2005 Fiscal Year Final Research Report Summary
Study on the Development of InSb Radiation Detectors with High Efficicency and High Energy Resolution at Low Operating Temperature
| Project/Area Number |
15360505
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nuclear engineering
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| Research Institution | Kyoto University |
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Principal Investigator |
KANNO Ikuo Kyoto University, Graduate School of Engineering, Associate Professor, 工学研究科, 助教授 (50234167)
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| Co-Investigator(Kenkyū-buntansha) |
YAMANA Hajimu Research Reactor Institute, Professor, 原子炉実験所, 教授 (30283683)
SUGIURA Osamu Chiba Institute of Technology, Professor, 工学部, 教授 (10187643)
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| Project Period (FY) |
2003 – 2005
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| Keywords | InSb / low temperature detector / photon detector / gamma rays / X-rays / crystal growth |
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| Research Abstract |
Crystal growth of InSb was carried out. In the previous fiscal year, we have got a single crystal with the crystal velocity of 0.47 mm/h. The employed raw materials were In and Sb with their purities greater than 99.9999 %. After the crystal growth, we have cut the crystal into wafers. For the three wafers at the top, middle and end of the crystal were examined for stoichiometry, as well as commercial InSb wafers. Also, electric properties such as resistivity, carrier concentration and Hall mobility were measured for these wafers as a function of operating temperature. From these measurements, the electric properties of InSb were found more sensitive to the impurities than stoichiometry.
For the measurements of radiation, undoped InSb detectors with 1 mm diameter were fabricated. With this InSb detector, gamma ray emitted by Ba-133 were detected and the energy peak of 81 keV and its escape peak, 55 keV, were observed. The event ratio of the peaks of 55 keV to 81 keV were calculated by the simulation code EGS4 with changing the thickness of the depletion layer of InSb detector. From this simulation, the effective thickness of the depletion layer was determined as 3 micro-m.
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