2005 Fiscal Year Final Research Report Summary
Spin-dependent transmission of highly polarized electrons through ferromagnet/semiconductor interfaces
| Project/Area Number |
15360023
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Daido Institute of Technology |
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Principal Investigator |
SAKA Takashi Daido Institute of Technology, College of Engineering, Professor, 工学部, 教授 (20115570)
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| Co-Investigator(Kenkyū-buntansha) |
JIMBO Mutsuko Daido Institute of Technology, College of Engineering, Professor, 工学部, 教授 (00115677)
HORINAKA Hiromichi Osaka Prefecture University, College of Engineering, Professor, 工学研究科, 教授 (60137239)
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| Project Period (FY) |
2003 – 2005
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| Keywords | spin polarization / spin filter / zincblend structure / ferromagnetic materials / photoelectron / circular polarization |
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| Research Abstract |
A spin polarized electron beam emitted from a GaAs photocathode was injected into a thin ferromagnetic layer deposited on the GaAs photocathode and the spin-dependence of the transmission through the ferromagnet/semiconductor interface was investigated. Polarized electrons with opposite spin-polarizations were excited by irradiating with circularly polarized photons of opposite polarity. The ferromagnetic film was a 3nm thick layer of GdTbFe, and a thin oxide layer (2nm) was inserted between the film and the photocathode, which resulted in tunneling transmission of the electrons. After deposition, the film was magnetized in the direction perpendicular to the surface. Photo-currents with opposite spin polarizations were measured at room temperature. For electrons with the same polarization as that of the ferromagnetic films, the current was enhanced, while, on the other hand, the current was reduced in the case of the opposite polarization. In the present experiment, a p-GaAs substrate was used as the photocathode, and therefore the polarization of the photoelectrons was estimated as approximately 30〜35%. If a photocathode with a GaAs/GaAsP strained superlattice is used, a much clearer dependence is anticipated because polarization of more than 85% is expected.
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[Journal Article] Highly polarized electrons from GaAs-GaAsP and InGaAs-AlGaAs strained-layer supperlattice photocathodes2005
Author(s)
T.Nishitani, T.Nakanishi, M.Yamamoto, S.Okumi, F.Furuta, M.Miyamoto, M.Kuwahara, N.Yamamoto, K.Naniwa, O.Watanabe, Y.Takeda, H.Kobayakawa, Y.Takashima, H.Horinaka, T.Matsuyama, K.Togawa, T.Saka, T.Kato, Y.Baba
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Journal Title
J.Appl.Phys. 97
Pages: 094907-1-094907-6
Description
「研究成果報告書概要(欧文)」より
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