2005 Fiscal Year Final Research Report Summary
Control of crystallization of solid He by acoustic radiation pressure and novel dynamics of quantum interface
| Project/Area Number |
15340114
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics II
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
NOMURA Ryuji Tokyo Institute of Technology, Department of Science and Engineering, Research Associate, 大学院・理工学研究科, 助手 (00323783)
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| Co-Investigator(Kenkyū-buntansha) |
OKUDA Yuichi Tokyo Institute of Technology, Department of Science and Engineering, Professor, 大学院・理工学研究科, 教授 (50135670)
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| Project Period (FY) |
2003 – 2005
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| Keywords | Solid 4He / Ultrasound / SUperfluid / Crystal growth / Facet / Step / Acoustic radiation pressure / Quantum solids |
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| Research Abstract |
We observed the very fast growth of the c-facet of a S^4$He crystal induced by acoustic waves. The growth velocity cannot be explained by the spiral growth model for the known values of the step mobility. We developed a new crystal growth mechanism of the facet by high power acoustic waves. Considering the first order effect of the oscillating pressure of the acoustic wave, steps are accelerated to the order of the sound velocity. Collisions of such high speed steps can induce the multiplication of steps as Parshin and Tsymbalenko suggested and lead to the larger step density than that of the spiral growth. This model reproduces the observed power and temperature dependence well and also has a quantitative agreement with the experiment.
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