as a sensing material. Next, the plasmaless etching process was applied to surface texturing of solar cells. Anti-reflective surfaces of polycrystalline silicon substrates were obtained by the slight etching with chlorine trifluoride. Next, fabrication process of biosensors was investigated. Micro-cell sorters were fabricated, and the blood cells in the channel are deflected by dielectrophoretic force, exerted by the vacuum evaporated electrodes. A sticking technique for glass substrates was investigated to make micro-channels. The glass substrates were stuck to each other by the treatment with diluted hydrogen fluoride and low temperature annealing.
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