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2014 Fiscal Year Annual Research Report

印刷できるLSI用有機単結晶半導体トランジスタの物理モデル開発

Research Project

Project/Area Number 14F04777
Research InstitutionThe University of Tokyo

Principal Investigator

竹谷 純一  東京大学, 新領域創成科学研究科, 教授 (20371289)

Co-Investigator(Kenkyū-buntansha) HAEUSERMANN Roger  東京大学, 新領域創成科学研究科, 外国人特別研究員
Project Period (FY) 2014-04-25 – 2016-03-31
Keywords有機エレクトロニクス / 半導体 / フレキシブルエレクトロニクス / 集積回路 / 電界効果トランジスタ / 接触抵抗 / 電荷注入 / 電気特性変動シミュレーション
Outline of Annual Research Achievements

Understanding the processes governing the injection of charge carriers from the metal into the organic semiconductor is crucial for improving organic semiconductor devices.In my research we built organic single-crystalline field-effect transistor. Single-crystal organic semiconductors are becoming the standard for research and applications. Therefore, it is vital to investigate the charge injection into these single crystals.
We built over 2 dozen transistors. Depending on the details of the processing conditions, we observed 3 distinguished features in the injection characteristics. Thanks to careful analysis in combination with a self developed numerical simulator we could trace the origin of some of these effects.
We could show, that a widely observed reduction of the contact resistance is due to filling of defects in the contact region. This is a first evidence of the direct influence of defects on the contact resistance.

Current Status of Research Progress
Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

As planned, we managed to measure and analyze how the charge injection is influenced by external parameters. We implemented some of the found parameters into a comprehensive as well as a simplified simulation model, which lead to a deeper understanding of the contact region.

Strategy for Future Research Activity

I am in preparation of a manuscript describing the influence of defect states on charge injection and in parallel analyzing more data leading to an additional publication. We plan to present these findings at two international conferences, one in Japan and one in the USA. To intensify this research, we are in discussion with an industrial partner to start a collaboration.

  • Research Products

    (5 results)

All 2015 2014

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (3 results)

  • [Journal Article] All Solution-Processed Organic Single-Crystal Transistors with High Mobility and Low-Voltage Operation2015

    • Author(s)
      S. Sakai, J. Soeda, R. Haeusermann, H. Matsui, C. Mitsui, T. Okamoto, M. Ito, et al.
    • Journal Title

      Organic Electronics

      Volume: 22 Pages: 1-4

    • DOI

      10.1016/j.orgel.2015.03.015

    • Peer Reviewed
  • [Journal Article] High Mobility and Low Density of Trap States in Dual-Solid-Gated PbS Nanocrystal field-effect Transistors2015

    • Author(s)
      Mohamad Insan Nugraha, Roger Haeusermann, Satria Zulkarnaen Bisri, Hiroyuki Matsui, Mikhailo Sytnyk, Wolfgang Heiss, Jun Takeya, Maria Antonietta Loi
    • Journal Title

      Advanced Materials

      Volume: 27 Pages: 2107-2012

    • DOI

      10.1002/adma.201404495

    • Peer Reviewed
  • [Presentation] Estimating the Density of Trap States in the Middle of the Bandgap using Ambipolar OFETs2014

    • Author(s)
      Roger Haeusermann
    • Organizer
      FET2014 (workshop on field-effect transistors and functional interfaces)
    • Place of Presentation
      三井ガーデンホテル柏の葉(千葉県柏市)
    • Year and Date
      2014-10-17 – 2014-10-21
  • [Presentation] Estimating the Density of Trap States in Ambipolar Organic Field-Effect Transistors“, October 20142014

    • Author(s)
      Roger Haeusermann
    • Organizer
      EET (workshop on Exotic Electronic Transport)
    • Place of Presentation
      ホテル三日月(千葉県木更津市)
    • Year and Date
      2014-10-16 – 2014-10-17
  • [Presentation] The Density of Trap States in the Middle of the Bandgap estimated2014

    • Author(s)
      Roger Haeusermann
    • Organizer
      SSDM (Solid State Devices and Materials)
    • Place of Presentation
      つくば国際会議場(茨城県つくば市)
    • Year and Date
      2014-09-08 – 2014-09-11

URL: 

Published: 2016-06-01  

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