2005 Fiscal Year Final Research Report Summary
Development of High-Speed Dry Coating of Cu-Wiring Using Clean Metal-Arc Plasma
| Project/Area Number |
15360189
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
SAKAKIBARA Tateki Toyohashi University of Technology, Electrical and Electronic Engineering, Professor, 工学部, 教授 (10023243)
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| Co-Investigator(Kenkyū-buntansha) |
TAKIKAWA Hirofumi Toyohashi University of Technology, Electrical and Electronic Engineering, Associate professor, 工学部, 助教授 (90226952)
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| Project Period (FY) |
2003 – 2005
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| Keywords | Cu wiring / Dry process / Vacuum arc deposition / Filtered arc with magnetic transportation / T-FAD / Multi-source gun / Plasma scanner / Large area coating |
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| Research Abstract |
The purpose of this project is that the development of principal technology of Cu-wiring film formation for LSI device tip by fry process using cathodic vacuum arc deposition, instead of current wet process of electroplating. In the cathodic vacuum arc deposition, solid metal is used as cathode of vacuum arc, the metal was directly evaporated by the cathode spot, and the film is plated by the ions in the metal vapor plasma without any gas. However ; the micron-order particles of cathode materials, so-called droplets, are also emitted from the cathode spot by its explosive phenomenon. The droplets have the film decreased unilbrmity and may block the wiring trench. The droplet should be removed from the processing vacuum are plasma. In this project, the vacuum arc deposition system with filtration of the droplets from the plasma using the technique of the arc plasma magnetically transporting through a bent duct. The principal outcomes are as follows.
1st year : A new filtered arc depositi
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on system with Y shape filter duct (Y-FAD) was roughly designed, in which the deposition speed was expected to be three times higher than that in a current T-shape filtered arc deposition system (T-FAD). In order to realize the large area deposition, high-throughput plasma-beam scanner using magnetic field was designed and made. The 100 mm diameter deposition with well uniformity was attained with the scanner.
2nd year: The detail of Y-FAD was deigned and partly manufactured. In order to improve the deposition rate, the method of applying the bias voltage to the plasma transportation duct (=filter duct) was examined. As a result, when the suitable duct bias was applied, it was found that the deposition rated increased twice to three times.
Last year : The Y-FAD with two cathode evaporating sources has finished building up and its performance was examined. As a result, it was revealed the new Y-FAD can provide enough high-deposition rate and wide-deposition area. Furthermore, it was found that the substrate temperature increased quickly due to high-speed deposition and the substrate needed to be cooled. Less
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