• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2005 Fiscal Year Final Research Report Summary

Controlling of UV light by using III-nitride based photonic crystals with nano-antenna

Research Project

Project/Area Number 15360008
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionMie University

Principal Investigator

HIRAMATSU Kazumasa  Mie University, Department of Electrical and Electronic Engineering, Professor, 工学部, 教授 (50165205)

Co-Investigator(Kenkyū-buntansha) MIYAKE Hideto  Mie University, Department of Electrical and Electronic Engineering, Associate Professor, 工学部, 助教授 (70209881)
MOTOGAITO Atsushi  Mie University, Department of Electrical and Electronic Engineering, Research Associate, 工学部, 助手 (00303751)
Project Period (FY) 2003 – 2005
KeywordsIII-nitride semiconductors / photonic crystals / nano antenna / ultraviolet light / gratings / electron beam lithography / reactive ion etching / AlGaN epitaxial growth
Research Abstract

Photonic crystals have the distribution of index which is as same as light wavelength or smaller than light wavelength. Its periodicity is able to control optical constant such as transmission, reflectance and absorption, or polarization. In this research, the fabrication of photonic crystas with III-nitride semiconductors, which is transparent for visible and ultraviolet and studied on light emitting devices or detectors, and the characteristics of transmission, reflectance, absorption and polarization are cleared. Furthermore, the effect of controlling of UV light is confirmed by UV detectors.
Under the backgrounds and purposes, we obtained the following results.
1. Fabrication of nanotips of GaN and SiO_2 by using reactive ion etching and controlling of visible light
2. Fabrication of pyramid structure of Si by using reactive ion etching
3. Fabrication of stripe structure of AlN and crystal growth of high quality AlGaN epitaxial layers
4. Characterization of GaN and AlGaN UV detectors
5. Fabrication of nano order pattern by using electron beam lithography
6. Fabrication of gratings on polymer films by using electron beam lithography and plane light emitting of LED
Based on these results, we believe that high performance UV LED and UV detectors with controlling UV light can be realized.

  • Research Products

    (26 results)

All 2006 2005 2004 2003

All Journal Article (26 results)

  • [Journal Article] Enhance emission efficiency of InGaN films with Si doping2006

    • Author(s)
      Dabing Li
    • Journal Title

      Physica Status Solidi (C) (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Fabrication of thick AlN film by low pressure hydride vaporphase epitaxy2006

    • Author(s)
      Yu-Huai Liu
    • Journal Title

      Physica Status Solidi (c) (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] n-type conductivity control of AlGaN with high Al mole fraction2006

    • Author(s)
      Takuya Katsuno
    • Journal Title

      Physica Status Solidi (c) (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Influence of Si doping on the optical and structural properties of InGaN films2006

    • Author(s)
      Dabing Li
    • Journal Title

      Journal of Crystal Growth 290

      Pages: 374-378

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Enhancement of blue emission from Mg-doped GaN activated at low temperature in O_2/N_2 mixture2006

    • Author(s)
      Dabing Li
    • Journal Title

      Physica Status Solidi (c) (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] ファセット制御技術による高品質窒化物半導体の作製2006

    • Author(s)
      三宅秀人
    • Journal Title

      応用物理 第75巻 第4号

      Pages: 467-472

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Enhanced emission efficiency of InGaN films with Si doping2006

    • Author(s)
      D.Li et al.
    • Journal Title

      Physica Status Solidi (c) (to be published)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Fabrication of thick MN film by low pressure hydride vaporphase epitaxy2006

    • Author(s)
      Y.H.Liu et al.
    • Journal Title

      Physica Status Solidi (c) (to be published)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] n-type conductivity control of AlGaN with high Al mole fraction2006

    • Author(s)
      T.Katsuno et al.
    • Journal Title

      Physica Status Solidi (c) (to be published)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Influence of Si doping on the optical and structural properties of InGaN films2006

    • Author(s)
      D.Li et al.
    • Journal Title

      Journal of Crystal Growth 290

      Pages: 374-378

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Enhancement of blue emission from Mg-doped GaN activated at low temperature in O_2/N_2 mixture2006

    • Author(s)
      D.Li et al.
    • Journal Title

      Physica Status Solidi (c) (to be published)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Fabrication of high-quality nitride semiconductors by facet control technique2006

    • Author(s)
      H.Miyake, K.Hiramatsu
    • Journal Title

      OYO BUTURI (in Japanese) Vol.75, No.48

      Pages: 467-472

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Freestanding GaN substrate by advanced FACELO technique with masking side-facets2005

    • Author(s)
      Shinya Bohyama
    • Journal Title

      Japanese Journal of Applied Physics Vol.44

      Pages: L24-L26

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth of thick AlN layer by hydride vapor phase epitaxy2005

    • Author(s)
      Yu-Huai Liu
    • Journal Title

      Japanese Journal of Applied Physics Vol.44

      Pages: L505-L507

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High quality AlGaN/AlN superlattices grown on AlN/sapphire template by MOVPE2005

    • Author(s)
      Yu-Huai Liu
    • Journal Title

      Institute of Physics Conference Series No.184

      Pages: 247-250

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer2005

    • Author(s)
      Akira Ishiga
    • Journal Title

      Material Research Society Symposium Proceedings Vol.831

      Pages: E3.11.1-E3.11.6

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrates2005

    • Author(s)
      Yasuhiro Shibata
    • Journal Title

      Material Research Society Symposium Proceedings Vol.831

      Pages: E3.12.1-E3.12.6

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Freestanding GaN substrate by advanced FACELO technique with masking side-facets2005

    • Author(s)
      S.Bohyama et al.
    • Journal Title

      Japanese Journal of Applied Physic Vol.44

      Pages: L24-L26

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth of thick AlN layer by hydride vapor phase epitaxy2005

    • Author(s)
      Y.H.Liu et al.
    • Journal Title

      Japanese Journal of Applied Physics Vol.44

      Pages: L505-L507

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High quality AlGaN/AlN superlattices grown on AlN/sapphire template by MOVPE2005

    • Author(s)
      Y.H.Liu et al.
    • Journal Title

      Institute of Physics Conference Series No.184

      Pages: 247-250

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer2005

    • Author(s)
      A.Ishiga et al.
    • Journal Title

      Material Research Society Symposium Proceedings Vol.831

      Pages: E3.11.1-E3.11.6

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrates2005

    • Author(s)
      Y.Shibata et al.
    • Journal Title

      Material Research Society Symposium Proceedings Vol.831

      Pages: E3.12.1-E3.12.6

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Characterization of III-nitride base Schottky detectors with wide detectable wavelength range (360-10 nm) using Synchrotron Radiation2004

    • Author(s)
      Atsushi Motogaito
    • Journal Title

      Material Research Society Symposium Proceedings Vol.798

      Pages: 53-58

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Characterization of III-nitride based Schottky detectors with wide detectable wavelength range (360-10 nm) using Synchrotron Radiation2004

    • Author(s)
      Atsushi Motogaito et al.
    • Journal Title

      Material Research Society Symposium Proceedings Vol.798

      Pages: 53-58

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] High performance of Schottky detectors (265-100 nm) using n-Al_<0.5>Ga_<0.5>N on AlN epitaxial layer2003

    • Author(s)
      Hideto Miyake
    • Journal Title

      Physica Status Solidi (a) Vol.200, No.1

      Pages: 151-154

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] High performance of Schottky detectors (265-100 nm) using n-Al_<0.5>Ga_<0.5>N on AlN epitaxial layer2003

    • Author(s)
      H.Miyake et al.
    • Journal Title

      Physica Status Solidi (a) Vol.200, No1

      Pages: 151-154

    • Description
      「研究成果報告書概要(欧文)」より

URL: 

Published: 2007-12-13  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi