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2005 Fiscal Year Final Research Report Summary

High efficient photoluminescence from isoelectric impurities in quantum confined Si nanocrystals

Research Project

Project/Area Number 15510091
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Nanostructural science
Research InstitutionKobe University

Principal Investigator

FUJII Minoru  Kobe University, Faculty of Engineering, associate Professor, 工学部, 助教授 (00273798)

Co-Investigator(Kenkyū-buntansha) HAYASHI Shinji  Kobe University, Faculty of Engineering, Professor, 工学部, 教授 (50107348)
Project Period (FY) 2003 – 2005
Keywordsluminescence / silicon / nanocrystal / doping
Research Abstract

The purpose of this work is to form an isoelectric trap in Si nanocrystals by simultaneously doping n and p type impurities. We have developed a method to prepare P and B codoped Si nanocrystals, and studied the optical properties in detail as functions of P and B concentration. The photoluminescence intensity of carrier-compensated Si nanocrystals was larger than that of either n or p type impurity doped Si nanocrystals, and sometimes it was larger than that of pure Si nanocrystals. Furthermore, the tunable range of photoluminescence energy is extended to below the bandgap energy of bulk Si crystals. By properly controlling the impurity concentration and size of Si nanocrystals, the photoluminescence energy was controlled from 0.9eV to 1.5eV without losing the intensity so much. The carrier compensated Si nanocrystals also act as an efficient photo-sensitizer for rare-earth ions. It has been demonstrated that the carrier compensated Si nanocrystals can excite Er ions placed nearby quite efficiently. The photoluminescence intensity of Er ions in carrier-compensated Si nanocrystals was larger than that in pure Si nanocrystals.
Although we could successfully demonstrate that the formation of isolectric centers in Si nanocrystals is possible and these nanocrystals exhibit characteristic features, which are absent in pure Si nanocrystals, the electronic structures of impurity doped Si nanocrystals are still not fully clarified. In order to extend the functionality of Si nanocrystals and explore the applications, deeper understanding of the electronic structures is indispensable, and will be a target of future research.

  • Research Products

    (16 results)

All 2005 2004 2003

All Journal Article (16 results)

  • [Journal Article] Photoluminescence from Impurity Co-doped and Compensated Si Nanocrystals2005

    • Author(s)
      Minoru Fujii
    • Journal Title

      Applied Physics Letters 87・21

      Pages: 200919-1-211919-3

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Photoluminescence from Si Nanocrystals Embedded in SiO_xN_y Thin Films2005

    • Author(s)
      Kimihisa Matsumoto
    • Journal Title

      Japanese Journal of Applied Physics 44・50

      Pages: 522-529

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Modification of energy transfer from Si Nanocrystals to Er^3+2005

    • Author(s)
      Toshihiro Nakamura
    • Journal Title

      Physical Review B 72・23

      Pages: 235412-1-235412-6

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Photoluminescence from Impurity Co-doped and Compensated Si Nanocrystals2005

    • Author(s)
      Minoru, Fujii
    • Journal Title

      Applied Physics Letters 87-21

      Pages: 211919-1-211919-3

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Photoluminescence from Si Nanocrystals Embedded in SiO_xN_y Thin Films2005

    • Author(s)
      Kimihisa, Matsumoto
    • Journal Title

      Japanese Journal of Applied Physics 44-50

      Pages: 522-529

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Modification of energy transfer from Si nanocrystals to Er^<3+>2005

    • Author(s)
      Toshihiro, Nakamura
    • Journal Title

      Physical Review B 72・23

      Pages: 235412-1-235412-6

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Coexistence of two different energy transfer processes SiO_2 films containing Si nanocrystals and Er2004

    • Author(s)
      Minoru Fujii
    • Journal Title

      Journal of Applied Physics 95・1

      Pages: 272-280

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities2004

    • Author(s)
      Minoru Fujii
    • Journal Title

      Applied Physics Letters 85・7

      Pages: 1158-1160

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Interaction between Er ions and shallow impurities in Si nanocrystals within SiO_22004

    • Author(s)
      Kenji Imakita
    • Journal Title

      Physical Review B 71・11

      Pages: 115440-1-115440-7

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Spectrally resolved energy transfer from excitons in Si nanocrystals to Er ions2004

    • Author(s)
      Kenji Imakita
    • Journal Title

      Physical Review B 71・19

      Pages: 193301-1-193301-4

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Coexistence of two different energy transfer processes SiO_2 films containing Si nanocrystals and Er2004

    • Author(s)
      Minoru, Fujii
    • Journal Title

      Journal of Applied Physics 95-1

      Pages: 272-280

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities2004

    • Author(s)
      Minoru, Fujii
    • Journal Title

      Applied Physics Letters 85-7

      Pages: 1158-1160

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Interaction between Er ions and shallow impurities in Si nanocrystals within SiO_22004

    • Author(s)
      Kenji, Imakita
    • Journal Title

      Physical Review B 71-11

      Pages: 115440-1-115440-7

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Spectrally resolved energy transfer from excitons in Si nanocrystals to Er ions2004

    • Author(s)
      Kenji, Imakita
    • Journal Title

      Physical Review B 71-19

      Pages: 193301-1-193301-4

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals2003

    • Author(s)
      Minoru Fujii
    • Journal Title

      Journal of Applied Physics 94・3

      Pages: 1990-1995

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals2003

    • Author(s)
      Minoru, Fujii
    • Journal Title

      Journal of Applied Physics 94-3

      Pages: 1990-1995

    • Description
      「研究成果報告書概要(欧文)」より

URL: 

Published: 2007-12-13  

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