2004 Fiscal Year Final Research Report Summary
Two dimensional crystallization of ferritin protein for nano-scale process in semiconductor fabrication
| Project/Area Number |
15360013
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nara Institute of Science and Technology |
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Principal Investigator |
URAOKA Yukiharu Nara Institute of Science and Technology, Graduate School of Materials Science, Associate Professor, 物質創成科学研究科, 助教授 (20314536)
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| Co-Investigator(Kenkyū-buntansha) |
YAMASHITA Ichiro Matsushita Advanced Technology Research Laboratories, Senior Engineer, 先端技術研究所, 主幹技師
FUYUKI Takashi Nara Institute of Science and Technology, Graduate School of Materials Science, Professor, 物質創成科学研究科, 教授 (10165459)
HATAYAMA Tomoaki Nara Institute of Science and Technology, Graduate School of Materials Science, Assistant Professor, 物質創成科学研究科, 助手 (90304162)
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| Project Period (FY) |
2003 – 2004
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| Keywords | Bio-nano process / ferritin protein / bottom-up / self assemble / bio-mineralization / plasma treatment |
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| Research Abstract |
Development of biotechnology has been remarkable, which enables us to fabricate nanoscale structures using biomolecules as nanoblocks. A combination of biotechnology and semiconductor technology is emerging as a promising candidate for enabling a breakthrough in the fabrication of advanced electronic devices. The main features of biotechnology from a nanotechnology point of view are as follows : Size distribution is extremely small on the molecular scale. Biomolecules can form nanostructures in a self-assembling manner, which is an essential part of the bottom-up fabrication technology. Protein has the ability to biomineralize inorganic materials at its surface. Utilizing these characteristics, we propose a novel bottom-up method for fabricating nanostructure with a very small size distribution.
We have a floating nano-dot gate metal-oxide-semiconductor field effect transistor(MOSFET). The floating nano-dots gate MOSFET is expected to be promising candidate component for next-generation memory such as flash memory. It is required that the floating nanod-dots have a small size distribution and should take the form of a high-density monolayer. We adopted the cage-shaped protein ferritin to satisfy these requirements. Ferritin has a protein shell, its outer and inner diameters are 12 nm and 7 nm, respectively, and it has fairly high thermal and pH stabilities compared with other proteins. The inner cavity can accommodate an iron oxide core (5Fe_2O_3・9H_2O). Therefore, iron oxide nano-dots with small size distribution can be artificially synthesized with ferritin molecules. It has also demonstrated that ferritin molecules can form a large two-dimensional crystal that is a high-density monolayer. Combining these characteristics, we fabricated a monolayer of ferritin with iron oxide cores.
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[Journal Article] Electron Injection into Si nano dot fabricated by Side-wall type plasma enhanced chemical vapor deposition2005
Author(s)
Kazunori Ichikawa, Masato Mukai, P.Punchaipetch, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki, Eiji Takahashi, Tsukasa Hayashi, Kiyoshi Ogata
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Journal Title
IEEE/International Meeting for Future Electron Devices, Kansai P-D7
Pages: 97
Description
「研究成果報告書概要(欧文)」より
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