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2004 Fiscal Year Final Research Report Summary

Low temperature and High-pressure Raman Study of Superconductivity and Cage-structure Stability of Silicon Clathrates

Research Project

Project/Area Number 15340095
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Condensed matter physics I
Research InstitutionGifu University

Principal Investigator

SHIMIZU Hiroyasu  Gifu University, Faculty of Engineering, Professor, 工学部, 教授 (80023258)

Co-Investigator(Kenkyū-buntansha) SASAKI Shigeo  Gifu University, Faculty of Engineering, Assoc.Professor, 工学部, 助教授 (30196159)
KUME Tetsuji  Gifu University, Faculty of Engineering, Assistant, 工学部, 助手 (30293541)
Project Period (FY) 2003 – 2004
KeywordsSilicon Clathrates / High-pressure Raman Scattering / Superconductivity / Guest-Host Interactions / Cage Structures / Guest Vibration
Research Abstract

Silicon clathrates are covalent bonded cage-like crystals composed of face-sharing Si_<20>, Si_<24>, and Si_<28> polyhedra in which guest atoms are occupied. These compounds continue to attract much attention as new superconductors, unusual wide-bandgap semiconductor, and a new class of thermo-electric materials. Vibrational properties of guests and host lattice, and the guest-host interactions are studied by high-pressure Raman spectroscopy.
High-pressure Raman scattering of type-I silicon clathrates, Ba_8Si_<46>, K_8Si_<46>, and I_8Si_<44>I_2, and type-III Ba_<24>Si_<100> were measured up to about 30 GPa. Low-frequency vibrational modes associated with Ba, K, and I atoms isnside two or three kinds of cages were found around 40-110 cm^<-1>. The silicon framework Raman bands were also observed around 110-450 cm^<-1>. Pressure-induced phase transitions occurred at high pressures. They are closely related to the motions of guest atoms and the guest-host interactions. At higher pressures, the pressure-induced amorphized irreversible transitions were found, which were discussed by comparing the amorphous silicon at high pressures.
By considering these results and high-pressure phase transitions of Si clathrates, we investigate their characteristics depending on guests and cage-structures, and the stability of cage-structures.

  • Research Products

    (10 results)

All 2005 2004 2003

All Journal Article (10 results)

  • [Journal Article] High-pressure Raman study of Ba deped type III silicon clathrate Ba_<24>Si_<100> up to 27 GPa2005

    • Author(s)
      H.Shimizu et al.
    • Journal Title

      Phys.Rev.B 71

      Pages: 094108-1-094108-4

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] ラマン分光によるシリコンクラスレートのゲストおよびホストの振動と高圧相転移の研究2005

    • Author(s)
      清水宏晏ら
    • Journal Title

      日本物理学会誌 60(7月号)

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High-pressure Raman study of Ba doped type III silicon clathrate Ba_<24>Si_<100> up to 27 GPa2005

    • Author(s)
      H.Shimizu et al.
    • Journal Title

      Phys.Rev.B 71 (No.9)

      Pages: 094108-1-094108-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High-pressure Raman study of potassium doped silicon clathrate K_8Si_<46>2004

    • Author(s)
      T.Kume et al.
    • Journal Title

      Phys.Rev.B 70

      Pages: 052101-1-052101-4

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] シリコンクラスレート化合物の超高圧ラマン散乱2004

    • Author(s)
      久米徹二
    • Journal Title

      高圧力の科学と技術 14

      Pages: 167-172

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High-pressure Raman study of potassium doped silicon clathrate K_8Si_<46>2004

    • Author(s)
      T.Kume et al.
    • Journal Title

      Phys.Rev.B 70 (No.5)

      Pages: 052101-1-052101-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High-pressure Raman Study of Ba Doped Silicon Clathrate2003

    • Author(s)
      T.Kume et al.
    • Journal Title

      Phys.Rev.Lett. 90

      Pages: 155503-1-155503-4

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High-pressure Raman study of the iodine-doped silicon clathrate I_8Si_<44>I_22003

    • Author(s)
      H.Shimizu et al.
    • Journal Title

      Phys.Rev.B 68

      Pages: 212102-1-212102-4

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High-Pressure Raman Study of Ba Doped Silicon Clathrate2003

    • Author(s)
      T.Kume et al.
    • Journal Title

      Phys.Rev.Lett. 90 (No.15)

      Pages: 155503-1-155503-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High-pressure Raman study of the iodine-doped silicon clathratre I_8Si_<44>I_22003

    • Author(s)
      H.Shimizu et al.
    • Journal Title

      Phys.Rev.B 68 (No.21)

      Pages: 212102-1-212102-4

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2006-07-11  

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