2004 Fiscal Year Final Research Report Summary
Novel fabrication techniques for pillar semiconductor quantization
| Project/Area Number |
15560001
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Hirosaki University |
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Principal Investigator |
MASHITA Masao Hirosaki University, Faculty of Science and Technology, Professor, 理工学部, 教授 (30292139)
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| Co-Investigator(Kenkyū-buntansha) |
AZUHATA Takashi Hirosaki University, Faculty of Science and Technology, Associate Professor, 理工学部, 助教授 (20277867)
NAKAZAWA Hideki Hirosaki University, Faculty of Science and Technology, Assistant, 理工学部, 助手 (90344613)
SASAKI Masahiro University of Tsukuba, Institute of Materials Science, Associate Professor, 物質工学系, 助教授 (80282333)
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| Project Period (FY) |
2003 – 2004
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| Keywords | molecular beam epitaxy / lattice mismatch / single quantum well / GaAs(111)A / GaAs / InAs quantum well / superlattice / photoluminescence |
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| Research Abstract |
We have studied GaAs/InAs/GaAs single quantum well (SQW) structures grown on GaAs substrates by molecular beam epitaxy (MBE). We have made the first observation of the PL spectra from ultrathin InAs/GaAs SQWs grown on GaAs (111)A substrates. The 10K photoluminescence(PL) spectra exhibit strong and narrow peaks. When the thickness of InAs wells increases from 1 to 6 ML, the PL peak energy at 10 K gradually decreases from 1.47 to 1.36 eV, the FWHM becomes wider and the intensity abruptly decreases and disappears for InAs wells thicker than 9ML. The results indicate that the PL intensity from the SQW is also related to the quality of the GaAs cap layer as well as the InAs wells. The PL peak energies significantly exceed calculated values. This discrepancy may be explained by the diffusion into GaAs of In atoms at the GaAs/InAs interfaces.
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