Development of High Energy Photoelectron Spectroscopy and Its Application to Analyses of Chemical States at High-κ dielectric/Silicon Interface

2005 Fiscal Year Final Research Report Summary

• Project/Area Number: 15206006
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Musashi Institute of Technology
• Principal Investigator: HATTORI Takeo Musashi Institute of Technology, Professor Emeritus, 名誉教授 (10061516)
• Co-Investigator(Kenkyū-buntansha): IWAI Hiroshi Tokyo Institute of Technology, Frontier Collaborative Research Center, Professor, フロンテイア創造共同研究センター, 教授 (40313358) ; OHMI Shun-ichiro Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Associate Professor, 大学院・総合理工学研究科, 助教授 (30282859) ; KOBAYASHI Keisuke Japan Synchrotron Radiation Research Institute, Eminent Scientist, 特別研究員 (50372149) ; TAKATA Yasutaka RIKEN SPring-8 Center, Soft X-ray Spectroscopy Laboratory, Senior Research Scientist, 先任研究員 (90261122) ; NOHIRA Hiroshi Musashi Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (30241110)
• Project Period (FY): 2003 – 2005
• Keywords: Synchrotron radiation / photoelectron spectroscopy / Angle-resolved photoelectron spectroscopy / gate insulators / High dielectric constant film / Rare oxide film / Maximum entropy concept / Dielectric constant

Research Abstract

Electron energy analyzer (R4000-10 keV, Gammadata Scienta Co.) dedicated for hard X-ray photoelectron spectroscopy (HX-PES) was developed. Using this analyzer with energy resolution of 45 meV and X-ray with photon energy by of 5.95 keV at undulator beam line BL29XU and BL47XU, which has full width half maximum of 60 meV, photoelectron spectroscopy can be achieved with total resolution of 75 meV (E/ΔE=79,000). Then, the following problems were found : 1)Analyzer could not be used for HXPES excited by 8 keV photons, 2)Power supply was unstable, etc. After these problems were solved, HX-PES with total energy resolution of 75 meV was achieved at hv=8 keV and 90 meV at hv=10 keV. Using this HX-PES system, the thermal stability of LaO_x/Si interface, which will be used as gate insulator in future generation of CMOS devices, was studied by measuring 5.95 keV photons' excited angle-resolved La 3d, Si 1s and O is photoelectron spectra at BL47XU. Si 1s spectra arising from La silicate formed at LaO_x/Si interface were found to appear if this interface was annealed in nitrogen gas under atmospheric pressure at temperature above 400℃. The depth profile of composition and chemical structures of LaO_x/Si structure were determined by applying maximum entropy concept to angle-resolved La 3d, Si 1s and O 1s spectra. Here, the compositional depth profile determined by high resolution Rutherford backscattering was used as a starting compositional depth profile. From these analyses, the thickness of LaO_x/Si interfacial transition layer was found to increase by annealing this interface above 400℃.

Research Products

• [Journal Article] Electronic structure of strained(La_<0.85)Ba<0.15>)MnO_3 thin films with room-temperature ferromagnetism investigated by hard x-ray photoemission spectroscopy (2006)
  • Author(s): H.Tanaka, Y.Takata, K.Horiba, M.Taguchi, A.Chainani, S.Shin, D.Miwa, K.Tamasaku, et al.
  • Journal Title: Physical Review B 73 Pages: 094403・1-6
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Magnetism, microstructure, and photoelectron spectroscopy of Nd_<0.7>Ce_<0.8>MnO_3 thin films (2006)
  • Author(s): T.Yanagida, H.Tanaka, T.Kawai, E.Ikenaga, M.Kobata, J・J.Kim, K.Kobayashi
  • Journal Title: Physical Review B 73 Pages: 132503・1-4
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] High Resolution Hard X-ray Photoemission using Synchrotron Radiation as an Essential Tool for Characterization of Thin Solid Films (2006)
  • Author(s): J.J.Kim, E.Ikenaga, M.Kobata, A.Takeuchi, M.Awaji, H.Makino, P.P.Chen, A.Yamamoto et al.
  • Journal Title: Applies Surface Science (to be published in)
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard x-ray photoelectron spectroscopy at SPring-8 (2006)
  • Author(s): T.Hattori, H.Nohira, K.Azuma, K.W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, et al.
  • Journal Title: International Journal of High Speed Electronics and Systems (to be published in)
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Electronic structure of strained (La_<0.35>Ba_<0.15>)MnO_3 thin films with room-temperature ferromagnetism investigated by hard x-ray photoemission spectroscopy (2006)
  • Author(s): H.Tanaka, Y.Takata, K.Horiba, M.Taguchi, A.Chainani, S.Shin, D.Miwa, K.Tamasaku, Y.Nishino, T.Ishikawa, E.Ikenaga, M.Awaji, A.Takeuchi, T.Kawai, K.Kobayashi
  • Journal Title: Physical Review B 73 Pages: 094403-1-094403-6
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Magnetism, microstructure, and photoelectron spectroscopy of Nd_<0.7>Ce_<0.3>MnO_3 thin films (2006)
  • Author(s): T.Yanagida, H.Tanaka, T.Kawai, E.Ikenaga, M.Kobata, J-J.Kim, K.Kobayashi
  • Journal Title: Physical Review B 73 Pages: 132503-1-132503-4
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Bulk screening in core-level photoemission from Mott-Hubbard and charge-transfer systems (2005)
  • Author(s): M.Taguchi, A.Chainani, N.Kamakura, K.Horiba, Y.Takata, M.Yabashi, K.Tamasaku, et al.
  • Journal Title: Physical Review B 71 Pages: 155102・1-5
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Interface reaction of poly-Si/high-k insulator systems studied by hard X-ray photoemission spectroscopy (2005)
  • Author(s): E.Ikenaga, I.Hirosawa, A.Kitano, Y.Takata, A.Muto, T.Maeda, K.Torii, et al.
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144・147 Pages: 491-494
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Temperature-induced valence transition in transition in EuNi_2(Si_<0.20>Ge_<0.80>)_2 studied by hard X-ray photoemission spectroscopy (2005)
  • Author(s): K.Yamamoto, N.Kamakura, M.Taguchi, A.Chainani, Y.Takata, K.Horiba, S.Shin, et al.
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144・147 Pages: 553-555
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Hard X-ray photoemission study of Mn 2p core-levels of La_<1-x>Sr_xMnO_3 thin films (2005)
  • Author(s): K.Horiba, M.Taguchi, N.Kamakura, K.Yamamoto, A.Chainani, Y.Takata, et al.
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144・147 Pages: 557-559
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Electronic structure of the Ga<1-x>Cr_xN studied high-energy photoemission spectroscopy (2005)
  • Author(s): J.J.Kim, H.Makino, T.Yano, Y.Takata, K.Kobayashi, T.Yamamoto, T.Hanada, et al.
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144・147 Pages: 561-564
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Hard X-ray core level photoemission of vanadium oxides (2005)
  • Author(s): N.Kamakura, M.Taguchi, K.Yamamoto, K.Horiba, A.Chainani, Y.Takata, et al.
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144・147 Pages: 841-843
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] A novel probe of intrinsic electronic structure : hard X-ray photoemission spectroscopy (2005)
  • Author(s): Y.Takata, K.Tamasaku, Y.Nishino, D.Miwa, M.Yabashi, E.Ikenaga, K.Horiba, et al.
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144・147 Pages: 1063-1065
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Development of hard X-ray photoelectron spectroscopy at BL29XU in SPring-8 (2005)
  • Author(s): Y.Takata, M.Yabashi, K.Tmasaku, Y.Nishino, D.Miwa, T.Ishikawa, E.Ikenaga, et al.
  • Journal Title: Nuclear Instruments and Methods in Physics Research A 547 Pages: 50-55
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] High-resolution hard X-ray photoelectron spectroscopy : Application of valence band and core-level spectroscopy to materials science (2005)
  • Author(s): K.Kobayashi
  • Journal Title: Nuclear Instruments and Methods in Physics Research A 547 Pages: 98-112
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Evidence for Suppressed Screening on the Surface of High Temperature La_<2-x>Sr_xCuO_4 and Nd_<2-x)Ce_xCuO_4 Superconductors (2005)
  • Author(s): M.Taguchi, A.Chainani, K.Horiba, Y.Takata, M.Yabashi, K.Tamasaku, Y.Nishino, et al.
  • Journal Title: Physical Review Letters 95 Pages: 177002・1-4
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Bulk screening in core-level photoemission from Mott-Hubbard and charge-transfer systems (2005)
  • Author(s): M.Taguchi, A.Chainani, N.Kamakura, K.Horiba, Y.Takata, M.Yabashi, K.Tamasaku, Y.Nishino, D.Miwa, T.Ishikawa, S.Shin, E.Ikenaga, T.Yokoya, K.Kobayashi, T.Mochiku, K.Hirata, K.Motoya
  • Journal Title: Physical Review B 71 Pages: 155102-1-155102-5
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Interface reaction of poly-Si/high-k insulator systems studied by hard X-ray photoemission spectroscopy (2005)
  • Author(s): E.Ikenaga, I.Hirosawa, A.Kitano, Y.Takata, A.Muto, T.Maeda, K.Torii, H.Kitajima, T.Arikado, A.Takeuchi, M.Awaji, K.Tamasaku, T.Ishikawa, S.Komiya, K.Kobayashi
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144-147 Pages: 491-494
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Temperature-induced valence transition in EuNi_2(Si_<0.20>Ge_<0.30>)_2 studied by hard X-ray photoemission spectroscopy (2005)
  • Author(s): K.Yamamoto, N.Kamakura, M.Taguchi, A.Chainani, Y.Takata, K.Horiba, S.Shin, E.Ikenaga, K.Mimura, M.Shiga, H.Wada, H.Namatame, M.Taniguchi, M.Awaji, A.Takeuchi, Y.Nishino, D.Miwa, K.Tamasaku, T.Ishikawa, K.Kobayashi
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144-147 Pages: 553-555
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Hard X-ray photoemission study of Mn 2p core-levels of La_<1-x>Sr_xMnO_3 thin films (2005)
  • Author(s): K.Horiba, M.Taguchi, N.Kamakura, K.Yamamoto, A.Chainani, Y.Takata, E.Ikenaga, H.Namatame, M.Taniguchi, M.Awaji, A.Takeuchi, D.Miwa, Y.Nishino, K.Tamasaku, T.Ishikawa, H.Kumigashira, M.Oshima, M.Lippmaa, M.Kawasaki, H.Koinuma, K.Kobayashi, S.Shin
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144-147 Pages: 557-559
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Electronic structure of the Gal-xCrxN studied by high-energy photoemission spectroscopy (2005)
  • Author(s): J.J.Kim, H.Makino, T.Yao, Y.Takata, K.Kobayashi, T.Yamamoto, T.Hanada, M.W.Cho, E.Ikenaga, M.Yabashi, D.Miwa, Y.Nishino, K.Tamasaku, T.Ishikawa, S.Shin
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144-147 Pages: 561-564
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Hard X-ray core level photoemission of vanadium oxides (2005)
  • Author(s): N.Kamakura, M.Taguchi, K.Yamamoto, K.Horiba, A.Chainani, Y.Takata, E.Ikenaga, H.Namatame, M.Taniguchi, M.Awaji, A.Takeuchi, K.Tamasaku, Y.Nishino, D.Miwa, T.Ishikawa, Y.Ueda, K.Kobayashi, S.Shin
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144-147 Pages: 841-843
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] A novel probe of intrinsic electronic structure : hard X-ray photoemission spectroscopy (2005)
  • Author(s): Y.Takata, K.Tamasaku, Y.Nishino, D.Miwa, M.Yabashi, E.Ikenaga, K.Horiba, M.Arita, K.Shimada, H.Namatame, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg, M.Taniguchi, S.Shin, T.Ishikawa, K.Kobayashi
  • Journal Title: Journal of Electron Spectroscopy and Related Phenomena 144-147 Pages: 1063-1065
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Development of hard X-ray photoelectron spectroscopy at BL29XU in SPring-8 (2005)
  • Author(s): Y.Takata, M.Yabashi, K.Tamasaku, Y.Nishino, D.Miwa, T.Ishikawa, E.Ikenaga, K.Horiba, S.Shin, M.Arita, K.Shimada, H.Namatame, M.Taniguchi, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg, K.Kobayashi
  • Journal Title: Nuclear Instruments and Methods in Physics Research A 547 Pages: 50-55
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Evidence for Suppressed Screening on the Surface of High Temperature La_<2-x>Sr_xCuO_4 and Nd_<2-x>Ce_xCuO_4 Superconductors (2005)
  • Author(s): M.Taguchi, A.Chainani, K.Horiba, Y.Takata, M.Yabashi, K.Tamasaku, Y.Nishino, D.Miwa, T.Ishikawa, T.Takeuchi, K.Yamamoto, M.Matsunami, S.Shin, T.Yokoya, E.Ikenaga, K.Kobayashi, T.Mochiku, K.Hirata, J.Hori, K.Ishii, F.Nakamura, T.Suzuki
  • Journal Title: Physical Review Letters 95 Pages: 177002-1-177002-4
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer (2004)
  • Author(s): H.Nohira, T.Shiraishi, K.Takahashi, I.Kashiwagi, C.Ohshima, S.Ohmi, et al.
  • Journal Title: Applied Surface Science 234 Pages: 493-496
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer (2004)
  • Author(s): T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, et al.
  • Journal Title: Microelectronic Engineering 72 Pages: 283-287
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Bulk electronic structure of Na_<0.35>CoO_2・1.3H_2O (2004)
  • Author(s): A.Chainani, T.Yokoya, Y.Takata, K.Tamasaku, M.Taguchi, T.Shimojima, N.Kamakura, K.Horiba, et al.
  • Journal Title: Physical Review B 69 Pages: 180508(R)・1-4
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Temperature dependence of the electronic states of Kondo semiconductor YbB_<12> (2004)
  • Author(s): Y.Takeda, M.Arita, M.Higashiguchi, K.Shimada, M.Sawda, H.Sato, et al.
  • Journal Title: Physica B 351 Pages: 286-288
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Temperature dependence of the electronic states of Kondo semiconductor YbB_<12> (2004)
  • Author(s): H.Sato, K.Shimada, M.Arita, Y.Takeda, M.Sawada, M.Nakatake, K.Yoshikawa, et al.
  • Journal Title: Physica B 351 Pages: 298-300
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] A probe of intrinsic valence band electronic structure : Hard x-ray photoemission (2004)
  • Author(s): Y.Takata, K.Tamasaku, T.Tokushima, D.Miwa, S.Shin, T.Ishikawa, M.Yabashi, et al.
  • Journal Title: Applied Physics Letters 84 Pages: 4310-4312
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Nature of the Well Screened State in Hard X-Ray Mn 2p Core-Level Photoemission Measurements of La_<1-x>Sr_xMnO_3 Films (2004)
  • Author(s): K.Horiba, M.Taguchi, A.Chainani, Y.Takata, E.Ikenaga, D.Miwa, Y.Nishino, et al.
  • Journal Title: Physical Review Letters 93 Pages: 236401・1-4
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Hybridization of Cr 3d-N 2p-Ga 4s in the wide band・gap diluted magnetic semiconductor Ga_<1-x>Cr_xN (2004)
  • Author(s): J.J.Kim, H.Makino, K.Kobayashi, Y.Takata, T.Yamamoto, T.Hanada, et al.
  • Journal Title: Physical Review B 70 Pages: 161315(R)・1-4
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Hard X-ray core-level photoemission of V_2O_3 (2004)
  • Author(s): N.Kamakura, M.Taguchi, A.Chainani, Y.Takata, K.Horiba, K.Yamamoto, K.Tamasaku, et al.
  • Journal Title: Europhysics Letters 68 Pages: 557-563
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Hard X-ray photoemission Spectroscopy of Temperature-Induced Valence Transition in EuNi_2(Si_<0.20)Ge_<0.80>)_2 (2004)
  • Author(s): K.Yamamoto, M.Taguchi, N.Kamakura, K.Horiba, Y.Takata, A.Chainani, S.Shin, et al.
  • Journal Title: Journal of Physical Society of Japan 73 Pages: 2616-2619
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy (2004)
  • Author(s): K.Kobayash, Y.Takata, T.Yamamoto, J.J.Kim., H.Makino, K.Tamasaku, M.Yabashi, et al.
  • Journal Title: Japahese Journal of Applied Physics 43 Pages: L1029-L1031
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Valence Transition of YbInCu_4 Observed in Hard X-Ray Photoemission Spectra (2004)
  • Author(s): H.Sato, K.Shimada, M.Arita, F.Hiraoka, K.Kojima, Y.Takeda, K.Yoshikawa, M.Sawada, et al.
  • Journal Title: Physical Review Letters 93 Pages: 246404・1-4
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Electrical Characteristics for Lu_2O_3 Thin Films Fabricated by E-beam Deposition Method (2004)
  • Author(s): S.Ohmi, M.Takeda, H.Ishiwara, H.Iwai
  • Journal Title: Journal of The Electrochemical Society 151 Pages: G279-G283
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer (2004)
  • Author(s): H.Nohira, T.Shiraishi, K.Takahashi, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, T.Hattori
  • Journal Title: Applied Surface Science 234 Pages: 493-496
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer (2004)
  • Author(s): T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai
  • Journal Title: Microelectronic Engineering 72 Pages: 283-287
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Bulk electronic structure of Na_<0.35>CoO_2-1.3H_2O (2004)
  • Author(s): A.Chainani, T.Yokoya, Y.Takata, K.Tamasaku, M.Taguchi, T.Shimojima, N.Kamakura, K.Horiba, S.Tsuda, S.Shin, D.Miwa, Y.Nishino, T.Ishikawa, M.Yabashi, K.Kobayashi, H.Namatame, M.Taniguchi, K.Takada, T.Sasaki, H.Sakurai, E.Takayama-Muromachi
  • Journal Title: Physical Review B 69 Pages: 180508(R)-1-180508(R)-4
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Temperature dependence of the electronic states of Kondo semiconductor YbB_<12> (2004)
  • Author(s): Y.Takeda, M.Arita, M.Higashiguchi, K.Shimada, M.Sawada, H.Sato, M.Nakatake, H.Namatame, M.Taniguchi, F.Iga, T.Takabatake, Y.Takata, E.Ikenaga, M.Yabashi, D.Miwa, Y.Nishino, K.Tamasaku, T.Ishikawa, S.Shin, K.Kobayashi
  • Journal Title: Physica B 351 Pages: 286-288
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Hard X-ray photoemission spectroscopy of YbInCu_4 (2004)
  • Author(s): H.Sato, K.Shimada, M.Arita, Y.Takeda, M.Sawada, M.Nakatake, K.Yoshikawa, H.Namatame, Y.Takata, K.Kobayashi, E.Ikenaga, S.Shin, M.Yabashi, D.Miwa, Y.Nishino, K.Tamasaku, T.Ishikawa, K.Hiraoka, K.Kojima, M.Taniguchi
  • Journal Title: Physica B 351 Pages: 298-300
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] A probe of intrinsic valence band electronic structure : Hard x-ray photoemission (2004)
  • Author(s): Y.Takata, K.Tamasaku, T.Tokushima, D.Miwa, S.Shin, T.Ishikawa, M.Yabashi, K.Kobayashi, J.J.Kim, T.Yao, T.Yamamoto, M.Arita, H.Namatame, M.Taniguchi
  • Journal Title: Applied Physics Letters 84 Pages: 4310-4312
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Nature of the Well Screened State in Hard X-Ray Mn 2p Core-Level Photoemission Measurements of La_<1-x>Sr_xMnO_3 Films (2004)
  • Author(s): K.Horiba, M.Taguchi, A.Chainani, Y.Takata, E.Ikenaga, D.Miwa, Y.Nishino, K.Tamasaku, M.Awaji, A.Takeuchi, M.Yabashi, H.Namatame, M.Taniguchi, H.Kumigashira, M.Oshima, M.Lippmaa, M.Kawasaki, H.Koinuma, K.Kobayashi, T.Ishikawa, S.Shin
  • Journal Title: Physical Review Letters 93 Pages: 236401-1-236401-4
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Hybridization of Cr 3d-N 2p-Ga 4s in the wide band-gap diluted magnetic semiconductor Ga_<1-x>Cr_xN (2004)
  • Author(s): J.J.Kim, H.Makino, K.Kobayashi, Y.Takata, T.Yamamoto, T.Hanada, M.W.Cho, E.Ikenaga, M.Yabashi, D.Miwa, Y.Nishino, K.Tamasaku, T.Ishikawa, S.Shin, T.Yao
  • Journal Title: Physical Review B 70 Pages: 161315(R)-1-161315(R)-4
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Hard X-ray core-level photoemission of V_2O_3 (2004)
  • Author(s): N.Kamakura, M.Taguchi, A.Chainani, Y.Takata, K.Horiba, K.Yamamoto, K.Tamasaku, Y.Nishino, D.Miwa, E.Ikenaga, M.Awaji, A.Takeuchi, H.Ohashi, Y.Senba, H.Namatame, M.Taniguchi, T.Ishikawa, K.Kobayashi, S.Shin
  • Journal Title: Europhysics Letters 68 Pages: 557-563
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Hard X-ray Photoemission Spectroscopy of Temperature-Induced Valence Transition in EuNi_2(Si_<0.20>Ge_<0.30>)_2 (2004)
  • Author(s): K.Yamamoto, M.Taguchi, N.Kamakura, K.Horiba, Y.Takata, A.Chainani, S.Shin, E.Ikanaga, K.Mimura, M.Shiga, H.Wada, H.Namatame, M.Taniguchi, M.Awaji, A.Takeuchi, Y.Nishino, D.Miwa, T.Ishikawa, K.Kobayashi
  • Journal Title: Journal of Physical Society of Japan 73 Pages: 2616-2619
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Intrinsic Valence Band Study of Molecular-Beam-Epitaxy-Grown GaAs and GaN by High-Resolution Hard X-ray Photoemission Spectroscopy (2004)
  • Author(s): K.Kobayashi, Y.Takata, T.Yamamoto, J.J.Kim., H.Makino, K.Tamasaku, M.Yabashi, D.Miwa, T.Ishikawa, S.Shin, T.Yao
  • Journal Title: Japanese Journal of Applied Physics 43 Pages: L1029-L1031
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Valence Transition of YbInCu_4 Observed in Hard X-Ray Photoemission Spectra (2004)
  • Author(s): H.Sato, K.Shimada, M.Arita, K.Hiraoka, K.Kojima, Y.Takeda, K.Yoshikawa, M.Sawada, M.Nakatake, H.Namatame, M.Taniguchi, Y.Takata, E.Ikenaga, S.Shin, K.Kobayashi, K.Tamasaku, Y.Nishino, D.Miwa, M.Yabashi, T.Ishikawa
  • Journal Title: Physical Review Letters 93 Pages: 246404-1-246404-4
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Chemical and electronic structures of Lu_2O_3/Si interfacial transition layer (2003)
  • Author(s): H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, et al.
  • Journal Title: Applied Surface Science 216 Pages: 234-238
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Effect of surface treatment of Si substrates and annealing condition on high・k rare earth oxide gate dielectrics (2003)
  • Author(s): C.Ohshima, J.Taguchi, I.Kashiwagi, H.Yamamoto, S.Ohmi, H.Iwai
  • Journal Title: Applied Surface Science 216 Pages: 302-306
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems (2003)
  • Author(s): K.Kobayashi, M.Yabashi, Y.Takata, T.Tokushima, S.Shin, K.Tamasaku, D.Miwa, et al.
  • Journal Title: Applies Physics Letters 83 Pages: 1005-1007
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] High-energy photoemission spectroscopy of ferromagnetic Ga_1-_xMn_xN (2003)
  • Author(s): J.J.Kim, H.Makino, P.P.Chen, T.Hanada, T.Yao, K.Kobayashi, M.Yabashi, Y.Takata, et al.
  • Journal Title: Materials Science in Semiconductor Processing 6 Pages: 503-506
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Characterization of La_2O_3 and Yb_2O_3 Thin Films for High-k Gate Insulator Application (2003)
  • Author(s): S.Ohmi, C.Kobayashi, I.Kashiwagi, C.Ohshima, H.Ishiwara, H.Iwai
  • Journal Title: Journal of The Electrochemical Society 150 Pages: F134-F140
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry (2003)
  • Author(s): Y.Tsuchiya, M.Endo, M.Kurosawa, R.T.Tung, T.Hattori, et al.
  • Journal Title: Journal of Applied Physics 42 Pages: 1957-1961
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Chemical and electronic structures of Lu2O3/Si interfacial transition layer (2003)
  • Author(s): H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, T.Hattori
  • Journal Title: Applied Surface Science 216 Pages: 234-238
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics (2003)
  • Author(s): C.Ohshima, J.Taguchi, I.Kashiwagi, H.Yamamoto, S.Ohmi, H.Iwai
  • Journal Title: Applied Surface Science 216 Pages: 302-306
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems (2003)
  • Author(s): K.Kobayashi, M.Yabashi, Y.Takata, T.Tokushima, S.Shin, K.Tamasaku, D.Miwa, T.Ishikawa, H.Nohira, T.Hattori, Y.Sugita, O.Nakatsuka, A.Sakai, S.Zaima
  • Journal Title: Applied Physics Letters 83 Pages: 1005-1007
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] High-energy photoemission spectroscopy of ferromagnetic Ga_<1-x>Mn_xN (2003)
  • Author(s): J.J.Kim, H.Makino, P.P.Chen, T.Hanada, T.Yao, K.Kobayashi, M.Yabashi, Y.Takata, T.Tokushima, D.Miwa, K.Tamasaku, T.Ishikawa, S.Shin, T.Yamamoto
  • Journal Title: Materials Science in Semiconductor Processing 6 Pages: 503-506
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry (2003)
  • Author(s): Y.Tsuchiya, M.Endo, M.Kurosawa, R.T.Tung, T.Hattori, S.Oda
  • Journal Title: Journal of Applied Physics 42 Pages: 1957-1961
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] High Resolution Hard X-ray Photoemission using Synchrotron Radiation as an Essential Tool for Characterization of Thin Solid Films
  • Author(s): J.J.Kim, E.Ikenaga, M.Kobata, A.Takeuchi, M.Awaji, H.Makino, P.P.Chen, A.Yamamoto, T.Matsuoka, D.Miwa, Y.Nishino, T.Yamamoto, T.Yao, K.Kobayashi
  • Journal Title: Applied Surface Science (to be published)
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard x-ray photoelectron spectroscopy at SPring-8
  • Author(s): T.Hattori, H.Nohira, K.Azuma, K.W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, Y.Sugita, E.Ikenaga, K.Kobayashi, Y.Takata, H.Kondo, S.Zaima
  • Journal Title: Int.J.High Speed Electronics and Systems (to be publised)
  • Description: 「研究成果報告書概要(欧文)」より