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2005 Fiscal Year Final Research Report Summary

Developments of semiconductor generators made from abundant and safe materials for the establishment of a distributed electric supply system

Research Project

Project/Area Number 15560273
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionShizuoka University

Principal Investigator

TATSUOKA Hirokazu  Shizuoka University, Faculty of Engineering, Professor, 工学部, 教授 (40197380)

Project Period (FY) 2003 – 2005
KeywordsSilicide / Solar cell / Photo-thermal generator / Thermoelectric devices / Epitaxy / Liquid phase growth / Energy / Environment
Research Abstract

Development of semiconductor generators made from abundant and safe materials for the establishment of a distributed electric supply system has been proposed, and the fabrications of semiconducting devices, namely, solar cell, photo-thermal generator and thermoelectric devices, have been demonstrated. The conventional silicide semiconductors and new silicide materials have been synthesized and characterized. Moreover, the materials were applied to the fabrications of these devices mentioned above.
The b-FeSi_2 thin films were grown on insulating substrates, and the structural property of the films has been characterized. The defect structure of b-FeSi_2 layers on FeSi substrates grown from a molten salt method with vacuum-free system was clarified. It is found that the ITO/b-FeSi_2 structure shows the diode characteristics.
Mg_2Si bulk crystals were grown by the exposure of Si substrates to Mg vapor at the elevated temperature, and the structural property of the crystals has been characterized. It is found that the successful growth of the crack-free crystals without any inclusion of species in the crystals talks place. The thermoelectric generators using the Mg_2Si were fabricated, and the simple fabrication procedure has been developed. The b-FeSi_2/FeSi thermoelectric generator has also developed.
MnSi_<1.7> thin films were grown by the heat treatment of Si substrates in MnCl_2 vapor. Using the thin film growth technique, the MnSi_<1.7>/Si pn junction was constructed. The photo-thermal generator MnSi_<1.7>/Mg_2Si was also fabricated.

  • Research Products

    (27 results)

All 2005 2004 2003 Other

All Journal Article (26 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Growth and Morphological Properties of b-FeSi_2 Layers2005

    • Author(s)
      A.Yamamoto, H.Tatsuoka, M.Tanaka, Z.-Q.Liu 他
    • Journal Title

      Appl. Surf. Sci. 244・1/4

      Pages: 326-329

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth and Structural Properties of Mg_2Si and Ca_2Si Bulk Crystals2005

    • Author(s)
      N.Takagi, Y.Sato, T.Matsuyama, Hirokazu Tatsuoka 他
    • Journal Title

      Appl. Surf. Sci. 244・1/4

      Pages: 330-333

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] エコマテリアルとしてのシリサイド半導体2005

    • Author(s)
      立岡浩一, 高木教行, 稲葉崇, 大石琢也, 水由雄介 他
    • Journal Title

      まてりあ ミニ特集「機能性エコ材料の最前線」 44・6

      Pages: 466-470

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] シリサイド半導体薄膜の結晶成長と特性 -熱反応堆積法に始まる新しいシリサイド半導体薄膜の成長-2005

    • Author(s)
      立岡浩一, 大石琢也, 水由雄介, 黒川貴規, 佐竹俊哉 他
    • Journal Title

      機能材料 特集「シリサイド半導体の最新動向」 25・10

      Pages: 15-22

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth and Morphological Properties of b-FeSi_2 Layers2005

    • Author(s)
      A.Yamamoto, H.Tatsuoka, M.Tanaka, Z.-Q Liu, et al.
    • Journal Title

      Appl.Surf.Sci 244(1/4)

      Pages: 326-329

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth and Structural Properties of Mg_2Si and Ca_2Si Bulk Crystals2005

    • Author(s)
      N.Takagi, Y.Sato, T.Matsuyama, Hirokazu Tatsuoka, et al.
    • Journal Title

      Appl.Surf.Sci. 244(1/4)

      Pages: 330-333

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Silicide semiconductors as eco-materials (in Japanese)2005

    • Author(s)
      H.Tatsuoka et al.
    • Journal Title

      Materia 44(6)

      Pages: 466-470

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Crystal growth and characterizations of silicide semiconductors : Growth of new silicide semiconductors grown by reactive deposition epitaxy (in Japanese)2005

    • Author(s)
      H.Tatuoka et al.
    • Journal Title

      Kinozairyo 25(1)

      Pages: 15-22

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Morphological Modification of b-FeSi2 on Si(111) by high temperature growth and post-thermal annealing2004

    • Author(s)
      A.Yamamoto, D.Matsubayashi, S.Makiuchi, H.Tatsuoka 他
    • Journal Title

      Thin Solid Films 461(1)

      Pages: 28-33

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Microstructures of semiconducting silicide layers grown by novel growth techniques2004

    • Author(s)
      H.Tatsuoka, N.Takagi, S.Okaya, Y.Sato, T.Inaba, T.Ohishi 他
    • Journal Title

      Thin Solid Films 461(1)

      Pages: 57-62

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth of b -FeSi2 Layers Deposited from the Molten Salt2004

    • Author(s)
      T.Ohishi, Y.Mizuyoshi, H.Tatsuoka, H.Kuwabara 他
    • Journal Title

      Thin Solid Films 461(1)

      Pages: 63-67

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Structural and Electrical Properties of b-FeSi2 Single Crystals Grown Using Sb Solvent2004

    • Author(s)
      H.Kanno, Y.Saito, T.Takeyama, T.Nakamura, H.Tatsuoka 他
    • Journal Title

      Thin Solid Films 461(1)

      Pages: 110-115

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Morphological Modification of b-FeSi2 on Si(111) by high temparature growth and post-thermal annealing2004

    • Author(s)
      A.Yamamoto, D.Matsubayashi, S.Makiuchi, H.Tatsuoka et al.
    • Journal Title

      Thin Solid Films 461(1)

      Pages: 28-33

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Microstructures of semiconducting silicide layers grown by novel growth techniques2004

    • Author(s)
      H.Tatsuoka, N.Takagi, S.Okaya, Y.Sato, T.Inaba, T.Ohisni, et al.
    • Journal Title

      Thin Solid Films 461(1)

      Pages: 57-62

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth of b-FeSi2 Layers Deposited from the Molten Salt2004

    • Author(s)
      T.Ohishi, T.Mizuyoshi, H.Tatsuoka, H.Kuwabara et al.
    • Journal Title

      Thin Solid Films 461(1)

      Pages: 63-67

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Structural and Electrical Properties of b-FeSi2 Single Crystals Grown Using Sb Solvent2004

    • Author(s)
      H.Kanno, Y.Saito, T.Takeyama, T.Nakamura, H.Tatsuoka, et al.
    • Journal Title

      Thin Solid Films 461(1)

      Pages: 110-115

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Simple Fabrication of Mg2Si thermoelectric generator2003

    • Author(s)
      T.Hosono, Y.Matsuzawa, Y.Momose, H.Tatsuoka 他
    • Journal Title

      Polycrystalline Semiconductors VII in Solid State Phenomena 93

      Pages: 447-453

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth of β-FeSi2 on MnSi1.7 layers by Reactive Deposition Epitaxy2003

    • Author(s)
      M.Kohira, T.Matsuyama, H.Tatsuoka 他
    • Journal Title

      Appl. Surf. Sci. 216・1

      Pages: 614-619

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Formation of CaMgSi at Ca2Si/Mg2Si Interface2003

    • Author(s)
      T.Hosono, Y.Momose, Y.Maeda, H.Tatsuoka 他
    • Journal Title

      Appl. Surf. Sci. 216・1

      Pages: 620-624

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Simple Fabrication of Mg2Si thermoelectric generator2003

    • Author(s)
      T.Hosono, Y.Matsuzawa, Y.Momose, H.Tatsuoka et al.
    • Journal Title

      Polycrystalline Semiconductiros VII in Solid State Phenomana 93

      Pages: 44-453

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth of β-FeSi2 on MnSi1.7 layers by Reactive Deposition Epitaxy2003

    • Author(s)
      M.Kohira, T.Matsuyama, H.Tatsuoka, et al.
    • Journal Title

      Appl.Surf.Sci. 216(1)

      Pages: 614-619

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Formation of CaMgSi at Ca2Si/Mg2Si interface2003

    • Author(s)
      T.Hosono, Y.Momose, Y.Maeda, H.Tatsuoka, et al.
    • Journal Title

      Appl.Surf.Sci. 216(1)

      Pages: 620-624

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth of Mg2Si1-xGex Layers on Silicon-Germanium Substrates

    • Author(s)
      Y.Mizuyoshi, R.Yamada, T.Matsuyama, H.Tatsuoka 他
    • Journal Title

      Thin Solid Films

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth Evolution of Sr-Silicide Layers on Si(111) and Mg2Si/Si(111) Substrates

    • Author(s)
      K.Miura, T.Ohishi, T.Inaba, Y.Mizuyoshi, H.Tatsuoka 他
    • Journal Title

      Thin Solid Films

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Growth of Mg2Si1-xGex Layers on Silicon-Germanium Substrates

    • Author(s)
      Y.Mizuyoshi, R.Yamada, T.Matsuyama, H.Tatsuoka 他
    • Journal Title

      Thin Solid Films (in press)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Growth Evolution of Sr-Silicide Layers on Si(111) and Mg2Si/Si(111) Substrates

    • Author(s)
      K.Miura, T.Ohishi, T.Inaba, Y.Mizuyoshi, H.Tatsuoka, et al.
    • Journal Title

      Thin Solid Films (in press)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Patent(Industrial Property Rights)] マグネシウムシリサイドの合成方法2003

    • Inventor(s)
      立岡 他7名
    • Industrial Property Rights Holder
      静岡大学長
    • Industrial Property Number
      特許公開2005-112653
    • Filing Date
      2003-10-06
    • Description
      「研究成果報告書概要(和文)」より

URL: 

Published: 2007-12-13  

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