2015 Fiscal Year Annual Research Report
グラフェン技術を用いた次世代巨大磁気抵抗スピントロニクスデバイスの開発
| Project/Area Number |
14F04357
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| Research Institution | Tohoku University |
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Principal Investigator |
吹留 博一 東北大学, 電気通信研究所, 准教授 (10342841)
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| Co-Investigator(Kenkyū-buntansha) |
VENUGOPAL GUNASEKARAN 東北大学, 電気通信研究所, 外国人特別研究員
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| Project Period (FY) |
2014-04-25 – 2017-03-31
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| Keywords | グラフェン / スピントロニクス |
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| Outline of Annual Research Achievements |
Spintronics is one of the most exciting and challenging areas in nanotechnology, important to both fundamental scientific research and industrial applications. Nowadays, microelectronic devices continue to diminish in size to achieve higher speeds. As this shrinkage occurs, design parameters are impacted in such a way that the materials in current use are pushed to their limits. To keep the rate of device shrinkage and still maintain overall performance goals, the data storage capacity will eventually reach a natural performance limit even with some technical innovations. With the limits of microelectronic miniaturization in sight there has been an enormous drive to innovate radically new materials and technologies in order to match the continued expansion of the world economy and to meet the insatiable demands of the world microprocessor market.
This project therefore aims at development of novel Giant Magneto-Resistive (GMR) devices using two-dimensional materials.
I have studied a toplogically insulating material, Bismuth selenide. By using Scotch-tape which has been utilized for the production of high-quality graphene with an inexpensive cost,I have successfully fabricated transistor using this material.Then, the transistor worked well.This analysis offers the extraction of basic device parameters, such as transconductance.Furthermore, I have obtained detailed insight into electron conduction mechanisms, such as trapping and tunneling
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
This project therefore aims at development of novel Giant Magneto-Resistive (GMR) devices using two-dimensional materials.
I have studied a toplogically insulating material, Bismuth selenide. By using Scotch-tape,I have successfully fabricated transistor using this material.This topoloical material is in fact suitable for spintronics, so that the obtained result proceed this project.
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| Strategy for Future Research Activity |
I have successfully fabricated transistor using this material.This topoloical material is in fact suitable for spintronics, so that the obtained result proceed this project.Therefore, the detailed investigation of this material and other 2D materials studies are preferred for a future work.
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