2005 Fiscal Year Final Research Report Summary
Low-temperature orientation-control of SiGe quasi-single crystal on glass and its device application
| Project/Area Number |
15360169
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
MIYAO Masanobu Kyushu University, Department of Electronics, Professor, 大学院・システム情報科学研究院, 教授 (60315132)
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| Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh Kyushu University, Department of Electronics, Associate Professor, 大学院・システム情報科学研究院, 助教授 (20274491)
KENJO Atsushi Kyushu University, Department of Electronics, Research Associate, 大学院・システム情報科学研究院, 助手 (20037899)
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| Project Period (FY) |
2003 – 2005
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| Keywords | electron device / large-scale integrated circuit / display / silicon / crystal growth |
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| Research Abstract |
Low temperature orientation control of SiGe quasi-single crystals and its device application have been investigated.
The solid-phase crystallization of a-Si/a-Ge/glass and a-Si/a-Ge/a-Si/glass stacked structures was studied systematically. It was found that two-dimensional nucleation was selectively induced by inserting Ge layers thicker than the critical thickness at the interface between the a-Si layer and the glass substrate. This is an important finding for orientation control of SiGe quasi-single crystals.
In addition, a novel device structure, suitable for low-temperature processing, was studied, and the fabrication process of the Schottky source/drain structure transistor was established at a low-temperature (≦450℃). Moreover, a good transistor operation of transistors fabricated on the glass substrate was demonstrated.
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Research Products
(12 results)
