2004 Fiscal Year Final Research Report Summary
Study on device technology of ZnTe-based materials for fabrication of pure-green LED with high brightness
| Project/Area Number |
15560010
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Saga University |
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Principal Investigator |
OGAWA Hiroshi Saga University, Synchrotron light research center, professor, シンクロトロン光応用研究センター, 教授 (10039290)
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| Project Period (FY) |
2003 – 2004
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| Keywords | ZnTe / ZnMgTe / pure-green LED |
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| Research Abstract |
In this study, we have investigated p-type or n-type doping and characterization of ZnTe and ZnMgTe in order to fabricate pure-green LED with high brightness. We have clarified detailed behaviors for doping of ZnTe using tris-dimethylaminophosphorus, n-butylchloride or n-butyliodide. in a metalorganic vapor phase epitaxial growth system. In addition, Al thermal diffusion into p-type ZnTe has been carried out in order to attain n-type layer, which leads to low cost LED. Highly conductive p-type ZnTe and ZnMgTe bulk crystals for substrate have been obtained successfully by using vertical Bridgman method, and good ohmic contacts have been developed. By using these results, we have succeeded in fabricating ZnTe based LEDs.
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