2005 Fiscal Year Final Research Report Summary
Study of self assembled monolayer field effect transistors using the shadow mask evaporation technique
| Project/Area Number |
15310103
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
MAJIMA Yutaka Tokyo Institute of Technology, Graduate School of Science and Engineering, Associate Professor, 大学院・理工学研究科, 助教授 (40293071)
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| Project Period (FY) |
2003 – 2005
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| Keywords | self-assembled monolayer / monolayer / negative difference conductance / conductance switching / molecular nano-device / scanning probe microscopy / SAM / shadow mask |
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| Research Abstract |
Nanometer scale Au/4,4'-di(ethylphenyl)-5'-nitro-1-thioacetylbenzene self-assembled monolayer (nitro-OPE SAM) /Au junctions have been fabricated by using the shadow mask evaporation technique with an air-bridge structure based on EB lithography. 29 Au/nitro-OPE SAM/Au devices work within 324 devices. Negative differential conductance (NDC) in current - voltage characteristics and conductance switching in current - time characteristics have been observed. We also report conductance switching of single nitro-OPE molecule in alkanethiol SAMS by using sequential images by scanning tunneling microscopy.
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