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2004 Fiscal Year Final Research Report Summary

Fabrication of highly oriented carbon-nanotube films and its application to an emitter with high efficiency

Research Project

Project/Area Number 15560585
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionShizuoka University

Principal Investigator

MATSUMOTO Koichi  Shizuoka University, Research Institute of Electronics, Associate Professor, 電子工学研究所, 助教授 (10022138)

Co-Investigator(Kenkyū-buntansha) YAMAGUCHI Tomuo  Shizuoka University, Research Institute of Electronics, Professor, 電子工学研究所, 教授 (40010938)
MURAKAMI Kenji  Shizuoka University, Research Institute of Electronics, Associate Professor, 電子工学研究所, 助教授 (30182091)
Project Period (FY) 2003 – 2004
Keywordscarbon nanotube / carbon / nanotube / silicon carbide / SiC / surface / cllipsometry / camphor
Research Abstract

In order to investigate the initial stage of carbon-nanotube(CNT) formation at the surface decomposition of SiC, we heated the SiC single-crystal substrates (6H-type, C-face polished) in vacuum using an infrared mirror furnace and a turbo-molecular pump, and we analyzed the structure change at the surfaces by means of spectro-ellipsometric measurements.
Up to 1100℃, the change in spectra could be interpreted as the decrease of thickness of SiO_2 layer (-4 nm) on the SiC substrate. At 1150℃ and above, however, spectra were distinctly different from those of the samples heated up to 1100℃, and could be interpreted with a three-phase model, in which the surface layer consists of graphite including X% of voids, where the surface layer thickness t=10-50 nm and X=50-70%. This indicates that the surface decomposition of SiC is initiated at this temperature and that the spectro-ellipsometric measurements can detect small changes of optical properties of surface due to the initiation of decomposition.
When the substrates were heated for a longer time (80-640 min) at 1300℃, the spectra were essentially different again, and they could be interpreted with a four-phase model, in which the surface layer consists of two graphite layers including different percentages of voids, where the thickness of surface layers t_1=20-50 nm, t_2=20-60 nm and the percentages of voids X=-90%, Y=-50%. This implied that formation of CNT would start at this temperature. This formation was also detected by FE-SEMI observation.
Furthermore, we tried to fabricate CNT films by means of H-CVD method using camphor, and found out that carbon nanotubes can be grown using ferrocene as a catalyst.

  • Research Products

    (3 results)

All 2004 2003

All Journal Article (3 results)

  • [Journal Article] Spectroscopic ellipsometry of carbon nanotube formation in SiC surface decomposition2004

    • Author(s)
      K.Matsumoto
    • Journal Title

      Thin Solid Films 455-456

      Pages: 339-343

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] SiC表面分解法によるカーボンナノチューブの生成初期過程2003

    • Author(s)
      松本晃一
    • Journal Title

      静岡大学電子工学研究所研究報告 38

      Pages: 81-85

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Initial stage of carbon nanotube formation by SiC surface decomposition2003

    • Author(s)
      K.Matsumoto
    • Journal Title

      Bulletin-Res.Inst.Eiectronics (Shizuoka Univ.) 38

      Pages: 81-85

    • Description
      「研究成果報告書概要(欧文)」より

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Published: 2006-07-11  

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